STMICROELECTRONICS MJD112

MJD112
MJD117
COMPLEMENTARY SILICON POWER
DARLINGTON TRANSISTORS
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SGS-THOMSON PREFERRED SALESTYPES
LOW BASE-DRIVE REQUIREMENTS
INTEGRATED ANTIPARALLEL
COLLECTOR-EMITTER DIODE
SURFACE-MOUNTING TO-252 (DPAK)
POWER PACKAGE IN TAPE & REEL
(SUFFIX ”T4”)
ELECTRICAL SIMILAR TO TIP112 AND
TIP117
APPLICATIONS
GENERAL PURPOSE SWITCHING AND
AMPLIFIER
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3
1
DPAK
TO-252
(Suffix ”T4”)
DESCRIPTION
The MJD112 and MJD117 form complementary
PNP - NPN pairs.
They are manufactured using Epitaxial Base
technology for cost-effective performance.
INTERNAL SCHEMATIC DIAGRAM
R1(typ) = 7KΩ
R2(typ) = 200Ω
ABSOLUTE MAXIMUM RATINGS
Symbol
Value
Unit
VCBO
Collector-Emitter Voltage (IE = 0)
Parameter
100
V
VCEO
Collector-Emitter Voltage (IB = 0)
100
V
VEBO
Emitter-Base Voltage (I C = 0)
5
V
IC
Collector Current
2
A
ICM
Collector Peak Current (t p < 5 ms)
4
A
IB
Base Current
Pt ot
Tot al Dissipation at T c = 25 o C
T stg
Storage Temperature
Tj
Max. Ope rating Junction Temperature
0.05
A
20
W
-65 to 150
o
C
150
o
C
For PNP type voltage and current values are negative.
September 1997
1/6
MJD112/MJD117
THERMAL DATA
R thj-ca se
Rt hj-amb
Thermal Resistance Junction-case
Thermal Resistance Junction-ambient
Max
Max
o
6.25
100
o
C/W
C/W
o
ELECTRICAL CHARACTERISTICS (Tcase = 25 C unless otherwise specified)
Symbol
Max.
Unit
ICBO
Collecto r Cut-of f
Current (I E = 0)
Parameter
VCB = 100 V
VCB = 80 V
Test Conditions
Min.
Typ.
0.02
0.01
mA
mA
ICEO
Collecto r Cut-of f
Current (I B = 0)
VCE = 50 V
0.02
mA
ICEX
Collecto r Cut-of f
Current
VCB = 80 V VBE = -1.5V
VCB = 80 V VBE = -1.5V T c = 125 o C
0.01
0. 5
mA
mA
I EBO
Emitter Cut-off Current VEB = 5 V
(I C = 0)
2
mA
VCEO(sus)
Collecto r-Emitter
Sustaining Voltage
I C = 30 mA
V CE(sat )∗
Collecto r-Emitter
Saturation Voltage
IC = 2 A
IC = 4 A
IB = 8 mA
IB = 40 mA
2
3
V
V
VBE( sat) ∗
Collecto r-Base
Saturation Voltage
IC = 4 A
IB = 40 mA
4
V
V BE(on) ∗
Base-Emitter Volta ge
IC = 2 A
VCE = 3 V
2. 8
V
hFE ∗
DC Current Gain
I C = 0.5 A
IC = 2 A
IC = 4 A
100
VCE = 3 V
VCE = 3 V
VCE = 3 V
∗ Pulsed: Pulse duration = 300 µs, duty cycle ≤ 2 %
Safe Operating Areas
2/6
Derating Curve
500
100 0
200
V
120 00
MJD112/MJD117
DC Current Gain (NPN type)
DC Current Gain (NPN type)
Collector-Emitter Saturation Voltage (NPN type)
Collector-Emitter Saturation Voltage (PNP type)
Base-Emitter Saturation Voltage (NPN type)
Base-Emitter Saturation Voltage (PNP type)
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MJD112/MJD117
Base-Emitter On Voltage (NPN type)
Base-Emitter On Voltage (PNP type)
Freewheel Diode Forward Voltage (NPN types)
Freewheel Diode Forward Voltage (PNP types)
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MJD112/MJD117
TO-252 (DPAK) MECHANICAL DATA
mm
DIM.
MIN.
inch
TYP.
MAX.
MIN.
TYP.
MAX.
A
2.2
2.4
0.086
0.094
A1
0.9
1.1
0.035
0.043
A2
0.03
0.23
0.001
0.009
B
0.64
0.9
0.025
0.035
B2
5.2
5.4
0.204
0.212
C
0.45
0.6
0.017
0.023
C2
0.48
0.6
0.019
0.023
D
6
6.2
0.236
0.244
E
6.4
6.6
0.252
0.260
G
4.4
4.6
0.173
0.181
H
9.35
10.1
0.368
0.397
L2
0.8
L4
0.031
0.6
1
0.023
0.039
A1
C2
A
H
A2
C
DETAIL ”A”
L2
D
=
1
=
G
2
=
=
=
E
=
B2
3
B
DETAIL ”A”
L4
0068772-B
5/6
MJD112/MJD117
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all informationpreviously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
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