JMNIC 2N6386

JMnic
Product Specification
2N6386 2N6387 2N6388
Silicon NPN Power Transistors
DESCRIPTION
・With TO-220C package
・Complement to type 2N6666/6667/6668
・DARLINGTON
・High DC current gain
・Low collector saturation voltage
APPLICATIONS
・Designed for general-purpose amplifier
and low speed switching applications
PINNING
PIN
DESCRIPTION
1
Base
2
Collector;connected to
mounting base
3
Emitter
Absolute maximum ratings(Tc=25℃)
SYMBOL
PARAMETER
CONDITIONS
2N6386
VCBO
VCEO
Collector-base voltage
Collector-emitter voltage
2N6387
Open emitter
Emitter-base voltage
IC
Collector current-DC
ICM
Collector current-Pulse
IB
Base current-DC
PC
Collector power dissipation
Tj
Tstg
60
2N6388
80
2N6386
40
2N6387
UNIT
40
Open base
2N6388
VEBO
VALUE
60
V
V
80
Open collector
5
2N6386
8
2N6387/6388
10
V
A
15
A
0.25
A
65
W
Junction temperature
150
℃
Storage temperature
-65~150
℃
TC=25℃
JMnic
Product Specification
2N6386 2N6387 2N6388
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
2N6386
VCEO(SUS)
Collector-emitter
sustaining voltage
VCEsat-2
VBE-1
VBE-2
Collector-emitter
saturation voltage
Collector-emitter
saturation voltage
Base-emitter
on voltage
Base-emitter
on voltage
IC=0.2A, IB=0
2N6387
Collector
cut-off current
2N6386
IC=3A ,IB=6mA
2N6387/6388
IC=5A ,IB=10mA
2N6386
IC=8A ,IB=80mA
2N6387/6388
IC=10A ,IB=100mA
2N6386
IC=3A ; VCE=3V
2N6387/6388
IC=5A ; VCE=3V
2N6386
IC=8A ; VCE=3V
2N6387/6388
IC=10A ; VCE=3V
Collector
cut-off current
IEBO
Emitter cut-off current
hFE-1
DC current gain
hFE-2
Cob
UNIT
V
60
VCB=40V, VBE=-1.5V
TC=125℃
VCB=60V, VBE=-1.5V
TC=125℃
VCB=80V, VBE=-1.5V
TC=125℃
2N6387
2N6388
ICEO
MAX
80
2N6386
ICBO
TYP.
40
2N6388
VCEsat-1
MIN
2N6386
VCE=40V, IB=0
2N6387
VCE=60V, IB=0
2N6388
VCE=80V, IB=0
VEB=5V; IC=0
2N6386
IC=3A ; VCE=3V
2N6387/6388
IC=5A ; VCE=3V
2N6386
IC=8A ; VCE=3V
2N6387/6388
IC=10A ; VCE=3V
1000
DC current gain
2.0
V
3.0
V
2.8
V
4.5
V
0.3
3.0
0.3
3.0
0.3
3.0
mA
1.0
mA
5.0
mA
20000
100
Output capacitance
IE=0 ; VCB=10V,f=0.1MHz
200
pF
THERMAL CHARACTERISTICS
SYMBOL
Rth j-c
PARAMETER
Thermal resistance junction to case
2
VALUE
UNIT
1.92
℃/W
JMnic
Product Specification
2N6386 2N6387 2N6388
Silicon NPN Power Transistors
PACKAGE OUTLINE
Fig.2 Outline dimensions
3