BSP 316 P Preliminary data SIPMOS Small-Signal-Transistor Feature Product Summary • P-Channel VDS • Enhancement mode R DS(on) • Logic Level ID • dv/dt rated -100 V 1.8 Ω -0.68 A P-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 Type Package BSP 316 P P-SOT223-4-1 Ordering Code Q67042-S4165 Tape and Reel Information Marking - BSP316P Maximum Ratings, at Tj = 25 °C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TA=25°C -0.68 TA=70°C -0.54 ID puls -2.72 dv/dt 6 Gate source voltage VGS ±20 V Power dissipation Ptot 1.8 W -55... +150 55/150/56 °C Pulsed drain current TA=25°C Reverse diode dv/dt kV/µs IS =-0.68A, VDS =-48V, di/dt=-200A/µs, Tjmax=150°C TA=25°C Operating and storage temperature Tj , Tstg IEC climatic category; DIN IEC 68-1 Page 1 2002-07-24 BSP 316 P Preliminary data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. - 15 25 @ min. footprint - 80 115 @ 6 cm 2 cooling area 1) - 48 70 Characteristics Thermal resistance, junction - soldering point RthJS K/W (Pin 4) SMD version, device on PCB: RthJA Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Symbol Parameter Values Unit min. typ. max. -100 - - -1 -1.5 -2 Static Characteristics Drain-source breakdown voltage V(BR)DSS V VGS =0, ID=-250µA Gate threshold voltage, VGS = VDS VGS(th) ID =-170µA Zero gate voltage drain current µA IDSS VDS =-100V, VGS =0, Tj =25°C - -0.1 -0.2 VDS =-100V, VGS =0, Tj =150°C - -10 -100 IGSS - -10 -100 nA RDS(on) - 1.5 2.3 Ω RDS(on) - 1.4 1.8 Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.61A Drain-source on-state resistance VGS =-10V, ID =-0.68A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-24 BSP 316 P Preliminary data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 0.5 1 - S pF Dynamic Characteristics Transconductance gfs |VDS|≥2*|ID |*RDS(on)max , ID =-0.54A Input capacitance Ciss VGS =0, VDS =-25V, - 117 146 Output capacitance Coss f=1MHz - 27.7 34.5 Reverse transfer capacitance Crss - 12 15 Turn-on delay time td(on) VDD =-50V, VGS=-10V, - 4.7 7 Rise time tr ID =-0.68A, RG =6Ω - 7.5 11.2 Turn-off delay time td(off) - 67.4 101 Fall time tf - 25.9 38.9 - -0.2 -0.3 - -1.87 -2.8 - -5.1 -6.4 V(plateau) VDD =-80V, ID =-0.68A - -2.7 - IS - - -0.68 A - - -2.72 ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =-80V, ID =-0.68A VDD =-80V, ID =-0.68A, nC VGS =0 to -10V Gate plateau voltage V Reverse Diode Inverse diode continuous TA=25°C forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr VGS =0, IF =-0.68A - -0.85 -1.2 V VR =-50V, IF =lS , - 44.2 55.3 ns Reverse recovery charge diF /dt=100A/µs - 56.3 70.4 nC Qrr Page 3 2002-07-24 BSP 316 P Preliminary data 1 Power dissipation 2 Drain current Ptot = f (TA ) ID = f (TA ) parameter: |VGS | ≥ 10V 1.9 BSP 316 P BSP 316 P -0.75 A W 1.6 -0.6 -0.55 1.2 ID Ptot 1.4 -0.5 -0.45 -0.4 1 -0.35 0.8 -0.3 -0.25 0.6 -0.2 0.4 -0.15 -0.1 0.2 -0.05 0 0 20 40 60 80 100 °C 120 0 0 160 20 40 60 80 100 120 TA 3 Safe operating area 4 Transient thermal impedance ID = f ( VDS ) ZthJA = f (tp ) parameter : D = 0 , TA = 25°C parameter : D = tp /T -10 160 °C TA 10 2 1 BSP 316 P BSP 316 P K/W A tp = 250.0µs -10 0 Z thJA 10 1 =V DS ID /I D 1 ms 10 0 DS (on ) 10 ms R D = 0.50 0.20 -10 -1 0.10 10 -1 0.05 single pulse 0.02 0.01 DC -10 -2 -10 -1 -10 0 -10 1 -10 2 V -10 3 VDS 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 tp Page 4 2002-07-24 4 BSP 316 P Preliminary data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ) RDS(on) = f (ID ) parameter: Tj =25°C, -VGS parameter: Tj =25°C, -VGS 7 A 10V 5V 4.4V 2 3.6V 3.2V 1.8 2.8V 1.6 2.4V 2.2V 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V Ω RDS(on) -I D 2.4 1.4 5 4 1.2 3 1 0.8 2 0.6 0.4 1 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0 V 5 -VDS 0.4 0.8 1.2 A 1.6 2.4 -ID 7 Typ. transfer characteristics 8 Typ. forward transconductance ID= f ( VGS ); |VDS|≥ 2 x |ID | x RDS(on)max gfs = f(ID) parameter: Tj = 25 °C parameter: Tj =25°C 3.5 1.8 A S g fs -I D 2.5 1.2 2 0.9 1.5 0.6 1 0.3 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 V 4.5 -VGS 0 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2 -ID Page 5 2002-07-24 BSP 316 P Preliminary data 9 Drain-source on-state resistance 10 Typ. gate threshold voltage RDS(on) = f (Tj ) VGS(th) = f (Tj) parameter : ID = -0.68 A, VGS = -10 V parameter: VGS = VDS 5 BSP 316 P 2.4 V Ω 98% 2 VGS(th) RDS(on) 4 3.5 3 1.8 typ. 1.6 1.4 2.5 1.2 98% 2 2% 1 0.8 1.5 typ 0.6 1 0.4 0.5 0.2 0 -60 -20 20 60 100 °C 0 -60 180 -20 20 60 100 Tj °C 160 Tj 11 Typ. capacitances 12 Forward character. of reverse diode C = f (VDS) IF = f (VSD ) parameter: VGS =0, f=1 MHz, Tj = 25 °C parameter: Tj 10 3 -10 1 pF BSP 316 P A Ciss IF -10 0 C 10 2 Coss Crss 10 1 -10 -1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 0 0 4 8 12 16 20 24 28 V 36 -VDS -10 -2 0 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 VSD Page 6 2002-07-24 BSP 316 P Preliminary data 13 Typ. gate charge 14 Drain-source breakdown voltage VGS = f (QGate) V(BR)DSS = f (Tj ) parameter: ID = -0.68 A pulsed, Tj = 25 °C -16 BSP 316 P BSP 316 P -120 V V(BR)DSS V VGS -12 -10 -114 -112 -110 -108 -106 -8 -104 -102 -6 -100 -4 -2 0.2 VDS max -98 0.5 VDS max -96 -94 0.8 VDS max -92 0 0 1 2 3 4 5 6 7 nC 8.5 |Q G| -90 -60 -20 20 60 100 °C 180 Tj Page 7 2002-07-24 Preliminary data BSP 316 P Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-07-24