Supertex inc. TN2130 N-Channel Enhancement-Mode Vertical DMOS FET General Description Features ► ► ► ► ► ► ► Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces – ideal for TTL and CMOS Solid state relays Battery operated systems Photo-voltaic drives Analog switches General purpose line drivers Telecom switches Ordering Information Part Number TN2130K1-G Package Option TO-236AB (SOT-23) Product Summary Packing 3000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage -55 C to +150OC O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Doc.# DSFP-TN2130 B080913 θja 203OC/W VGS(th) (max) (max) 300V 25Ω 2.4V DRAIN SOURCE ±20V Operating and storage temperature TO-236AB (SOT-23) RDS(ON) BVDSS/BVDGS Pin Configuration Absolute Maximum Ratings Package Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. GATE TO-236AB (SOT-23) Product Marking N1TW W = Code for Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-236AB (SOT-23) Supertex inc. www.supertex.com TN2130 Thermal Characteristics ID Package (continuous)† ID Power Dissipation (pulsed) @TC = 25OC 85mA 200mA 0.36W TO-236AB (SOT-23) IDR† IDRM 85mA 200mA Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T A = 25OC unless otherwise specified) Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage 300 - - V VGS = 0V, ID = 1.0mA VGS(th) Gate threshold voltage 0.8 - 2.4 V VGS = VDS, ID = 1.0mA Change in VGS(th) with temperature - - -5.5 IGSS Gate body leakage - - 100 - - 10 IDSS Zero gate voltage drain current ID(ON) On-state drain current ΔVGS(th) Conditions mV/OC VGS = VDS, ID = 1.0mA nA VGS = ± 20V, VDS = 0V VGS = 0V, VDS = Max Rating µA VDS = 0.8Max Rating, VGS = 0V, TA = 125OC VGS = 10V, VDS = 25V - - 100 250 - - mA Static drain-to-source on-state resistance - - 25 Ω VGS = 4.5V, ID = 120mA Change in RDS(ON) with temperature - - 1.1 %/OC VGS = 4.5V, ID = 120mA GFS Forward transductance - 250 - CISS Input capacitance - - 50 COSS Common source output capacitance - - 15 CRSS Reverse transfer capacitance - - 5.0 td(ON) Turn-on delay time - - 10 Rise time - - 7.0 Turn-off delay time - - 12 Fall time - - 15 Diode forward voltage drop - - Reverse recovery time - 400 RDS(ON) ΔRDS(ON) tr td(OFF) tf VSD trr mmho VDS = 25V, ID = 100mA pF VGS = 0V, VDS = 25V, f = 1.0MHz ns VDD = 25V, ID = 120mA, RGEN = 25Ω 1.8 V VGS = 0V, ISD = 120mA - ns VGS = 0V, ISD = 120mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 10V INPUT 0V Pulse Generator 10% t(ON) td(ON) VDD OUTPUT 0V Doc.# DSFP-TN2130 B080913 VDD 90% t(OFF) tr td(OFF) OUTPUT RGEN tf 10% 10% 90% RL INPUT D.U.T. 90% 2 Supertex inc. www.supertex.com TN2130 Typical Performance Curves Output Characteristics 1.0 Saturation Characteristics 0.5 0.8 VGS = 10V 6V 0.4 0.6 ID (amperes) ID (amperes) 4V VGS = 10V 8V 6V 4V 0.4 3V 0.2 0 10 20 30 40 3V 0.2 0.1 2V 0 0.3 2V 0 0 50 2.0 4.0 VDS (volts) 1.0 10 Power Dissipation vs. Temperature VDS = 15V 0.8 0.6 PD (watts) 0.8 GFS (siemens) 8.0 VDS (volts) Transconductance vs. Drain Current 1.0 6.0 TA = -55OC 25OC 0.4 0.2 0.6 0.4 0.2 SOT-23 125OC 0 0.1 0 0.2 0.3 0.4 0 0.5 0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) SOT-23 (DC) ID (amperes) 0.01 TA = 25OC 0.001 0 Doc.# DSFP-TN2130 B080913 10 VDS (volts) 100 125 150 100 Thermal Response Characteristics 1.0 SOT-23 (pulsed) 0.1 75 TA (OC) 0.8 0.6 0.4 0.2 0 1000 SOT-23 PD = 0.36W TA = 25OC 0 0.01 0.1 1.0 10 tP (seconds) 3 Supertex inc. www.supertex.com TN2130 Typical Performance Curves (cont.) BVDSS Variation with Temperature 1.1 On-Resistance vs. Drain Current 50 VGS = 4.5V RDS(ON) (ohms) BVDSS (normalized) 40 1.0 VGS = 10V 30 20 10 1.0 0 50 100 0 0.2 0.4 0.6 0.8 1.0 Tj (OC) ID (amperes) Transfer Characteristics VGS and RDS Variation with Temperature 2.0 VDS = 15V 1.2 RDS(ON) @ 4.5V, 120mA TA = -55OC 0.6 VGS(th) (normalized) 25OC 0.8 ID (amperes) 0 150 125OC 0.4 1.6 1.1 1.2 1.0 0.8 0.9 VGS(th) @ 1.0mA 0.2 RDS(ON) (normalized) 0.9 -50 0.4 0.8 0 0 2.0 4.0 6.0 8.0 10 -50 0 50 VGS (volts) 0 150 100 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics 10 50 f = 1.0MHz 8.0 VGS (volts) C (picofarads) VDS = 10V CISS 25 10 20 30 0 40 VDS (volts) Doc.# DSFP-TN2130 B080913 VDS = 40V 4.0 28pF CRSS 0 80 pF 2.0 COSS 0 6.0 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) 4 Supertex inc. www.supertex.com TN2130 3-Lead TO-236AB (SOT-23) Package Outline (K1) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Side View Symbol Dimension (mm) View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 0.95 BSC 1.90 BSC L 0.20† 0.50 0.60 L1 0.54 REF θ 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TN2130 B080913 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com