NPN Silicon AF Transistors BC 846 ... BC 850 Features ● ● ● ● ● For AF input stages and driver applications High current gain Low collector-emitter saturation voltage Low noise between 30 Hz and 15 kHz Complementary types: BC 856, BC 857, BC 859, BC 860 (PNP) Type Marking Ordering Code (tape and reel) BC 846 A BC 846 B BC 847 A BC 847 B BC 847 C BC 848 A BC 848 B BC 848 C BC 849 B BC 849 C BC 850 B BC 850 C 1As 1Bs 1Es 1Fs 1Gs 1Js 1Ks 1Ls 2Bs 2Cs 2Fs 2Gs Q62702-C1772 Q62702-C1746 Q62702-C1884 Q62702-C1687 Q62702-C1715 Q62702-C1741 Q62702-C1704 Q62702-C1506 Q62702-C1727 Q62702-C1713 Q62702-C1885 Q62702-C1712 1)For Pin Configuration 1 2 3 B E C Package1) SOT-23 detailed information see chapter Package Outlines. Semiconductor Group 1 04.96 BC 846 ... BC 850 Maximum Ratings Parameter Symbol Unit BC 846 Values BC 847 BC 850 BC 848 BC 849 Collector-emitter voltage VCE0 65 45 30 V Collector-base voltage VCB0 80 50 30 Collector-emitter voltage VCES 80 50 30 Emitter-base voltage VEB0 6 6 5 Collector current IC 100 Peak collector current ICM 200 Peak base current IBM 200 Peak emitter current IEM 200 Total power dissipation, TS = 71 ˚C Ptot 330 mW Junction temperature Tj 150 ˚C Storage temperature range Tstg mA – 65 … + 150 Thermal Resistance Junction - ambient1) Rth JA ≤ 310 Junction - soldering point Rth JS ≤ 240 1)Package mounted on epoxy pcb 40 mm × 40 mm × 1.5 mm/6 cm2 Cu. Semiconductor Group 2 K/W BC 846 ... BC 850 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. DC characteristics Collector-emitter breakdown voltage IC = 10 mA BC 846 BC 847, BC 850 BC 848, BC 849 V(BR)CE0 Collector-base breakdown voltage IC = 10 µA BC 846 BC 847, BC 850 BC 848, BC 849 V(BR)CB0 Collector-emitter breakdown voltage IC = 10 µA, VBE = 0 BC 846 BC 847, BC 850 BC 848, BC 849 V(BR)CES Emitter-base breakdown voltage IE = 1 µA BC 846, BC 847 BC 848, BC 849, BC 850 V(BR)EB0 Collector cutoff current VCB = 30 V VCB = 30 V, TA = 150 ˚C ICB0 DC current gain IC = 10 µA, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B … BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C IC = 2 mA, VCE = 5 V BC 846 A, BC 847 A, BC 848 A BC 846 B … BC 850 B BC 847 C, BC 848 C, BC 849 C, BC 850 C Collector-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA hFE Base-emitter saturation voltage1) IC = 10 mA, IB = 0.5 mA IC = 100 mA, IB = 5 mA VBEsat Base-emitter voltage IC = 2 mA, VCE = 5 V IC = 10 mA, VCE = 5 V VBE(on) 1)Pulse test: t ≤ 300 µs, D = 2 %. Semiconductor Group 3 V 65 45 30 – – – – – – 80 50 30 – – – – – – 80 50 30 – – – – – – 6 5 – – – – – – – – 15 5 nA µA – – – – 140 250 480 – – – 110 200 420 180 290 520 220 450 800 – – 90 200 250 600 – – 700 900 – – 580 – 660 – 700 770 mV VCEsat BC 846 ... BC 850 Electrical Characteristics at TA = 25 ˚C, unless otherwise specified. Parameter Symbol Values Unit min. typ. max. AC characteristics Transition frequency IC = 20 mA, VCE = 5 V, f = 100 MHz fT – 250 – MHz Output capacitance VCB = 10 V, f = 1 MHz Cobo – 3 – pF Input capacitance VCB = 0.5 V, f = 1 MHz Cibo – 8 – Short-circuit input impedance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A … BC 848 A BC 846 B … BC 850 B BC 847 C … BC 850 C h11e Open-circuit reverse voltage transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A … BC 848 A BC 846 B … BC 850 B BC 847 C … BC 850 C h12e Short-circuit forward current transfer ratio IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A … BC 848 A BC 846 B … BC 850 B BC 847 C … BC 850 C h21e Open-circuit output admittance IC = 2 mA, VCE = 5 V, f = 1 kHz BC 846 A … BC 848 A BC 846 B … BC 850 B BC 847 C … BC 850 C h22e Noise figure IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 30 Hz … 15 kHz BC 849 BC 850 BC 849 f = 1 kHz, ∆ f = 200 Hz BC 850 F Equivalent noise voltage IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ f = 10 Hz … 50 Hz BC 850 Vn Semiconductor Group kΩ – – – – – – 10– 4 – – – 1.5 2.0 3.0 – – – – – – – 200 330 600 – – – µS – – – 4 2.7 4.5 8.7 18 30 60 – – – dB – – – – 1.4 1.4 1.2 1.0 4 3 4 4 – – 0.135 µV BC 846 ... BC 850 Total power dissipation Ptot = f (TA*; TS) * Package mounted on epoxy Collector-base capacitance CCB0 = f (VCB0) Emitter-base capacitance CEB0 = f (VEB0) Permissible pulse load Ptot max/Ptot DC = f (tp) Transition frequency fT = f (IC) VCE = 5 V Semiconductor Group 5 BC 846 ... BC 850 Collector cutoff current ICB0 = f (TA) VCB = 30 V Collector-emitter saturation voltage IC = f (VCEsat), hFE = 20 DC current gain hFE = f (IC) VCE = 5 V Base-emitter saturation voltage IC = f (VBEsat), hFE = 20 Semiconductor Group 6 BC 846 ... BC 850 h parameter he = f (IC) normalized VCE = 5 V h parameter he = f (VCE) normalized IC = 2 mA Noise figure F = f (VCE) IC = 0.2 mA, RS = 2 kΩ, f = 1 kHz Noise figure F = f (f) IC = 0.2 mA, VCE = 5 V, RS = 2 kΩ Semiconductor Group 7 BC 846 ... BC 850 Noise figure F = f (IC) VCE = 5 V, f = 120 Hz Noise figure F = f (IC) VCE = 5 V, f = 1 kHz Noise figure F = f (IC) VCE = 5 V, f = 10 kHz Semiconductor Group 8