INFINEON IL420

IL420
600 V TRIAC DRIVER OPTOCOUPLER
FEATURES
• High Input Sensitivity IFT=2 mA
• Blocking Voltage, 600 V
• 300 mA On-State Current
• High Static dv/dt 10,000 V/µs
• Inverse Parallel SCRs Provide Commutating
dv/dt >2K V/µs
• Very Low Leakage <10 µA
• Isolation Test Voltage from Double Molded
Package 5300 VACRMS
• Small 6-Pin DIP Package
• Underwriters Lab File #E52744
• VDE 0884 Available with Option 1
Maximum Ratings
Emitter
Reverse Voltage ................................................ 6 V
Forward Current ........................................... 60 mA
Surge Current ..................................................2.5 A
Power Dissipation.......................................100 mW
Derate from 25°C ................................1.33 mW/°C
Thermal Resistance..................................750 °C/W
Dimensions in inches (mm)
Pin One ID
3
2
1
4
5
6
.248 (6.30)
.256 (6.50)
6 Triac
MT2
Substrate
5 do not
connect
NC 3
4 Triac
MT1
*Zero Crossing Circuit
LED 1
Anode
LED
Cathode 2
.335 (8.50)
.343 (8.70)
.039
(1.00)
Min.
4°
typ.
.018 (0.45)
.022 (0.55)
.300 (7.62)
typ.
.130 (3.30)
.150 (3.81)
18° typ.
.020 (.051) min.
.031 (0.80)
.035 (0.90)
.100 (2.54) typ.
.010 (.25)
.014 (.35)
.110 (2.79)
.150 (3.81)
.300 (7.62)
.347 (8.82)
DESCRIPTION
Detector
Peak Off-State Voltage ...................................600 V
Peak Reverse Voltage ....................................600 V
RMS On-State Current.................................300 mA
Single Cycle Surge............................................ 3 A
Total Power Dissipation ..............................500 mW
Derate from 25°C ..................................6.6 mW/°C
Thermal Resistance...................................150°C/W
The IL420 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two
inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin 0.3 inch dual in-line package, using high
insulation double molded, over/under leadframe construction.
Package
Storage Temperature................... –55°C to +150°C
Operating Temperature ............... –55°C to +100°C
Lead Soldering Temperature.............. 260°C/5 sec.
Isolation Test Voltage......................... 5300 VACRMS
The IL420 uses two discrete SCRs resulting in a commutating dV/dt of
greater than 10KV/ms. The use of a proprietary dv/dt clamp results in a
static dV/dt of greater than 10KV/ms. This clamp circuit has a MOSFET
that is enhanced when high dV/dt spikes occur between MT1 and MT2
of the TRIAC. When conducting, the FET clamps the base of the phototransistor, disabling the first stage SCR predriver.
High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger
current of less than 2 mA (DC).
The 600 V blocking voltage permits control of off-line voltages up to 240
VAC, with a safety factor of more than two, and is sufficient for as much
as 380 VAC.
The IL420 isolates low-voltage logic from 120, 240, and 380 VAC lines to
control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays.
Applications include solid-state relays, industrial controls, office equipment, and consumer appliances.
5–1
Characteristics
Symbol
Min
Typ
Max
Unit
Condition
Emitter
Forward Voltage
VF
1.16
1.35
V
IF=10 mA
Reverse Current
IR
0.1
10
µA
VR=6 V
Capacitance
CO
40
pF
VF=0 V, f=1 MHz
Thermal Resistance, Junction to Lead
RTHJL
750
°C/W
Output Detector
Off-State Voltage
VD (RMS)
424
460
V
ID(RMS)=70 µA
Reverse Voltage
VR
424
460
V
IR(RMS)=70 µA
Off-State Current
ID (RMS)
10
100
µA
VD=600 V, TA=100°C
Reverse Current
IR (RMS)
10
100
µA
VR=600 V, TA=100°C
On-State Voltage
VTM
1.7
3
V
IT=300 mA
On-State Current
ITM
300
mA
PF=1.0, VT(RMS)=1.7 V
Surge (Non-Repititive) On-State Current
ITSM
3
A
f=50 Hz
Holding Current
IH
65
500
µA
Latching Current
IL
5
LED Trigger Current
IFT
1
Turn-On Time
tON
Turn-Off Time
tOFF
mA
VT=2.2 V
mA
VAK=5 V
35
µs
VRM=VDM=424 VAC
50
µs
PF=1.0, IT=300 mA
2
Critical State of Rise of Off-State Voltage
Critical Rate of Rise of Voltage at Current
Commutation
dv/dtcr
dv/dtcr
10000
5000
V/µs
V/µs
VD=0.67 VDRM
Tj=25°C
Tj=80°C
dv/dtcrq
dv/dtcrq
10000
5000
V/µs
V/µs
VD=0.67 VDRM, di/dtcrq≤15 A/ms
Tj=25°C
Tj=80°C
8
A/µs
Critical State of Rise of On-State Current
di/dtcr
Thermal Resistance, Junction to Lead
RTHJL
150
°C/W
Critical Rate of Rise of Coupled Input/Output
Voltage
dv(IO)/dt
5000
V/µs
Common Mode Coupling Capacitor
CCM
0.01
pF
Package Capacitance
CIO
0.8
pF
f=1 MHz, VIO=0 V
Isolation Test Voltage, Input-Output
VISO
5300
VACRMS
Relative Humidity ≤50%
Creepage
≥7
mm
Clearance
≥7
mm
Creepage Tracking Resistance per DIN IEC
112/VDE 0303, Part 1 group IIIa per DIN VDE
0110
CTI
Insulation and Isolation
IT=0 A, VRM=VDM=424 VAC
175
Isolation Resistance
Ris
Ris
≥1012
≥1011
Trigger Current Temperature Gradient
∆IFT/∆Tj
7
Capacitance Between Input and Output Circuit
CIO
Ω
Ω
14
µA/K
2
pF
VIO=500, TA=25°C
VIO=500, TA=100°C
VR=0, f=1 kHz
IL420
5–2
Figure 4. Typical output characteristics
IT=f(Vt), parameter: Tj
Figure 1. Forward voltage versus forward current
VF - Forward Voltage - V
1.4
1.3
Ta = -55°C
1.2
Ta = 25°C
1.1
1.0
0.9
Ta = 85°C
0.8
0.7
.1
1
10
IF - Forward Current - mA
100
Figure 2. Peak LED current versus duty factor, Tau
10000
If(pk) - Peak LED Current - mA
τ
Duty Factor
.005
.01
.02
1000
t
.05
.1
.2
100
Figure 5. Current reduction
ITRMS=f(TA) RthJA=125 K/W
Device switch is soldered in PCB or base plate
τ
DF = /t
.5
10
10-6
10-5
10-4
10-3
10-2
10-1
10 0
10 1
t - LED Pulse Duration - s
Figure 3. Maximum LED power dissipation
PLED - LED Power - mW
150
100
Figure 6. Current reduction
ITRMS=f(TPIN5), RthJ=16.5 K/W
Thermocouple measurement must be performed
potentially separated to A1 and A2. Measuring
junction to be as near as possible at case.
50
0
-60
-40
-20
0
20
40
60
80
Ta - Ambient Temperature - °C
100
IL420
5–3
Figure 7. Typical trigger delay time
tgd=f(IF/IFT25°C), VD=200 V, parameter: Tj
Figure 9. Power dissipation
for 40 to 60 Hz line operation, PTOT=f(ITRMS)
Figure 8. Typical off-state current
ID=f(Tj), VD=800 V, parameter: Tj
Figure 10. Pulse trigger current
IFTN=f(tpIF)IFTN normalized to IFT, referring to
tpIF≥1ms, VOP=200 V, f=40 to 60 Hz typ.
IL420
5–4