BAR 81 Silicon RF Switching Diode Preliminary data • Design for use in shunt configuration • High shunt signal isolation • Low shunt insertion loss Type Marking Ordering Code Pin Configuration BAR 81 BBs 1=C Q62702Q62702-A1145 2=A 3=C Package 4=A MW-4 Maximum Ratings Parameter Symbol Values Unit Diode reverse voltage VR 30 V Forward current IF 100 mA Operating temperature range Top - 55 ... + 125 Storage temperature Tstg - 55 ... + 150 Semiconductor Group 1 °C Feb-26-1996 BAR 81 Electrical Characteristics at TA=25°C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. DC characteristics Reverse current IR VR = 20 V, TA = 25 °C Forward voltage nA - - 20 VF IF = 100 mA V - 0.93 1 AC characteristics Diode capacitance CT pF VR = 1 V, f = 1 MHz - 0.6 - VR = 3 V, f = 1 MHz - 0.57 - Forward resistance Ω rf IF = 5 mA, f = 100 MHz Series inductance chip to ground Ls Semiconductor Group 2 - 0.7 - - 0.15 - nH Feb-26-1996 BAR 81 Configuration of the shunt-diode - A perfect ground is essential for optimum isolation - The anode pins should be used as passage for RF Package Semiconductor Group 3 Feb-26-1996