Product Overview
MJD112: 2.0 A, 100 V NPN Darlington Bipolar Power Transistor
For complete documentation, see the data sheet
Product Description
The Darlington Bipolar Power Transistor is designed for general purpose power and switching such as output or driver stages in
applications such as switching regulators, converters and power amplifiers. The MJD112 (NPN) and MJD117 (PNP) are
complementary devices.
Features
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Lead Formed for Surface Mount Applications in Plastic Sleeves (No Suffix)
Straight Lead Version in Plastic Sleeves ("1" Suffix)
Lead Formed Version in 16 mm Tape and Reel ("T4" Suffix)
Surface Mount Replacements for TIP110-TIP117 Series
Monolithic Construction With Built-in Base-Emitter Shunt Resistors
High DC Current Gain hFE = 2500 (Typ) @ IC = 2.0 Adc
Complementary Pairs Simplifies Designs
NJV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101
Qualified and PPAP Capable
• PbFree Packages are Available
Part Electrical Specifications
Product
Compliance
Status
Polarity
IC
Continuous
(A)
V(BR)CEO Min
(V)
VCE(sat) Max
(V)
hFE Min (k)
hFE Max (k)
fT Min (MHz) Package
Type
MJD112-1G
AEC
Qualified
Active
NPN
2
100
2
1
12
25
IPAK-4
Active
NPN
2
100
2
1
12
25
DPAK-3
Active
NPN
2
100
2
1
12
25
DPAK-3
Active
NPN
2
100
2
1
12
25
DPAK-3
Active
NPN
2
100
2
1
12
25
DPAK-3
Active
NPN
2
100
2
1
12
25
DPAK-3
Pb-free
Halide free
MJD112G
AEC
Qualified
Pb-free
Halide free
MJD112RLG
AEC
Qualified
Pb-free
Halide free
MJD112T4G
Pb-free
Halide free
NJVMJD112G
AEC
Qualified
PPAP
Capable
Pb-free
Halide free
NJVMJD112T4G
AEC
Qualified
PPAP
Capable
Pb-free
Halide free
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016