TP2535 DATA SHEET (06/27/2014) DOWNLOAD

Supertex inc.
TP2535
P-Channel Enhancement-Mode
Vertical DMOS FET
Features
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General Description
Low threshold (-2.4V max.)
High input impedance
Low input capacitance (60pF typical)
Fast switching speeds
Low on-resistance
Free from secondary breakdown
Low input and output leakage
This low threshold, enhancement-mode (normally-off)
transistor utilizes a vertical DMOS structure and Supertex’s
well-proven, silicon-gate manufacturing process. This
combination produces a device with the power handling
capabilities of bipolar transistors and the high input impedance
and positive temperature coefficient inherent in MOS devices.
Characteristic of all MOS structures, this device is free
from thermal runaway and thermally-induced secondary
breakdown.
Applications
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Logic level interfaces - ideal for TTL and CMOS
Solid state relays
Battery operated systems
Photo voltaic drives
Analog switches
General purpose line drivers
Telecom switches
Ordering Information
Part Number
TP2535N3-G
Product Summary
Package Option
Packing
3-Lead TO-92
1000/Bag
TP2535N3-G P002
TP2535N3-G P003
TP2535N3-G P005
Supertex’s vertical DMOS FETs are ideally suited to a wide
range of switching and amplifying applications where very
low threshold voltage, high breakdown voltage, high input
impedance, low input capacitance, and fast switching speeds
are desired.
3-Lead TO-92
2000/Reel
BVDSS/BVDGS
-350V
RDS(ON)
ID(ON)
(max)
(min)
25Ω
-2.4A
VGS(th)
(max)
-0.4V
Pin Configuration
TP2535N3-G P013
TP2535N3-G P014
DRAIN
SOURCE
-G denotes a lead (Pb)-free / RoHS compliant package.
Contact factory for Wafer / Die availablity.
Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant.
TO-92
Absolute Maximum Ratings
Parameter
Value
Drain-to-source voltage
BVDSS
Drain-to-gate voltage
BVDGS
Gate-to-source voltage
±20V
Operating and storage temperature
-55OC to +150OC
Absolute Maximum Ratings are those values beyond which damage to the device
may occur. Functional operation under these conditions is not implied. Continuous
operation of the device at the absolute rating level may affect device reliability. All
voltages are referenced to device ground.
Doc.# DSFP-TP2535
B081613
GATE
Product Marking
SiTP
2 5 3 5
YYWW
YY = Year Sealed
WW = Week Sealed
= “Green” Packaging
Package may or may not include the following marks: Si or
TO-92
Typical Thermal Resistance
Package
θja
TO-92
132OC/W
Supertex inc.
www.supertex.com
TP2535
Thermal Characteristics
ID
Package
(continuous)†
ID
Power Dissipation
(pulsed)
@TA = 25OC
-86mA
-600mA
0.74W
TO-92
IDR†
IDRM
-86mA
-600mA
Notes:
† ID (continuous) is limited by max rated Tj .
Electrical Characteristics (T = 25°C unless otherwise specified)
A
Sym
Parameter
Min
Typ
Max
Units
BVDSS
Drain-to-source breakdown voltage
-350
-
-
V
VGS = 0V, ID = -2.0mA
VGS(th)
Gate threshold voltage
-1.0
-
-2.4
V
VGS = VDS, ID= -1.0mA
Change in VGS(th) with temperature
-
-
4.8
O
mV/ C
VGS = VDS, ID= -1.0mA
Gate body leakage
-
-
-100
nA
VGS = ± 20V, VDS = 0V
-
-10
μA
VGS = 0V, VDS = Max Rating
-
-1.0
mA
VDS = 0.8 Max Rating,
VGS = 0V, TA = 125°C
-0.2
-0.3
-
-0.4
-1.1
-
20
30
19
25
∆VGS(th)
IGSS
IDSS
Zero gate voltage drain current
ID(ON)
On-state drain current
RDS(ON)
∆RDS(ON)
-
-
-
0.75
%/ C
VGS = -10V, ID = -100mA
100
175
-
mmho
VDS = -25V, ID = -100mA
Input capacitance
-
60
125
COSS
Common source output capacitance
-
20
70
CRSS
Reverse transfer capacitance
-
10
25
td(ON)
Turn-on delay time
-
-
10
Rise time
-
-
10
Turn-off delay time
-
-
20
Fall time
-
-
13
Diode forward voltage drop
-
-
Reverse recovery time
-
300
tf
VSD
trr
VGS = -4.5V, ID = -100mA
Change in RDS(ON) with temperature
CISS
td(OFF)
VGS = -10V, VDS = -25V
-
Forward transconductance
Ω
VGS = -4.5V, VDS = -25V
Static drain-to-source on-state resistance
GFS
tr
A
Conditions
O
VGS = -10V, ID = -100mA
pF
VGS = 0V,
VDS = -25V,
f = 1.0 MHz
ns
VDD = -25V,
ID = -0.4A,
RGEN = 25Ω
-1.8
V
VGS = 0V, ISD = -100mA
-
ns
VGS = 0V, ISD = -100mA
Notes:
1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.)
2. All A.C. parameters sample tested.
Switching Waveforms and Test Circuit
0V
INPUT
-10V
Pulse
Generator
10%
td(ON)
0V
OUTPUT
VDD
Doc.# DSFP-TP2535
B081613
tr
td(OFF)
90%
10%
RGEN
90%
t(OFF)
t(ON)
D.U.T.
tf
INPUT
OUTPUT
RL
90%
10%
2
VDD
Supertex inc.
www.supertex.com
TP2535
Typical Performance Curves
BVDSS Variation with Temperature
1.1
On-Resistance vs. Drain Current
100
VGS = -4.5V
RDS(ON) (ohms)
BVDSS (normalized)
80
1.0
VGS = -10V
60
40
20
0
50
100
0
150
0
-0.4
-0.8
1.2
VGS(th) (normalized)
ID (amperes)
TA = -55OC
-1.2
25OC
-0.8
RDS(ON) @ -10V, -0.1A
1.1
125OC
-2.0
-4.0
-6.0
-8.0
2.0
1.5
1.0
1.0
0.9
V(th)@ -1mA
-0.4
0
-2.0
2.5
VDS = -25OC
-1.6
0
-1.6
V(th) and RDS Variation with Temperature
Transfer Characteristics
-2.0
-1.2
ID (amperes)
Tj (OC)
RDS(ON) (normalized)
0.9
-50
0.5
0.8
-10
-50
0
50
VGS (volts)
100
0
150
Tj (OC)
Capacitance vs. Drain-to-Source Voltage
Gate Drive Dynamic Characteristics
-10
200
f = 1MHz
VDS = -10V
-8.0
VGS (volts)
C (picofarads)
150
100
-6.0
VDS = -40V
-4.0
190 pF
CISS
50
-2.0
0
CRSS
0
-10
-20
-30
0
0
-40
0.4
0.8
1.2
1.6
2.0
QG (nanocoulombs)
VDS (volts)
Doc.# DSFP-TP2535
B081613
60pF
COSS
3
Supertex inc.
www.supertex.com
TP2535
Typical Performance Curves (cont.)
Saturation Characteristics
-1.0
-1.6
-0.8
VGS = -10V
-1.2
ID (amperes)
ID (amperes)
Output Characteristics
-2.0
-8V
-0.8
-6V
-0.4
VGS = -10V
-8V
-0.6
-6V
-0.4
-0.2
-4V
0
-4V
0
-10
-20
-30
-40
0
-50
0
-2.0
-4.0
-6.0
-8.0
-10
VDS (volts)
VDS (volts)
Transconductance vs. Drain Current
Power Dissipation vs. Ambient Temperature
0.5
2.0
VDS = -25V
0.3
PD (watts)
GFS (siemens)
0.4
TA = -55OC
0.2
1.0
25OC
TO-92
125OC
0.1
0
0
-0.4
-0.8
-1.2
-1.6
0
-2.0
0
25
50
75
100
125
150
TA (OC)
ID (amperes)
Maximum Rated Safe Operating Area
Thermal Response Characteristics
-10
1.0
ID (amperes)
-1.0
-0.1
Thermal Resistance (normalized)
TA = 25OC
TO-92 (pulsed)
TO-92 (DC)
-0.01
-1.0
-10
-100
0.6
0.4
0.2
0
0.001
-1000
VDS (volts)
Doc.# DSFP-TP2535
B081613
0.8
TO-92
TC = 25OC
PD = 1.0W
0.01
0.1
1.0
10
tp(seconds)
4
Supertex inc.
www.supertex.com
TP2535
3-Lead TO-92 Package Outline (N3)
D
A
Seating
Plane
1
2
3
L
c
b
e1
e
Side View
Front View
E1
E
1
3
2
Bottom View
Symbol
Dimensions
(inches)
A
b
c
MIN
.170
.014
NOM
-
-
MAX
.210
.022
†
.014
†
D
E
E1
e
e1
L
.175
.125
.080
.095
.045
.500
-
-
-
-
-
-
.205
.165
.105
.105
.055
.610*
†
.022
†
JEDEC Registration TO-92.
* This dimension is not specified in the JEDEC drawing.
† This dimension differs from the JEDEC drawing.
Drawings not to scale.
Supertex Doc.#: DSPD-3TO92N3, Version E041009.
(The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline
information go to http://www.supertex.com/packaging.html.)
Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives
an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability
to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and
specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com)
Supertex inc.
©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited.
Doc.# DSFP-TP2535
B081613
5
1235 Bordeaux Drive, Sunnyvale, CA 94089
Tel: 408-222-8888
www.supertex.com