SPP02N60C3 SPB02N60C3 Final data Cool MOS™ Power Transistor Feature VDS @ Tjmax 650 V RDS(on) 3 Ω ID 1.8 A • New revolutionary high voltage technology • Ultra low gate charge P-TO263-3-2 • Periodic avalanche rated P-TO220-3-1 • Extreme dv/dt rated • Ultra low effective capacitances Type Package Ordering Code Marking SPP02N60C3 P-TO220-3-1 Q67040-S4392 02N60C3 SPB02N60C3 P-TO263-3-2 Q67040-S4393 02N60C3 Maximum Ratings Parameter Symbol Continuous drain current ID Value A TC = 25 °C 1.8 TC = 100 °C 1.1 Pulsed drain current, tp limited by Tjmax I D puls 5.4 Avalanche energy, single pulse EAS 50 I D = 1.35 A, VDD = 50 V Avalanche energy, repetitive tAR limited by Tjmax1) EAR Unit mJ 0.07 I D = 1.8 A, VDD = 50 V Avalanche current, repetitive tAR limited by Tjmax I AR Gate source voltage static VGS 1.8 A ±20 V Gate source voltage AC (f >1Hz) VGS ±30 Power dissipation, TC = 25°C Ptot 25 W Operating and storage temperature T j , T stg -55... +150 °C Page 1 2003-10-02 SPP02N60C3 SPB02N60C3 Final data Maximum Ratings Parameter Symbol Drain Source voltage slope dv/dt Value Unit 50 V/ns Values Unit V DS = 480 V, I D = 1.8 A, Tj = 125 °C Thermal Characteristics Parameter Symbol min. typ. max. Thermal resistance, junction - case RthJC - - 5 Thermal resistance, junction - ambient, leaded RthJA - - 62 SMD version, device on PCB: RthJA @ min. footprint - - 62 @ 6 cm 2 cooling area 2) - 35 - - - 260 Soldering temperature, Tsold K/W °C 1.6 mm (0.063 in.) from case for 10s 3) Electrical Characteristics, at Tj=25°C unless otherwise specified Parameter Symbol Conditions Drain-source breakdown voltage V(BR)DSS V GS=0V, ID=0.25mA Drain-Source avalanche V(BR)DS V GS=0V, ID=0.25A Values Unit min. typ. max. 600 - - - 700 - 2.1 3 3.9 V breakdown voltage Gate threshold voltage VGS(th) ID=80µΑ, VGS=V DS Zero gate voltage drain current I DSS V DS=600V, VGS=0V, Gate-source leakage current I GSS Drain-source on-state resistance RDS(on) Gate input resistance RG µA Tj=25°C, - 0.5 1 Tj=150°C - - 50 V GS=30V, VDS=0V - - 100 Ω V GS=10V, ID=1.1A, Tj=25°C - 2.7 3 Tj=150°C - 7.3 - f=1MHz, open Drain - 9 - Page 2 nA 2003-10-02 SPP02N60C3 SPB02N60C3 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Transconductance Symbol g fs Conditions V DS≥2*I D*RDS(on)max, Values Unit min. typ. max. - 1.75 - S pF ID=1.1A Input capacitance Ciss V GS=0V, V DS=25V, - 200 - Output capacitance Coss f=1MHz - 90 - Reverse transfer capacitance Crss - 4 - - 8.1 - - 15.7 - Effective output capacitance, 4) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 5) Co(tr) pF time related Turn-on delay time td(on) V DD=350V, V GS=0/10V, - 6 - Rise time tr ID=1.8A, RG=50Ω - 3 - Turn-off delay time td(off) - 68 70 Fall time tf - 12 30 - 1.6 - - 3.8 - - 9.5 12.5 - 5.5 - ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg V DD=420V, ID=1.8A V DD=420V, ID=1.8A, nC V GS=0 to 10V Gate plateau voltage V(plateau) V DD=420V, ID=1.8A V 1Repetitve avalanche causes additional power losses that can be calculated as P =EAR*f. AV 2Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. 3Soldering temperature for TO-263: 220°C, reflow 4C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V DSS. 5C o(tr) is a fixed capacitance that gives the same charging time as Coss while V DS is rising from 0 to 80% V DSS. Page 3 2003-10-02 SPP02N60C3 SPB02N60C3 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Inverse diode continuous IS Conditions TC=25°C Values Unit min. typ. max. - - 1.8 - - 5.4 A forward current Inverse diode direct current, I SM pulsed Inverse diode forward voltage VSD VGS =0V, I F=IS - 1 1.2 V Reverse recovery time t rr VR =420V, IF=IS , - 200 350 ns Reverse recovery charge Q rr diF/dt=100A/µs - 1.3 - µC Peak reverse recovery current I rrm - 9 - A Peak rate of fall of reverse di rr/dt - - 200 A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.1 Rth2 K/W Cth1 0.00002806 0.184 Cth2 0.0001113 Rth3 0.306 Cth3 0.0001679 Rth4 1.207 Cth4 0.000547 Rth5 0.974 Cth5 0.001388 Rth6 0.251 Cth6 0.035 Tj R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2003-10-02 SPP02N60C3 SPB02N60C3 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC) ID = f ( V DS ) parameter : D = 0 , T C=25°C 28 10 1 SPP02N60C3 W A 24 22 10 0 18 ID Ptot 20 16 14 12 10 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ,ms DC 10 -1 8 6 4 2 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (t p) ID = f (VDS); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 5.5 V20 V10 V7 V6.5 A K/W 4.5 10 0 ID ZthJC 4 10 -2 3.5 3 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -1 V6 V5.5 2.5 2 V5 1.5 1 V4.5 0.5 10 -3 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 Page 5 0 0 V4 2 4 6 8 10 12 14 16 V 20 VDS 2003-10-02 3 SPP02N60C3 SPB02N60C3 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS); Tj=150°C RDS(on)=f(ID) parameter: tp = 10 µs, VGS parameter: Tj=150°C, V GS 3 20 A 20V 8V 7V 6.5V 6V ID 2.1 1.8 4V 4.5V 5V 5,5V 16 RDS(on) 2.4 Ω 5.5V 14 12 1.5 6V 10 1.2 5V 8 0.9 4.5V 0.6 6 4V 0.3 0 0 5 10 4 V 15 6.5V 7V 8V 20V 2 0 25 0.3 0.6 0.9 1.2 1.5 1.8 2.1 2.4 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj) ID= f ( VGS ); V DS≥ 2 x ID x RDS(on)max parameter : ID = 1.1 A, VGS = 10 V parameter: tp = 10 µs 17 SPP02N60C3 3 5.5 Ω A 25°C 4.5 4 12 ID RDS(on) 14 3.5 10 150°C 3 8 2.5 6 2 1.5 98% 4 1 typ 2 0 -60 0.5 -20 20 60 100 °C 180 Tj Page 6 0 0 2 4 6 8 10 12 14 16 V 20 VGS 2003-10-02 SPP02N60C3 SPB02N60C3 Final data 9 Typ. gate charge 10 Forward characteristics of body diode VGS = f (QGate ) IF = f (VSD) parameter: ID = 1.8 A pulsed parameter: Tj , tp = 10 µs 16 10 1 SPP02N60C3 V SPP02N60C3 A 10 0 0.2 VDS max 10 IF VGS 12 0.8 VDS max 8 6 10 -1 Tj = 25 °C typ 4 Tj = 150 °C typ Tj = 25 °C (98%) 2 0 0 Tj = 150 °C (98%) 2 4 6 8 10 12 nC 10 -2 0 15 0.4 0.8 1.2 1.6 2 2.4 V QGate 3 VSD 11 Typ. drain current slope 12 Typ. switching time di/dt = f(R G), inductive load, Tj = 125°C t = f (RG ), inductive load, T j=125°C par.: VDS =380V, VGS=0/+13V, ID=1.8A par.: V DS=380V, VGS=0/+13V, ID=1.8 A 1000 400 ns A/µs di/dt(on) 600 t di/dt 300 td(off) 250 200 400 150 100 tf td(on) tr 200 50 di/dt(off) 0 0 40 80 120 160 200 Ω 280 RG Page 7 0 0 40 80 120 160 200 Ω 260 RG 2003-10-02 SPP02N60C3 SPB02N60C3 Final data 13 Typ. switching time 14 Typ. drain source voltage slope t = f (ID), inductive load, T j=125°C dv/dt = f(RG), inductive load, Tj = 125°C par.: VDS =380V, VGS=0/+13V, RG =50Ω par.: V DS=380V, VGS=0/+13V, ID=1.8A 85000 90 ns tdoff V/ns 70 t dv/dt 60 50 45000 40 dv/dt(on) 30 10 25000 tf 20 tdon tr dv/dt(off) 0 0.25 0.5 0.75 1 1.25 1.5 A 5000 0 2 40 80 120 160 200 ID Ω 280 RG 15 Typ. switching losses 16 Typ. switching losses E = f (ID), inductive load, Tj=125°C E = f(RG), inductive load, Tj=125°C par.: VDS =380V, VGS=0/+13V, RG =50Ω par.: V DS=380V, VGS=0/+13V, ID=1.8A 0.01 0.0425 mWs mWs 0.0325 0.007 0.0275 E E 0.008 Eon Eon 0.006 0.0225 0.005 0.0175 0.004 0.0125 Eoff Eoff 0.003 0.002 0.25 0.0075 0.5 0.75 1 1.25 1.5 A 0.0025 0 2 ID 40 80 120 160 200 Ω 280 RG Page 8 2003-10-02 SPP02N60C3 SPB02N60C3 Final data 17 Avalanche SOA 18 Avalanche energy IAR = f (tAR) EAS = f (Tj) par.: Tj ≤ 150 °C par.: ID = 1.35 A, VDD = 50 V 2 50 A mJ 1.6 Tj(START) =25°C EAS IAR 1.4 1.2 30 1 0.8 20 Tj(START) =125°C 0.6 0.4 10 0.2 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 µs 10 tAR 0 20 4 40 60 80 100 120 °C 160 Tj 19 Drain-source breakdown voltage 20 Avalanche power losses V(BR)DSS = f (Tj) PAR = f (f ) parameter: E AR=0.07mJ 720 SPP02N60C3 70 W 680 50 PAR V(BR)DSS V 660 40 640 620 30 600 20 580 10 560 540 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 Hz 10 f Page 9 2003-10-02 6 SPP02N60C3 SPB02N60C3 Final data 21 Typ. capacitances 22 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS) parameter: V GS=0V, f=1 MHz 10 4 1.8 pF µJ 1.4 Eoss 10 3 C Ciss 1.2 1 10 2 0.8 0.6 Coss 10 1 0.4 Crss 10 0 0 100 0.2 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 10 2003-10-02 SPP02N60C3 SPB02N60C3 Final data P-TO-220-3-1 B 4.44 0.05 9.98 ±0.48 2.8 ±0.2 1.27±0.13 13.5 ±0.5 C A 5.23 ±0.9 15.38 ±0.6 10 ±0.4 3.7 ±0.2 0.5 ±0.1 3x 0.75 ±0.1 2.51±0.2 1.17 ±0.22 2x 2.54 0.25 M A B C All metal surfaces tin plated, except area of cut. Metal surface min. x=7.25, y=12.3 P-TO-263-3-2 (D 2-PAK) Page 11 2003-10-02 Final data SPP02N60C3 SPB02N60C3 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 12 2003-10-02