IL420/ IL4208 VISHAY Vishay Semiconductors Optocoupler, Phototriac Output, High dV/dt, Low Input Current Features • • • • • High input sensitivity IFT = 2.0 mA 600/800 V blocking voltage 300 mA on-state current High static dV/dt 10 kV/µs Inverse parallel SCRs provide commutating dV/dt > 10 kV/µs • Very low leakage < 10 µA • Isolation Test Voltage 5300 VRMS • Small 6-pin DIP package Agency Approvals • • • • UL - File No. E52744 System Code H or J CSA -93751 BABT/ BSI IEC60950 IEC60965 DIN EN 60747-5-2(VDE0884) DIN EN 60747-5-5 pending Available with Option 1 Applications Solid-state relays Industrial controls Office equipment Consumer appliances. A 1 6 MT2 C 2 5 NC 4 MT1 NC 3 i179035 dt of greater than 10 kV/µs. This clamp circuit has a MOSFET that is enhanced when high dV/dt spikes occur between MT1 and MT2 of the TRIAC. When conducting, the FET clamps the base of the phototransistors, disabling the firs stage SCR predriver The 600/800 V blocking voltage permits control of offline voltages up to 240 VAC, with a safety factor of more than two, and is sufficient for as much as 380 VAC. The IL420/ IL4208 isolates low-voltage logic from 120, 240, and 380 VAC lines to control resistive, inductive, or capacitive loads including motors, solenoids, high current thyristors or TRIAC and relays. Order Information Description The IL420/ IL4208 consists of a GaAs IRLED optically coupled to a photosensitive non-zero crossing TRIAC network. The TRIAC consists of two inverse parallel connected monolithic SCRs. These three semiconductors are assembled in a six pin dual in-line package. High input sensitivity is achieved by using an emitter follower phototransistor and a cascaded SCR predriver resulting in an LED trigger current of less than 2.0 mA (DC) The IL420/ IL4208 used two discrete SCRs resulting in a commutating dV/dt of greater than 10 k/µs. The use of a proprietary dV/dt clam results in a static dV/ Document Number 83629 Rev. 1.4, 26-Apr-04 Part Remarks IL420 600 V VDRM, DIP-6 IL4208 800 V VDRM, DIP-6 IL420-X006 600 V VDRM, DIP-6 400 mil (option 6) IL420-X007 600 V VDRM, SMD-6 (option 7) IL420-X009 600 V VDRM, SMD-6 (option 9) IL4208-X007 800 V VDRM, SMD-6 (option 7) IL4208-X009 800 V VDRM, SMD-6 (option 9) For additional information on the available options refer to Option Information. www.vishay.com 1 IL420/ IL4208 VISHAY Vishay Semiconductors Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum Rating for extended periods of the time can adversely affect reliability. Input Symbol Value Reverse voltage Parameter Test condition VR 6.0 V Forward current IF 60 mA Surge current IFSM 2.5 A Power dissipation Pdiss Derate from 25 °C Unit 100 mW 1.33 mW/°C Output Parameter Test condition Part Symbol Value Unit IL420 VDRM 600 V IL4208 VDRM 800 V RMS on-state current ITM 300 mA Single cycle surge current ITSM 3.0 A Power dissipation Pdiss 500 mW 6.6 mW/°C Peak off-state voltage Derate from 25 °C Coupler Parameter Isolation test voltage 1) Test condition t = 1.0 sec. Symbol Value Unit VISO 5300 VRMS Pollution degree (DIN VDE 0109) 2 Creepage distance ≥ 7.0 mm Clearance ≥ 7.0 mm Comparative tracking 2) ≥ 175 VIO = 500 V, Tamb = 25 °C RIO ≥ 1012 Ω VIO = 500 V, Tamb = 100 °C RIO ≥ 1011 Ω Storage temperature range Tstg - 55 to + 150 °C Ambient temperature range Tamb - 55 to + 100 °C Tsld 260 °C Isolation resistance Soldering temperature max. ≤ 10 sec. dip soldering ≥ 0.5 mm from case bottom 1) between emitter and detector, climate per DIN 50014, part 2, Nov. 74 2) index per DIN IEC 60112/VDE 0303 part 1, group IIIa per DIN VDE 6110 www.vishay.com 2 Document Number 83629 Rev. 1.4, 26-Apr-04 IL420/ IL4208 VISHAY Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering evaluation. Typical values are for information only and are not part of the testing requirements. Input Typ. Max Forward voltage Parameter IF = 10 mA Test condition VF 1.16 1.35 V Reverse current VR = 6.0 V IR 0.1 10 µA Input capacitance VF = 0 V, f = 1.0 MHz Thermal resistance, junction to ambient Symbol Min Unit CIN 40 pF Rthja 750 °C/W Output Parameter Off-state voltage Part Symbol Min Typ. ID(RMS) = 70 µA Test condition IL420 VD(RMS) 424 460 ID(RMS) = 70 µA IL4208 VD(RMS) 565 V IL420 VDRM 600 V IL4208 VDRM 800 Repetitive peak off-state voltage IDRM = 100 µs Max Unit V V Off-state current VD = VDRM,, TA = 100 °C IBD 10 1.7 100 µA On-state voltage IT = 300 mA VTM 30 V On-current PF = 1.0, VT(RMS) = 1.7 V ITM 300 mA Surge (Non-repetitive) on-state current f = 50 Hz ITSM 3.0 A Holding current IH 65 Latching current VT = 2.2 V IL 5.0 LED trigger current VAK = 5.0 V IFT 1.0 2.0 ∆IFT/∆Tj 7.0 14 Trigger current temperature gradient Critical state of rise off-state voltage VD = 0.67 VDRM, TJ = 25 °C VD = 0.67 VDRM, TJ = 80 °C Critical rate of rise of voltage at current commutation VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms , TJ = 25 °C VD = 0.67 VDRM, dI/dtcrq ≤ 15 A/ms , TJ = 80 °C dV/dtcr 500 µA mA µA/°C 1000 V/µs dV/dtcr 5000 V/µs dV/dtcrq 10000 V/µs dV/dtcrq 5000 V/µs Critical state of rise of on-state current dI/dtcr 8.0 A/µs Thermal resistance, junction to ambient Rthja 150 °C/W Coupler Test condition Symbol Critical rate of rise of coupled input/output voltage Parameter IT = 0 A, VRM = VDM = VD(RMS) dV/dt Capacitance (input-output) f = 1.0 MHz, VIO = 0 V CIO Isolation resistance VIO = 500, TA = 25 °C RIO VIO = 500, TA = 100 °C RIO Document Number 83629 Rev. 1.4, 26-Apr-04 Min Typ. Max Unit 500 V/µs 0.8 pF 12 Ω 11 Ω 10 10 www.vishay.com 3 IL420/ IL4208 VISHAY Vishay Semiconductors Switching Characteristics Parameter Turn-on time Test condition Symbol Min Typ. Max Unit VRM = VDM = VD(RMS) ton 35 µs PF = 1.0, IT = 300 mA toff 50 µs Typical Characteristics (Tamb = 25 °C unless otherwise specified) 150 1.4 VF - Forward Voltage - V 1.3 Ta = -55°C LED - LED Power - mW 1.2 Ta = 25°C 1.1 1.0 0.9 Ta = 85°C 0.8 0.7 .1 1 10 IF - Forward Current - mA iil420_01 If(pk) - Peak LED Current - mA 10000 iil420_03 -40 -20 0 20 40 60 Ta - Ambient Temperature - °C 80 100 Fig. 3 Maximum LED Power Dissipation τ Duty Factor 1000 100 10 10 -6 .005 .01 .02 t .05 .1 .2 .5 10 -5 iil420_02 www.vishay.com IT = f(VT), parameter: Tj DF =τ/t 10 -4 10 -3 10 -2 10 -1 t -LED Pulse Duration -s 10 0 Fig. 2 Peak LED Current vs. Duty Factor, Tau 4 50 0 -60 100 Fig. 1 Forward Voltage vs. Forward Current 100 101 iil420_04 Fig. 4 Typical Output Characteristics Document Number 83629 Rev. 1.4, 26-Apr-04 IL420/ IL4208 VISHAY Vishay Semiconductors ITRMS=f(TA), RthJA=150 K/W Device switch soldered in pcb or base plate. ID=f (Tj), VD=600 V, parameter: Tj iil420_08 iil420_05 Fig. 5 Current Reduction Fig. 8 Typical Off-State Current for 40 to 60 Hz line operation, Ptot=f(ITRMS) ITRMS=f(TPIN5), RthJ–PIN5=16.5 K/W Thermocouple measurement must be performed potentially separated to A1 and A2. Measuring junction as near as possible at the case. iil420_06 iil420_09 Fig. 6 Current Reduction Fig. 9 Power Dissipation IFTN=f (tpIF)IFTN normalized to IFT, referring to tpIF)I≥1.0 ms, VOP=200 V, f=40 to 60 Hz typ. tgd=f (IFIFT25°C), VD=200 V, parameter: Tj iil420_07 Fig. 7 Typical Trigger Delay Time Document Number 83629 Rev. 1.4, 26-Apr-04 iil420_10 Fig. 10 Pulse Trigger Current www.vishay.com 5 IL420/ IL4208 VISHAY Vishay Semiconductors Package Dimensions in Inches (mm) 3 2 1 4 5 6 pin one ID .248 (6.30) .256 (6.50) ISO Method A .335 (8.50) .343 (8.70) .039 (1.00) Min. .130 (3.30) .150 (3.81) 4° typ . 18° .033 (0.84) typ. .018 (0.46) .020 (0.51) .100 (2.54) typ Option 6 Option 7 .407 (10.36) .391 (9.96) .307 (7.8) .291 (7.4) .300 (7.62) TYP. .300–.347 (7.62–8.81) Option 9 .375 (9.53) .395 (10.03) .180 (4.6) .160 (4.1) .0040 (.102) .315 (8.0) MIN. 6 .008 (.20) .012 (.30) .130 (3.30) .150 (3.81) .300 (7.62) ref. .028 (0.7) MIN. www.vishay.com 3°–9° .033 (0.84) typ. i178014 .014 (0.35) .010 (0.25) .400 (10.16) .430 (10.92) .300 (7.62) typ. .048 (1.22) .052 (1.32) .331 (8.4) MIN. .406 (10.3) MAX. .0098 (.249) .012 (.30) typ. .020 (.51) .040 (1.02) .315 (8.00) min. 15° max. 18450 Document Number 83629 Rev. 1.4, 26-Apr-04 IL420/ IL4208 VISHAY Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 83629 Rev. 1.4, 26-Apr-04 www.vishay.com 7