STMICROELECTRONICS MJD112

MJD112
MJD117
®
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
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■
■
■
■
STMicroelectronics PREFERRED
SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX "T4")
ELECTRICAL SIMILAR TO TIP112 AND
TIP117
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
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DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
3
1
DPAK
TO-252
(Suffix "T4")
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 7KΩ
R2(typ) = 200Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V CBO
Collector-Emitter Voltage (I E = 0)
100
V
V CEO
Collector-Emitter Voltage (I B = 0)
100
V
V EBO
Emitter-Base Voltage (I C = 0)
5
V
Collector Current
2
A
Collector Peak Current (t p < 5 ms)
4
A
IC
I CM
IB
Base Current
P tot
Total Dissipation at T c = 25 o C
T stg
Storage Temperature
Tj
Max. Operating Junction Temperature
0.05
A
20
W
-65 to 150
o
C
150
o
C
For PNP type voltage and current values are negative.
January 2003
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MJD112/MJD117
THERMAL DATA
R thj-case
R thj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
6.25
100
o
C/W
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol
Max.
Unit
I CBO
Collector Cut-off
Current (I E = 0)
Parameter
V CB = 100 V
V CB = 80 V
0.02
0.01
mA
mA
I CEO
Collector Cut-off
Current (I B = 0)
V CE = 50 V
0.02
mA
I CEX
Collector Cut-off
Current (V BE = -1.5V)
V CE = 80 V
V CE = 80 V
0.01
0.5
mA
mA
I EBO
Emitter Cut-off Current
(I C = 0)
V EB = 5 V
2
mA
V CEO(sus) ∗ Collector-Emitter
Sustaining Voltage
(I B = 0)
Test Conditions
Min.
T c = 125 o C
I C = 30 mA
Typ.
100
V
V CE(sat) ∗
Collector-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
I B = 8 mA
I B = 40 mA
2
3
V
V
V BE(sat) ∗
Base-Emitter
Saturation Voltage
IC = 4 A
I B = 40 mA
4
V
V BE(on) ∗
Base-Emitter On
Voltage
IC = 2 A
V CE = 3 V
2.8
V
h FE ∗
DC Current Gain
I C = 0.5 A
IC = 2 A
IC = 4 A
V CE = 3 V
V CE = 3 V
V CE = 3 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
For PNP types voltage and current values are negative.
Safe Operating Areas
2/6
Derating Curve
500
1000
200
12000
MJD112/MJD117
DC Current Gain (NPN type)
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
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MJD112/MJD117
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
4/6
MJD112/MJD117
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
TYP.
inch
MAX.
MIN.
TYP.
MAX.
A
2.20
2.40
0.087
0.094
A1
0.90
1.10
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.90
0.025
0.035
B2
5.20
5.40
0.204
0.213
C
0.45
0.60
0.018
0.024
C2
0.48
0.60
0.019
0.024
D
6.00
6.20
0.236
0.244
E
6.40
6.60
0.252
0.260
G
4.40
4.60
0.173
0.181
H
9.35
10.10
0.368
0.398
L2
0.8
0.031
L4
0.60
1.00
0.024
0.039
V2
0o
8o
0o
0o
P032P_B
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MJD112/MJD117
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of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is
granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specification mentioned in this publication are
subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products
are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics.
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