Supertex inc. TP0610T P-Channel Enhancement-Mode Vertical DMOS FET Features ►► ►► ►► ►► ►► ►► ►► General Description High input impedance and high gain Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode Free from secondary breakdown This low threshold, enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Applications ►► ►► ►► ►► ►► ►► ►► Logic level interfaces - ideal for TTL and CMOS Solid state relays Battery operated systems Photo voltaic systems Analog switches Power management Telecom switches Ordering Information Product Summary Part Number Package Option Packing TP0610T-G TO-236AB (SOT-23) 3000/Reel -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. BVDSS/BVDGS -60V Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage TO-236AB (SOT-23) 203 C/W (min) 10Ω -50mA GATE -55 C to +150OC Typical Thermal Resistance θja (max) SOURCE O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Package ID(ON) DRAIN ±20V Operating and storage temperature RDS(ON) Pin Configuration Absolute Maximum Ratings Doc.# DSFP-TP0610T C081313 Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. TO-236AB (SOT-23) Product Marking T50W W = Code for week sealed = “Green” Packaging Package may or may not include the following marks: Si or O TO-236AB (SOT-23) Supertex inc. www.supertex.com TP0610T Thermal Characteristics ID Package (continuous)† ID Power Dissipation (pulsed) @TA = 25OC -120mA -400mA 0.36W TO-236AB (SOT-23) IDR† IDRM -120mA -400mA Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -60 - - V VGS = 0V, ID = -10μA VGS(th) Gate threshold voltage -1.0 - -2.4 V VGS = VDS, ID= -1.0mA Change in VGS(th) with temperature - - 6.5 mV/OC VGS = VDS, ID= -1.0mA IGSS Gate body leakage - - ±10 nA VGS = ± 20V, VDS = 0V - -1.0 IDSS Zero gate voltage drain current - ID(ON) On-state drain current ∆VGS(th) RDS(ON) ∆RDS(ON) -50 - 25 - 10 1.0 %/ C VGS = -10V, ID = -200mA mmho VDS = -10V, ID = -100mA Static drain-to-source on-state resistance - Change in RDS(ON) with temperature - - 60 - - - - 60 COSS Common source output capacitance - - 30 CRSS Reverse transfer capacitance - - 10 td(ON) Turn-on delay time - - 10 Rise time - - 15 Turn-off delay time - - 15 Fall time - - 20 Diode forward voltage drop - - Reverse recovery time - 400 trr VGS = -4.5V, VDS = -10V - Input capacitance VSD mA - Forward transconductance tf VDS = 0.8 Max Rating, VGS = 0V, TA = 125°C -200 GFS td(OFF) VGS = 0V, VDS = Max Rating μA - CISS tr Conditions Ω O VGS = -4.5V, ID = -25mA VGS = -10V, ID = -200mA pF VGS = 0V, VDS = -25V, f = 1.0 MHz ns VDD = -25V, ID = -180mA, RGEN = 25Ω -2.0 V VGS = 0V, ISD = -120mA - ns VGS = 0V, ISD = -400mA Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% t(ON) td(ON) 0V OUTPUT VDD Doc.# DSFP-TP0610T C081313 tr td(OFF) 90% 10% RGEN 90% t(OFF) D.U.T. tf INPUT OUTPUT RL 90% 10% 2 VDD Supertex inc. www.supertex.com TP0610T Typical Performance Curves On-Resistance vs. Drain Current BVDSS Variation with Temperature 15 1.1 VGS = -5.0V RDS(ON) (ohms) BVDSS (normalized) 12 1.0 VGS = -10V 9.0 6.0 3.0 0 50 100 0 150 0 -0.8 -1.6 -5.0 -3.2 -4.0 Tj ( C) Transfer Characteristics V(th) and RDS Variation with Temperature 2.0 VDS = -25V 1.4 -3.0 VGS(th) (normalized) -4.0 ID (amperes) -2.4 ID (amperes) O TA = -55OC -2.0 25OC 1.6 RDS(ON) @ -10V, -7.5A 1.2 1.2 1.0 0.8 V(th) @ -1.0mA 0.8 -1.0 0.4 125OC 0 RDS(ON) (normalized) 0.9 -50 0 -2.0 -4.0 -6.0 -8.0 0.6 -50 -10 0 50 VGS (volts) 0 150 100 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 200 f = 1MHz VDS = -10V -8.0 VGS (volts) C (picofarads) 150 100 CISS 50 200 pF -6.0 VDS = -40V -4.0 -2.0 COSS CRSS 0 0 -10 -20 -30 75 pF 0 -40 VDS (volts) Doc.# DSFP-TP0610T C081313 0 0.5 1.0 1.5 2.0 2.5 QG (nanocoulombs) 3 Supertex inc. www.supertex.com TP0610T Typical Performance Curves (cont.) Output Characteristics -5.0 -4.0 -4.0 ID (amperes) ID (ampere) Saturation Characteristics -5.0 -3.0 VGS = -10V -9V -2.0 -3.0 VGS = -10V -9V -2.0 -8V -7V -1.0 0 -1.0 -6V -5V -4V -5V -4V 0 -10 -20 -30 -40 -8V -7V -6V 0 0 -50 -2.0 -4.0 Transconductance vs. Drain Current -10 2.0. VDS = -25V TA = -55OC 0.5 0.4 GFS (siemens) -8.0 Power Dissipation vs. Case Temperature TA = 25OC 0.3 PD (watts) 0.6 -6.0 VDS (volts) VDS (volts) TA = -150 C O 1.0 TO-92 0.2 0.1 0 0 -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 0 -3.2 0 25 50 ID (amperes) Maximum Rated Safe Operating Area 1.0 -10 Thermal Resistance (normalized) ID (amperes) TC = 25OC -1.0 TO-92 (DC) -0.1 -0.01 75 100 125 150 TC (OC) Thermal Response Characteristics 0.8 0.6 0.4 0.2 TO-92 PD = 1.0W TC = 25OC 0 -1.0 Doc.# DSFP-TP0610T C081313 -10 VDS (volts) -100 -1000 0.001 0.01 0.1 1.0 10 tp (seconds) 4 Supertex inc. www.supertex.com TP0610T 3-Lead TO-236AB (SOT-23) Package Outline (T) 2.90x1.30mm body, 1.12mm height (max), 1.90mm pitch D 3 E1 E Gauge Plane 0.25 1 e b e1 Seating Plane L L1 2 View B Top View View B A A A2 Seating Plane A1 Side View Symbol Dimension (mm) View A - A A A A1 A2 b D E E1 MIN 0.89 0.01 0.88 0.30 2.80 2.10 1.20 NOM - - 0.95 - 2.90 - 1.30 MAX 1.12 0.10 1.02 0.50 3.04 2.64 1.40 e e1 0.95 BSC 1.90 BSC L 0.20† 0.50 0.60 L1 0.54 REF θ 0O 8O JEDEC Registration TO-236, Variation AB, Issue H, Jan. 1999. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO236ABK1, Version C041309. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-TP0610T C081313 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com