BAR 80 Silicon RF Switching Diode l l l Design for use in shunt configuration Hight shunt signal isolation Low shunt insertion loss Type BAR 80 Marking AAs Ordering code (tape and reel) Package Pin configuration 1 2 3 Q62702-A1084 C A 1) 4 C A MW-4 Maximum ratings Parameter Symbol Reverse voltage VR IF Top Tstg Forward current Operating temperature range Storage temperature range BAR 80 Unit 35 V 100 mA -55...+125 °C -55...+150 °C 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group 1 Edition A02, 27.02.95 BAR 80 Electrical characteristics at TA = 25 °C, unless otherwise specified. Parameter Reverse current VR = 20 V Forward voltage IF = 100 mA Diode capacitance VR = 1 V,f = 1 MHz VR = 3 V,f = 1 MHz Forward resistance Symbol Value Unit min. typ. max. - - 20 - 0.92 1 IR nA VF V CT pF 0.6 1 0.92 1.6 1.3 Ω rf f = 100MHz IF = 5 mA - 0.5 0.7 Ls Series inductance to ground nH - 0.14 - Application information - Shunt signal isolation IF = 10 mA, f = 2 GHz, RG = RL = 50 Ω dB - 23 - IL Shunt insertion loss VR = 5 V, f = 2 GHz, RG = RL = 50 Ω dB - 0.15 - Configuration of the shunt-diode -A perfect ground is essential for optimum isolation -The anode pins should be used as passage for RF Semiconductor Group 2 Edition A02, 27.02.95 BAR 80 Forward current IF = f (TS,TA) Forward resistance rf = (IF) f = 100 MHz mA I TS F TA TS TA Dioden capacitance CT = f (VR) f = 1 MHz Semiconductor Group 3 Edition A02, 27.02.95 BAR 80 Permissible pulse load RthJS = f (tp) Permissible pulse load IFmax / IFDC = f (tp) K/W I F max _______ IF DC R thJS t tp Semiconductor Group 4 p Edition A02, 27.02.95