BSS87 Rev. 1.41 SIPMOS Ò Small-Signal-Transistor Product Summary Feature VDS · N-Channel 240 V 6 W 0.26 A RDS(on) · Enhancement mode, Logic Level ID · dv/dt rated · Pb-free lead plating; RoHS compliant P 1 2 3 2 VPS05558 Type Package Pb-free Tape and Reel Information Marking BSS87 P-SOT89-4-2 Yes L6327: 1000 pcs/reel KA Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current Value Unit A ID TA=25°C 0.26 TA=70°C 0.21 Pulsed drain current ID puls 1.04 dv/dt 6 VGS ±20 TA=25°C Reverse diode dv/dt kV/µs IS=0.26A, V DS=192V, di/dt=200A/µs, Tjmax=150°C Gate source voltage ESD class (JESD22-A114-HBM) V 1A (>250V, <500V) Power dissipation, related to min. footprint Ptot 1 W -55... +150 °C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 55/150/56 Page 1 2010-01-27 BSS87 Rev. 1.41 Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - - 10 @ min. footprint - - 125 @ 6 cm2 cooling area 1) - - 70 Characteristics Thermal resistance, junction - case RthJC K/W (Pin 2) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Values Unit min. typ. max. V(BR)DSS 240 - - VGS(th) 0.8 1.2 1.8 Static Characteristics Drain-source breakdown voltage V V GS=0, ID=250µA Gate threshold voltage, VGS = VDS ID=108µA Zero gate voltage drain current µA IDSS V DS=240V, VGS=0, Tj=25°C - - 0.1 V DS=240V, VGS=0, Tj=150°C - - 100 IGSS - - 10 nA RDS(on) - 4.6 7.5 W RDS(on) - 3.9 6 Gate-source leakage current V GS=20V, VDS=0 Drain-source on-state resistance V GS=4.5V, ID=0.24A Drain-source on-state resistance V GS=10V, ID=0.26A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2010-01-27 BSS87 Rev. 1.41 Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.16 0.33 - S pF Dynamic Characteristics Transconductance g fs V DS³2*I D*RDS(on)max, ID=0.21A Input capacitance Ciss V GS=0, VDS=25V, - 77.5 97 Output capacitance Coss f=1MHz - 11.2 14 Reverse transfer capacitance Crss - 5.8 7.3 Turn-on delay time td(on) V DD=120V, V GS=10V, - 3.7 5.5 Rise time tr ID=0.28A, R G=6W - 3.5 5.2 Turn-off delay time td(off) - 17.6 26.4 Fall time tf - 27.3 41 - 0.14 0.21 - 1.7 2.5 - 3.7 5.5 V(plateau) V DD=192V, ID = 0.26 A - 2.7 - V IS - - 0.26 A - - 1.04 ns Gate Charge Characteristics Gate to source charge Q gs Gate to drain charge Q gd Gate charge total Qg V DD=192V, ID=0.26A V DD=192V, ID=0.26A, nC V GS=0 to 10V Gate plateau voltage Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD V GS=0, IF = I S - 0.82 1.2 V Reverse recovery time trr V R=120V, IF=lS, - 53.6 80.4 ns Reverse recovery charge Qrr diF/dt=100A/µs - 101 152 nC Page 3 2010-01-27 BSS87 Rev. 1.41 1 Power dissipation 2 Drain current Ptot = f (TA) ID = f (TA) parameter: V GS³ 10 V 1.1 BSS87 0.28 A W 0.24 0.9 0.22 0.8 0.2 0.7 0.18 ID Ptot BSS87 0.16 0.6 0.14 0.5 0.12 0.4 0.1 0.3 0.08 0.06 0.2 0.04 0.1 0 0 0.02 20 40 60 80 100 120 °C 0 0 160 20 40 60 80 100 120 °C TA 3 Safe operating area 4 Transient thermal impedance ID = f ( V DS ) ZthJA = f (tp) parameter : D = 0 , TA = 25 °C parameter : D = t p/T 10 1 BSS87 10 3 BSS87 K/W A S( ) on VD S 100 µs ZthJA RD = 10 2 tp = 65.0µs /ID 0 ID 10 160 TA 10 1 1 ms 10 -1 D = 0.50 10 ms 10 0 0.20 0.10 single pulse 0.05 10 -2 0.02 10 -1 0.01 DC 10 -3 0 10 10 1 10 2 V 10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2010-01-27 4 BSS87 Rev. 1.41 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS) RDS(on) = f (ID) parameter: Tj = 25 °C, VGS parameter: Tj = 25 °C, VGS 10 0.52 A 10V 2.3V W 7V 2.9V 0.44 6V 8 5V RDS(on) 0.4 4.5V ID 0.36 4.1V 3.5V 0.32 2.9V 2.3V 0.28 7 3.5V 4.1V 4.5V 5V 6V 7V 10V 6 5 0.24 0.2 4 0.16 3 0.12 2 0.08 1 0.04 0 0 0.5 1 1.5 2 2.5 3 0 0 4 V VDS 0.08 0.16 0.24 0.32 0.4 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); VDS³ 2 x ID x RDS(on)max g fs = f(ID) parameter: Tj = 25 °C parameter: Tj = 25 °C 1 A ID 0.52 A 1 0.6 A S 0.8 g fs ID 0.7 0.6 0.5 0.4 0.3 0.4 0.2 0.3 0.2 0.1 0.1 0 0 0.8 1.6 2.4 3.2 V 4.4 VGS 0 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 ID Page 5 2010-01-27 BSS87 Rev. 1.41 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj) VGS(th) = f (Tj) parameter : ID = 0.26 A, VGS = 10 V parameter: V GS = VDS; ID =108µA 30 BSS87 2 W V 98% VGS(th) RDS(on) 24 22 20 18 16 1.6 1.4 typ. 1.2 14 12 1 10 8 98% 2% 0.8 6 typ 4 0.6 2 0 -60 -20 20 60 100 °C 0.4 -60 180 -20 20 60 100 °C 160 Tj Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD) parameter: V GS=0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 10 1 pF BSS87 A Ciss 10 0 C IF 10 2 Coss 10 1 10 -1 Tj = 25 °C typ Crss Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 6 12 18 24 V 36 VDS 10 -2 0 0.4 0.8 1.2 1.6 2 2.4 V 3 VSD Page 6 2010-01-27 BSS87 Rev. 1.41 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QG ); parameter: VDS , V(BR)DSS = f (Tj) ID = 0.26 A pulsed, Tj = 25 °C 16 BSS87 291 BSS87 V V(BR)DSS V VGS 12 10 276 271 266 261 256 8 0.2 VDS max 251 0.5 VDS max 246 6 0.8 V DS max 241 236 4 231 226 2 221 0 0 1 2 3 4 nC 216 -60 6 QG -20 20 60 100 °C 180 Tj Page 7 2010-01-27 Rev. 1.41 BSS87 Published by Infineon Technologies AG 81726 Munich, Germany © 2010 Infineon Technologies AG All Rights Reserved. Legal Disclaimer The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices, please contact the nearest Infineon Technologies Office (www.infineon.com). Warnings Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact the nearest Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2010-01-27