BRT 11, BRT 12, BRT 13 SITAC AC Switches Without Zero Voltage Switch • AC switch without zero-voltage detector • Electrically insulated between input and output circuit • Microcomputer-compatible by very low trigger current • UL-tested (file no. E 52744), code letter "J" • Available with the following options: Option 1: VDE 0884-approved Option 6: Pins in 10.16 mm spacing Option 7: Pins for sourface mounting Type Opt. VDRM ITRMS IFT dv/d tcr Marking Ordering Code BRT 11 H - 400 V 300 mA 2 mA 10 kV/µs BRT 11 H C67079-A1000-A6 BRT 11 M - 400 V 300 mA 3 mA 10 kV/µs BRT 11 M C67079-A1000-A10 BRT 12 H - 600 V 300 mA 2 mA 10 kV/µs BRT 12 H C67079-A1001-A6 BRT 12 H 1 600 V 300 mA 2 mA 10 kV/µs BRT 12 H C67079-A1041-A5 BRT 12 H 6 600 V 300 mA 2 mA 10 kV/µs BRT 12 H C67079-A1041-A8 BRT 12 H 7 600 V 300 mA 2 mA 10 kV/µs BRT 12 H C67079-A1041-A11 BRT 12 H 1 + 6 600 V 300 mA 2 mA 10 kV/µs BRT 12 H C67079-A1041-A14 BRT 12 M - 600 V 300 mA 3 mA 10 kV/µs BRT 12 M C67079-A1001-A10 BRT 12 M 1 600 V 300 mA 3 mA 10 kV/µs BRT 12 M C67079-A1041-A6 BRT 13 H - 800 V 300 mA 2 mA 10 kV/µs BRT 13 H C67079-A1002-A6 BRT 13 H 6 800 V 300 mA 2 mA 10 kV/µs BRT 13 H C67079-A1042-A8 BRT 13 H 7 800 V 300 mA 2 mA 10 kV/µs BRT 13 H C67079-A1042-A11 BRT 13 M - 800 V 300 mA 3 mA 10 kV/µs BRT 13 M C67079-A1002-A10 Information Package 50 pcs per tube P-DIP-6 Pin Configuration 1 2 3 Anode Cathode Kathode not connected Semiconductor Group 1 4 5 6 A1 do not A2 connect 12.96 BRT 11, BRT 12, BRT 13 Maximum Ratings, at TTjj = 25 °C, unless otherwise specified. AC Switch Parameter Symbol Max. Power dissipation Ptot Chip or operating temperature Tj -40 ...+ 100 Storage temperature Tstg -40 ...+ 150 VIS 5300 VRMS Vref 500 VRMS 600 VDC 175 (group IIIa Insulation test voltage 1) Value Unit 630 mW °C between input/output circuit (climate in acc. with DIN 40046, part2, Nov.74) Reference voltage in acc. with VDE 0110 b (insulation group C) CTI Creepage tracking resistance (in acc. with DIN IEC 112/VDE 0303, part 1) acc. to DIN VDE 0109) Ω Ris Insulation resistance ≥ 1012 ≥ 1011 VIO = 500 V, TA = 25 °C VIO = 500 V, TA = 100 °C DIN humidity category, DIN 40 040 - F Creepage distance (input/output circuit) - ≥ 7.2 Clearance (input/output circuit) - ≥ 7.2 Parameter Symbol Value Param VR VR 6 V Continuous forward current IF 20 mA Surge forward current, IFSM(I) 1.5 A Max. power dissipation,, t ≤ 10 µs µs Ptot 30 mW mm Input Circuit Unit Output Circuit Parameter Symbol BRT BRT BRT 11 12 13 600 800 Unit Repetitive peak off-state voltage VDRM 400 RMS on-state current ITRMS 300 mA Single cycle surge current (50 Hz) ITSM(I) 3 A Max. power dissipation Ptot 600 mW Semiconductor Group 2 V 12.96 BRT 11, BRT 12, BRT 13 Characteristics at T Tjj = 25 °C, unless otherwise specified. Input Circuit Parameter Symbol Forward Voltage, Values Unit min. typ. max. VF - 1.1 1.35 V IR - - RthJA - - IF = 10 mA Reverse current, 10 µA VR = 6 V Thermal resistance 2) 750 K/W junction - ambient Output Circuit Parameter Symbol Values min. typ. Unit max. d v/dtcr Critical rate of rise of off-state voltage kV/µs VD = 0.67 VDRM, Tj = 25 °C 10 - - VD = 0.67 VDRM, Tj = 80 °C 5 - - VD = 0.67 VDRM, Tj = 25 °C, di/dtcrq ≤ 15 A/ms 10 - - VD = 0.67 VDRM, Tj = 80 °C, di/dtcrq ≤ 15 A/ms 5 - - d v/dtcrq Critical rate of rise of voltage at current commutation communication Critical rate of rise of on-state current d i/dtcr 8 - - A/µs Pulse current Itp - - 2 A tpp ≤≤ 55 µs, itpt/d 8 A/µs ≤t 8≤ A/µs µs, ff == 100 100 Hz, , d itpd/d On-state voltage, VT - - 2.3 V ID - 0.5 100 µA IH - 80 500 RthJA - - IT = 300 mA Off-state current TC = 100 °C, VDRM = VDRM Holding current, VD = 10 V Thermal resistance 2) 125 K/W junction - ambient Semiconductor Group 3 12.96 BRT 11, BRT 12, BRT 13 Response Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. IFT Trigger current mA VD = 10 V type H 0.4 - 2 type M 0.8 - 3 Trigger current temperature gradient ∆ IFT/∆ Tj - 7 14 µA/K Capacitance between input and output circuit CIO - - 2 pF VR = 0 V, f = 1 kHz 1) Test AC voltage in acc. with DIN 57883, June 1980 2) Static air, SITAC soldered in pcb or base plate. 3) The SITAC switch is soldered in pcb or base plate. 4) Thermocouple measurement has to be performed potentially separated to A1 and A2. The measuring junction should be as near as possible at the case. Semiconductor Group 4 12.96 BRT 11, BRT 12, BRT 13 Characteristics at T Tjj = 25 °C, unless otherwise specified. Typical input characteristics IF = ƒ(V F) Typical output characteristics IT = ƒ(V T) Current reduction ITRMS = ƒ(TA) Current reduction I TRMS = ƒ(TPIN5) RthJ-PIN5 = 16,5 K/W 4) RthJA = 125 K/W 3) Semiconductor Group 5 12.96 BRT 11, BRT 12, BRT 13 Typical trigger delay time tgd = f(IF/IFT25°C) V D = 200V Power dissipation for 40 ... 60 Hz line operation Ptot = ƒ(ITRMS) Typical off-state current I D = f(Tj) V D = 800V Pulse trigger current IFTN = f(tpIF ) IFTN normalized to IFT refering to tpIF ≥ 1 ms V op = 220 V, f= 40 ... 60 Hz typ. Semiconductor Group 6 12.96