TN2130 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
TN2130
N-Channel Enhancement-Mode
Vertical DMOS FET
General Description
Features
►
►
►
►
►
►
►
Free from secondary breakdown
Low power drive requirement
Ease of paralleling
Low CISS and fast switching speeds
Excellent thermal stability
Integral source-drain diode
High input impedance and high gain
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Applications
►►
►►
►►
►►
►►
►►
►►
Logic level interfaces – ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo-voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TN2130K1-G
Package Option
TO-236AB (SOT-23)
Product Summary
Packing
3000/Reel
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
-55 C to +150OC
O
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Typical Thermal Resistance
Doc.# DSFP-TN2130
B080913
θja
203OC/W
VGS(th)
(max)
(max)
300V
25Ω
2.4V
DRAIN
SOURCE
±20V
Operating and storage temperature
TO-236AB (SOT-23)
RDS(ON)
BVDSS/BVDGS
Pin Configuration
Absolute Maximum Ratings
Package
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
GATE
TO-236AB (SOT-23)
Product Marking
N1TW
W = Code for Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-236AB (SOT-23)
Supertex inc.
www.supertex.com
TN2130
Thermal Characteristics
ID
Package
(continuous)†
ID
Power Dissipation
(pulsed)
@TC = 25OC
85mA
200mA
0.36W
TO-236AB (SOT-23)
IDR†
IDRM
85mA
200mA
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T
A
= 25OC unless otherwise specified)
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
300
-
-
V
VGS = 0V, ID = 1.0mA
VGS(th)
Gate threshold voltage
0.8
-
2.4
V
VGS = VDS, ID = 1.0mA
Change in VGS(th) with temperature
-
-
-5.5
IGSS
Gate body leakage
-
-
100
-
-
10
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
ΔVGS(th)
Conditions
mV/OC VGS = VDS, ID = 1.0mA
nA
VGS = ± 20V, VDS = 0V
VGS = 0V, VDS = Max Rating
µA
VDS = 0.8Max Rating,
VGS = 0V, TA = 125OC
VGS = 10V, VDS = 25V
-
-
100
250
-
-
mA
Static drain-to-source on-state resistance
-
-
25
Ω
VGS = 4.5V, ID = 120mA
Change in RDS(ON) with temperature
-
-
1.1
%/OC
VGS = 4.5V, ID = 120mA
GFS
Forward transductance
-
250
-
CISS
Input capacitance
-
-
50
COSS
Common source output capacitance
-
-
15
CRSS
Reverse transfer capacitance
-
-
5.0
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
7.0
Turn-off delay time
-
-
12
Fall time
-
-
15
Diode forward voltage drop
-
-
Reverse recovery time
-
400
RDS(ON)
ΔRDS(ON)
tr
td(OFF)
tf
VSD
trr
mmho VDS = 25V, ID = 100mA
pF
VGS = 0V,
VDS = 25V,
f = 1.0MHz
ns
VDD = 25V,
ID = 120mA,
RGEN = 25Ω
1.8
V
VGS = 0V, ISD = 120mA
-
ns
VGS = 0V, ISD = 120mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
10V
INPUT
0V
Pulse
Generator
10%
t(ON)
td(ON)
VDD
OUTPUT
0V
Doc.# DSFP-TN2130
B080913
VDD
90%
t(OFF)
tr
td(OFF)
OUTPUT
RGEN
tf
10%
10%
90%
RL
INPUT
D.U.T.
90%
2
Supertex inc.
www.supertex.com
TN2130
Typical Performance Curves
Output Characteristics
1.0
Saturation Characteristics
0.5
0.8
VGS = 10V
6V
0.4
0.6
ID (amperes)
ID (amperes)
4V
VGS = 10V
8V
6V
4V
0.4
3V
0.2
0
10
20
30
40
3V
0.2
0.1
2V
0
0.3
2V
0
0
50
2.0
4.0
VDS (volts)
1.0
10
Power Dissipation vs. Temperature
VDS = 15V
0.8
0.6
PD (watts)
0.8
GFS (siemens)
8.0
VDS (volts)
Transconductance vs. Drain Current
1.0
6.0
TA = -55OC
25OC
0.4
0.2
0.6
0.4
0.2
SOT-23
125OC
0
0.1
0
0.2
0.3
0.4
0
0.5
0
25
50
ID (amperes)
Maximum Rated Safe Operating Area
1.0
Thermal Resistance (normalized)
SOT-23 (DC)
ID (amperes)
0.01
TA = 25OC
0.001
0
Doc.# DSFP-TN2130
B080913
10
VDS (volts)
100
125
150
100
Thermal Response Characteristics
1.0
SOT-23 (pulsed)
0.1
75
TA (OC)
0.8
0.6
0.4
0.2
0
1000
SOT-23
PD = 0.36W
TA = 25OC
0
0.01
0.1
1.0
10
tP (seconds)
3
Supertex inc.
www.supertex.com
TN2130
Typical Performance Curves (cont.)
BVDSS Variation with Temperature
1.1
On-Resistance vs. Drain Current
50
VGS = 4.5V
RDS(ON) (ohms)
BVDSS (normalized)
40
1.0
VGS = 10V
30
20
10
1.0
0
50
100
0
0.2
0.4
0.6
0.8
1.0
Tj (OC)
ID (amperes)
Transfer Characteristics
VGS and RDS Variation with Temperature
2.0
VDS = 15V
1.2
RDS(ON) @ 4.5V, 120mA
TA = -55OC
0.6
VGS(th) (normalized)
25OC
0.8
ID (amperes)
0
150
125OC
0.4
1.6
1.1
1.2
1.0
0.8
0.9
VGS(th) @ 1.0mA
0.2
RDS(ON) (normalized)
0.9
-50
0.4
0.8
0
0
2.0
4.0
6.0
8.0
10
-50
0
50
VGS (volts)
0
150
100
Tj (OC)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
10
50
f = 1.0MHz
8.0
VGS (volts)
C (picofarads)
VDS = 10V
CISS
25
10
20
30
0
40
VDS (volts)
Doc.# DSFP-TN2130
B080913
VDS = 40V
4.0
28pF
CRSS
0
80 pF
2.0
COSS
0
6.0
0
0.2
0.4
0.6
0.8
1.0
QG (nanocoulombs)
4
Supertex inc.
www.supertex.com
TN2130
3-Lead TO-236AB (SOT-23) Package Outline (K1)
2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch
D
3
E1 E
Gauge
Plane
0.25
1
e
b
e1
Seating
Plane
L
L1
2
View B
Top View
View B
A
A
A2
Seating
Plane
A1
Side View
Symbol
Dimension
(mm)
View A - A
A
A
A1
A2
b
D
E
E1
MIN
0.89
0.01
0.88
0.30
2.80
2.10
1.20
NOM
-
-
0.95
-
2.90
-
1.30
MAX
1.12
0.10
1.02
0.50
3.04
2.64
1.40
e
e1
0.95
BSC
1.90
BSC
L
0.20†
0.50
0.60
L1
0.54
REF
θ
0O
8O
JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO236ABK1, Version C041309.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TN2130
B080913
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com