SPW11N60C2 Final data Cool MOS™ Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS 600 V • Periodic avalanche rated RDS(on) 0.38 Ω • Extreme dv/dt rated ID 11 A • Ultra low effective capacitances P-TO247 • Improved noise immunity Type Package Ordering Code Marking SPW11N60C2 P-TO247 Q67040-S4313 11N60C2 Maximum Ratings, at TC = 25°C, unless otherwise specified Parameter Symbol Continuous drain current ID Value Unit A TC = 25 °C 11 TC = 100 °C 7 Pulsed drain current, tp limited by Tjmax ID puls 22 Avalanche energy, single pulse EAS 340 EAR 0.6 Avalanche current, repetitive tAR limited by Tjmax IAR 11 A Reverse diode dv/dt dv/dt 6 V/ns Gate source voltage VGS ±20 V Power dissipation, TC = 25°C Ptot 125 W Operating and storage temperature Tj , Tstg -55... +150 °C mJ ID =5.5A, VDD =50V Avalanche energy, repetitive tAR limited by Tjmax 1) ID =11A, VDD =50V IS =11A, VDS < VDD, di/dt=100A/µs, Tjmax =150°C Page 1 2002-10-07 SPW11N60C2 Final data Thermal Characteristics Parameter Symbol Values Unit min. typ. max. Characteristics Thermal resistance, junction - case RthJC - - 1 Thermal resistance, junction - ambient, leaded RthJA - - 62 - - 1 - - 260 °C V Linear derating factor Soldering temperature, Tsold K/W W/K 1.6 mm (0.063 in.) from case for 10s Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Static Characteristics Drain-source breakdown voltage V(BR)DSS 600 - - V(BR)DS - 700 - VGS(th) 3.5 4.5 5.5 VGS =0V, ID =0.25mA Drain-source avalanche breakdown voltage VGS =0V, ID =11A Gate threshold voltage, VGS = VDS ID =0.5mA Zero gate voltage drain current µA IDSS VDS = 600 V, VGS = 0 V, Tj = 25 °C - - 25 VDS = 600 V, VGS = 0 V, Tj = 150 °C - - 250 IGSS - - 100 nA RDS(on) - 0.34 0.38 Ω RG - 0.86 - Gate-source leakage current VGS =20V, VDS=0V Drain-source on-state resistance VGS =10V, ID=7A, Tj=25°C Gate input resistance f = 1 MHz, open drain 1Repetitve avalanche causes additional power losses that can be calculated as P =E *f. AV AR Page 2 2002-10-07 SPW11N60C2 Final data Electrical Characteristics , at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. 3 6 - S pF Characteristics Transconductance g fs V DS≥2*I D*R DS(on)max, ID=7A Input capacitance Ciss V GS=0V, V DS=25V, - 1460 - Output capacitance Coss f=1MHz - 610 - Reverse transfer capacitance Crss - 21 - - 45 - - 85 - Effective output capacitance, 1) Co(er) V GS=0V, energy related V DS=0V to 480V Effective output capacitance, 2) Co(tr) time related Turn-on delay time t d(on) V DD=380V, V GS=0/13V, - 13 - Rise time tr ID=11A, R G=6.8Ω, - 40 - Turn-off delay time t d(off) Tj=125°C - 48 72 Fall time tf - 9 13.5 - 10.5 - - 24 - - 41.5 54 - 8 - pF ns Gate Charge Characteristics Gate to source charge Qgs Gate to drain charge Qgd Gate charge total Qg VDD =350V, ID =11A VDD =350V, ID =11A, nC VGS =0 to 10V Gate plateau voltage V(plateau) VDD =350V, ID =11A V 1C o(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% VDSS . 2Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS . Page 3 2002-10-07 SPW11N60C2 Final data Electrical Characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions Values Unit min. typ. max. - - 11 - - 22 Characteristics Inverse diode continuous IS TC=25°C A forward current Inverse diode direct current, ISM pulsed Inverse diode forward voltage VSD V GS=0V, I F=IS - 1 1.2 V Reverse recovery time trr V R=350V, I F=I S , - 650 1105 ns Reverse recovery charge Qrr diF/dt=100A/µs - 7.9 - µC Peak reverse recovery current Irrm - 30 - A Peak rate of fall of reverse dirr /dt - 600 - A/µs recovery current Typical Transient Thermal Characteristics Symbol Value Unit Symbol Value typ. Unit typ. Thermal resistance Thermal capacitance Rth1 0.015 Rth2 Cth1 0.0002121 0.034 Cth2 0.0007091 Rth3 0.042 Cth3 0.001184 Rth4 0.116 Cth4 0.001527 Rth5 0.149 Cth5 0.011 Rth6 0.059 Cth6 0.089 Tj K/W R th1 R th,n T case Ws/K E xternal H eatsink P tot (t) C th1 C th2 C th,n T am b Page 4 2002-10-07 SPW11N60C2 Final data 1 Power dissipation 2 Safe operating area Ptot = f (TC ) ID = f ( VDS ) parameter : D = 0 , TC =25°C 10 2 SPW11N60C2 140 W A 120 110 10 1 90 ID Ptot 100 80 10 0 70 60 50 40 10 -1 30 20 tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms DC 10 0 0 20 40 60 80 100 120 °C 10 -2 0 10 160 10 1 10 2 10 V VDS TC 3 Transient thermal impedance 4 Typ. output characteristic ZthJC = f (tp ) ID = f (VDS ); Tj=25°C parameter: D = tp/T parameter: tp = 10 µs, VGS 10 1 35 K/W 20V A 12V 10 0 ID ZthJC 10V 25 10 -1 20 9V D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse 10 -2 10 -3 15 8V 10 7V 5 6V 10 -4 -7 10 10 -6 10 -5 10 -4 10 -3 s tp 10 -1 0 0 5 10 15 25 V VDS Page 5 2002-10-07 3 SPW11N60C2 Final data 5 Typ. output characteristic 6 Typ. drain-source on resistance ID = f (VDS ); Tj=150°C RDS(on) =f(ID ) parameter: tp = 10 µs, VGS parameter: Tj =150°C, VGS 2 18 20V 12V 10V A 9V RDS(on) 14 ID 8V 12 Ω 10 20V 12V 10V 9V 8V 7V 6V 1 8 7V 6 0.5 4 6V 2 0 0 5 10 15 0 0 25 V 2 4 6 8 10 12 14 VDS A ID 7 Drain-source on-state resistance 8 Typ. transfer characteristics RDS(on) = f (Tj ) ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max parameter: tp = 10 µs parameter : ID = 7 A, VGS = 10 V 2.1 SPW11N60C2 18 32 Ω A 1.6 24 1.4 ID RDS(on) 1.8 20 1.2 25 °C 150 °C 16 1 0.8 12 0.6 8 98% 0.4 typ 4 0.2 0 -60 -20 20 60 100 °C 180 0 0 4 8 12 20 V VGS Tj Page 6 2002-10-07 SPW11N60C2 Final data 9 Forward characteristics of body diode 10 Typ. switching time IF = f (VSD ) t = f (RG ), inductive load, Tj =125°C parameter: Tj , tp = 10 µs par.: VDS =380V, VGS=0/+13V, ID=11 A 10 2 10 3 SPW11N60C2 ns A td(off) td(on) 10 2 t IF 10 1 tr tf 10 0 10 1 Tj = 25 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 150 °C (98%) 10 -1 0 0.4 0.8 1.2 1.6 2 2.4 V 10 0 0 3 10 20 30 40 Ω 50 70 RG VSD 11 Typ. switching losses 12 Typ. switching losses E = f (ID ), inductive load, Tj=125°C E = f(RG ), inductive load, Tj =125°C par.: VDS =380V, VGS=0/+13V, RG =6.8Ω par.: VDS =380V, VGS=0/+13V,ID =11A 0.7 mWs 0.4 *) E on includes SDP06S60 diode commutation losses. *) Eon includes SDP06S60 diode commutation losses. mWs E E 0.5 0.4 Eoff 0.2 Eon* 0.3 Eoff 0.2 0.1 Eon* 0.1 0 0 5 10 15 25 A ID 0 0 10 20 30 40 50 Ω 70 RG Page 7 2002-10-07 SPW11N60C2 Final data 13 Avalanche SOA 14 Avalanche energy IAR = f (tAR ) EAS = f (Tj ) par.: Tj ≤ 150 °C par.: ID = 5.5 A, VDD = 50 V 350 11 A mJ 9 250 EAS IAR 8 7 200 6 5 T j(START) =25°C 150 4 3 100 T j(START) =125°C 2 50 1 0 -3 10 10 -2 10 -1 10 0 10 1 10 2 0 20 4 µs 10 tAR 40 60 80 100 120 °C 160 Tj 15 Drain-source breakdown voltage 16 Avalanche power losses V(BR)DSS = f (Tj ) PAR = f (f ) parameter: EAR =0.6mJ SPW11N60C2 300 720 V 680 P AR V (BR)DSS W 660 200 640 150 620 100 600 580 50 560 540 -60 -20 20 60 100 °C 180 Tj 0 4 10 10 5 10 Hz f Page 8 2002-10-07 6 SPW11N60C2 Final data 17 Typ. capacitances 18 Typ. Coss stored energy C = f (VDS) Eoss=f(VDS ) parameter: VGS =0V, f=1 MHz 10 4 7.5 µJ pF Ciss 6 10 3 C E oss 5.5 5 4.5 4 10 2 Coss 3.5 3 2.5 10 1 2 Crss 1.5 1 0.5 10 0 0 100 200 300 400 V 600 VDS 0 0 100 200 300 400 V 600 VDS Definition of diodes switching characteristics Page 9 2002-10-07 SPW11N60C2 Final data P-TO-247-3-1 15.9 5.03 20˚ 5˚ D 5.94 4.37 2.03 6.17 20.9 9.91 6.35 ø3.61 7 1.75 41.22 2.97 x 0.127 16 D 1.14 0.243 1.2 0.762 MAX. 2 2.4 +0.05 2.92 5.46 General tolerance unless otherwise specified: Leadframe parts: ±0.05 Package parts: ±0.12 Page 10 2002-10-07 Final data SPW11N60C2 Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 München © Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 11 2002-10-07