Supertex inc. TN2106 N-Channel Enhancement-Mode Vertical DMOS FET Features ► ► ► ► ► ► ► General Description Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo-voltaic drives Analog switches General purpose line drivers Telecom switches Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Ordering Information Part Number Product Summary Package Option Packing TN2106K1-G TO-236AB (SOT-23) 3000/Reel TN2106N3-G TO-92 1000/Bag TN2106N3-G P002 TO-92 2000/Reel TN2106N3-G P013 60V 2.0V DRAIN TO-236AB (SOT-23) Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V -55 C to +150 C O O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance SOURCE GATE Parameter Operating and storage temperature DRAIN SOURCE Absolute Maximum Ratings TO-92 GATE Product Marking W = Code for week sealed = “Green” Packaging N1LW Package may or may not include the following marks: Si or TO-236AB (SOT-23) SiT N 2106 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 θja TO-236AB (SOT-23) 203 C/W TO-92 132OC/W Doc.# DSFP-TN2106 B080913 (max) 2.5Ω TN2106N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Package VGS(th) (max) Pin Configuration TN2106N3-G P003 TN2106N3-G P005 RDS(ON) BVDSS/BVDGS O Supertex inc. www.supertex.com TN2106 Thermal Characteristics (continuous)† ID ID Power Dissipation (pulsed) @TC = 25OC TO-236AB (SOT-23) 280mA 0.8A TO-92 300mA 1.0A Package IDR† IDRM 0.36W 280mA 0.8A 0.74W 300mA 1.0A Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A Sym Parameter BVDSS VGS(th) = 25OC unless otherwise specified) Min Typ Max Units Drain-to-source breakdown voltage 60 - - V VGS = 0V, ID = 1.0mA Gate threshold voltage 0.6 - 2.0 V VGS = VDS, ID = 1.0mA Change in VGS(th) with temperature - -3.8 -5.5 IGSS Gate body leakage - 0.1 100 - - 1.0 IDSS Zero gate voltage drain current ID(ON) On-state drain current ΔVGS(th) RDS(ON) - - 100 0.6 - - - - 5.0 - - 2.5 - 0.70 1.0 150 400 - Static drain-to-source on-state resistance ΔRDS(ON) Change in RDS(ON) with temperature GFS Forward transductance CISS Input capacitance - 35 50 COSS Common source output capacitance - 17 25 CRSS Reverse transfer capacitance - 7.0 8.0 td(ON) Turn-on delay time - 3.0 5.0 Rise time - 5.0 8.0 Turn-off delay time - 6.0 9.0 Fall time - 5.0 8.0 Diode forward voltage drop - 1.2 Reverse recovery time - 400 tr td(OFF) tf VSD trr Conditions mV/ C VGS = VDS, ID = 1.0mA O nA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating µA VDS = 0.8Max Rating, VGS = 0V, TA = 125OC A VGS = 10V, VDS = 25V Ω %/OC VGS = 4.5V, ID = 200mA VGS = 10V, ID = 500mA VGS = 10V, ID = 500mA mmho VDS = 25V, ID = 500mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 0.5A, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 500mA - ns VGS = 0V, ISD = 500mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN2106 B080913 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN2106 Typical Performance Curves Output Characteristics 2.5 Saturation Characteristics 2.5 VGS = 10V VGS = 10V 2.0 1.5 ID (amperes) ID (amperes) 2.0 8V 1.0 6V 0.5 8V 1.0 6V 0.5 4V 0 1.5 4V 3V 3V 0 10 20 30 40 0 50 0 2.0 4.0 VDS (volts) 0.5 1.0 VDS = 25V TA = -55OC 25OC 125OC 0.1 0 TO-92 0.6 0.4 SOT-23 0.2 0 0.2 0.4 0.6 0.8 ID (amperes) 00 1.0 1.0 Thermal Resistance (normalized) 0.1 0.01 75 100 125 150 Thermal Response Characteristics 0.8 0.6 TO-236AB PD = 0.36W TA = 25OC 0.4 0.2 TO-92 PD = 1.0W TC = 25OC TA = 25OC 0.1100 1 0 10 VDS (volts) Doc.# DSFP-TN2106 B080913 50 SOT-23 (pulsed) SOT-23 (DC) 0.001 25 TA (OC) Maximum Rated Safe Operating Area 1.0 ID (amperes) 10 Power Dissipation vs. Temperature 0.8 PD (watts) GFS (siemens) 0.4 0.2 8.0 VDS (volts) Transconductance vs. Drain Current 0.3 6.0 0.001 0.01 0.1 1.0 10 tP (seconds) 3 Supertex inc. www.supertex.com TN2106 Typical Performance Curves (cont.) BVDSS Variation with Temperature On-Resistance vs. Drain Current 10 1.1 VGS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 8.0 1.0 VGS = 10V 6.0 4.0 2.0 0.9 -50 100 0 150 0 0.5 1.0 1.5 2.0 2.5 Tj (OC) ID (amperes) Transfer Characteristics VGS(th) and RDS(ON) Variation with Temperature 2.0 VDS = 25V 0.8 1.2 TA = -55OC VGS(th) (normalized) ID (amperes) 50 0.6 25OC 0.4 125OC RDS(ON) @ 10V, 0.5A 1.6 1.0 1.2 0.8 VGS(th) @ 1.0mA 0.6 0.8 RDS(ON) (normalized) 1.0 0 0.4 0.2 0.4 0 0 2.0 4.0 6.0 8.0 -50 10 0 50 VGS (volts) 100 0 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 100 10 f = 1.0MHz 8.0 VGS (volts) C (picofarads) 75 50 CISS 25 COSS 6.0 VDS = 10V VDS = 20V 4.0 92 pF 2.0 CRSS 0 0 10 38 pF 20 30 0 40 Doc.# DSFP-TN2106 B080913 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 4 Supertex inc. www.supertex.com TN2106 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Side View Symbol Dimension (mm) View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 L L1 0.20 † 0.95 BSC 1.90 BSC 0.50 0.60 0.54 REF θ 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. Doc.# DSFP-TN2106 B080913 5 Supertex inc. www.supertex.com TN2106 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2106 B080913 6 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com