BRT 21, BRT 22, BRT 23 SITAC AC Switches With Zero Voltage Switch Without Zero Voltage Switch • AC switch with zero-voltage detector • Electrically insulated between input and output circuit • Microcomputer-compatible by very low trigger current • UL-tested (file no. E 52744), code letter "J" • Available with the following options: Option 1: VDE 0884-approved Option 6: Pins in 10.16 mm spacing Option 7: Pins for sourface mounting Type Opt. VDRM ITRMS IFT dv/d tcr Marking Ordering Code BRT 21 H - 400 V 300 mA 2 mA 10 kV/µs BRT 21 H C67079-A1020-A6 BRT 21 H 1 + 6 400 V 300 mA 2 mA 10 kV/µs BRT 21 H C67079-A1050-A16 BRT 22 H - 600 V 300 mA 2 mA 10 kV/µs BRT 22 H C67079-A1021-A6 BRT 22 H 1 600 V 300 mA 2 mA 10 kV/µs BRT 22 H C67079-A1051-A5 BRT 22 H 7 600 V 300 mA 2 mA 10 kV/µs BRT 22 H C67079-A1051-A11 BRT 22 H 1 + 6 600 V 300 mA 2 mA 10 kV/µs BRT 22 H C67079-A1051-A16 BRT 22 H 1 + 7 600 V 300 mA 2 mA 10 kV/µs BRT 22 H C67079-A1051-A17 BRT 22 M - 600 V 300 mA 3 mA 10 kV/µs BRT 22 M C67079-A1021-A10 BRT 22 M 1 600 V 300 mA 3 mA 10 kV/µs BRT 22 M C67079-A1051-A6 BRT 23 H - 800 V 300 mA 2 mA 10 kV/µs BRT 23 H C67079-A1022-A6 BRT 23 H 6 800 V 300 mA 2 mA 10 kV/µs BRT 23 H C67079-A1052-A8 BRT 23 H 7 800 V 300 mA 2 mA 10 kV/µs BRT 23 H C67079-A1052-A11 BRT 23 H 1 + 6 800 V 300 mA 2 mA 10 kV/µs BRT 23 H C67079-A1052-A14 300 mA 3 mA 10 kV/µs BRT 23 M C67079-A1022-A10 BRT 23 M - 800 V Information Package 50 pcs per tube P-DIP-6 Pin Configuration 1 2 3 Anode Cathode Kathode not connected Semiconductor Group 1 4 5 6 A1 do not A2 connect 12.96 BRT 21, BRT 22, BRT 23 Maximum Ratings, at TTjj = 25 °C, unless otherwise specified. AC Switch Parameter Symbol Max. Power dissipation Ptot Chip or operating temperature Tj -40 ...+ 100 Storage temperature Tstg -40 ...+ 150 VIS 5300 VRMS Vref 500 VRMS 600 VDC 175 (group IIIa Insulation test voltage 1) Value Unit 630 mW °C between input/output circuit (climate in acc. with DIN 40046, part2, Nov.74) Reference voltage in acc. with VDE 0110 b (insulation group C) CTI Creepage tracking resistance (in acc. with DIN IEC 112/VDE 0303, part 1) acc. to DIN VDE 0109) Ω Ris Insulation resistance ≥ 1012 ≥ 1011 VIO = 500 V, TA = 25 °C VIO = 500 V, TA = 100 °C DIN humidity category, DIN 40 040 - F Creepage distance (input/output circuit) - ≥ 7.2 Clearance (input/output circuit) - ≥ 7.2 Parameter Symbol Value Param VR VR 6 V Continuous forward current IF 20 mA Surge forward current, IFSM(I) 1.5 A Max. power dissipation,, t ≤ 10 µs µs Ptot 30 mW mm Input Circuit Unit Output Circuit Parameter Symbol BRT BRT BRT 21 22 23 600 800 Unit Repetitive peak off-state voltage VDRM 400 RMS on-state current ITRMS 300 mA Single cycle surge current (50 Hz) ITSM(I) A Max. power dissipation Ptot 3 600 Semiconductor Group 2 V mW 12.96 BRT 21, BRT 22, BRT 23 Characteristics at T Tjj = 25 °C, unless otherwise specified. Input Circuit Parameter Symbol Forward Voltage, Values Unit min. typ. max. VF - 1.1 1.35 V IR - - RthJA - - IF = 10 mA Reverse current, 10 µA VR = 6 V Thermal resistance 2) 750 K/W junction - ambient Output Circuit Parameter Symbol Values min. typ. Unit max. d v/dtcr Critical rate of rise of off-state voltage kV/µs VD = 0.67 VDRM, Tj = 25 °C 10 - - VD = 0.67 VDRM, Tj = 80 °C 5 - - VD = 0.67 VDRM, TTjj == 25 i/dttcrq 25 °C, °C, ddi/d 15 A/ms A/ms crq ≤≤ 15 10 - - i/dttcrq 80 °C, °C, ddi/d VD = 0.67 VDRM, TTjj == 80 15 A/ms crq ≤≤15 5 - - d v/dtcrq Critical rate of rise of voltage at current commutation communication Critical rate of rise of on-state current d i/dtcr 8 - - A/µs Pulse current Itp - - 2 A tpp ≤≤ 55 µs, itpt/d 8 A/ms ≤t 8≤ A/µs µs, ff == 100 100 Hz, , d itpd/d On-state voltage, VT - - 2.3 V IT = 300 mA ID Off-state current µA TC = 25 °C, VDRM - 7 30 TC = 80 °C, VDRM - 12 100 1000 IH - 80 500 RthJA - - Holding current, VD = 10 V Thermal resistance 2) 125 K/W junction - ambient Semiconductor Group 3 12.96 BRT 21, BRT 22, BRT 23 Response Characteristics at Tj = 25 °C, unless otherwise specified. Parameter Symbol Values min. typ. Unit max. IFT1 Trigger current 1 mA VD = 6 V type H 0.4 - 2 type M 0.4 - 3 type H - - 6 type M - - 9 - 7 14 µA/K V IFT2 Trigger current 2 Vop = 220 V, ƒ = 50 Hz,Tj = 100°C tpF > 10 ms ∆IFT1/∆Tj Trigger current temperature gradient ∆IFT2/∆Tj Inhibit voltage, IF = IFT1 VDINH - 8 12 Inhibit voltage temperature gradient ∆VDINH / - -20 - IDINH 7- 50 CIO - - mV/K ∆Tj Off-state current in inhibit state 200 µA IF = IFT1 , VDRM Capacitance between input and output circuit 2 pF VR = 0 V, f = 1 kHz 1) Static air, SITAC soldered in pcb or base plate. 2) Test AC voltage in acc. with DIN 57883, June 1980. 3) The SITAC switch is soldered in pcb or base plate. 4) Termocouple measurement has to be performed potentially separated to A1 and A2. The measuring junction should be as near as possible at the case. 5) The SITAC zero voltage switch can be triggered only in the hatched area below the Tj curves. Semiconductor Group 4 12.96 BRT 21, BRT 22, BRT 23 Characteristics at T Tjj = 25 °C, unless otherwise specified. Typical input characteristics IF = ƒ(V F) Typical output characteristics IT = ƒ(V T) Current reduction ITRMS = ƒ(TA) Current reduction I TRMS = ƒ(TPIN5) RthJ-PIN5 = 16,5 K/W 4) RthJA = 125 K/W 3) Semiconductor Group 5 12.96 BRT 21, BRT 22, BRT 23 Typical trigger delay time tgd = f(IF/IFT25°C) V D = 200V Power dissipation for 40 ... 60 Hz line operation Ptot = ƒ(ITRMS) Typ. inhibit current IDINH = ƒ(IF/IFT 25°C) V D = 800 V Typ.static inhibit voltage limit 5) V DINHmin = ƒ(IF/IFT 25°C),parameter: Tj Semiconductor Group 6 12.96