Supertex inc. VP0109 P-Channel Enhancement-Mode Vertical DMOS FETs General Description Features ►► ►► ►► ►► ►► ►► ►► This enhancement-mode (normally-off) transistor utilizes a vertical DMOS structure and Supertex’s well-proven, silicon-gate manufacturing process. This combination produces a device with the power handling capabilities of bipolar transistors and the high input impedance and positive temperature coefficient inherent in MOS devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. Free from secondary breakdown Low power drive requirement Ease of paralleling Low CISS and fast switching speeds Excellent thermal stability Integral source-drain diode High input impedance and high gain Applications ►► ►► ►► ►► ►► ►► Motor controls Converters Amplifiers Switches Power supply circuits Drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) Ordering Information Part Number Package Option Packing VP0109N3-G VP0109N3-G P002 TO-92 1000/Bag Supertex’s vertical DMOS FETs are ideally suited to a wide range of switching and amplifying applications where very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. Product Summary BVDSS/BVDGS -90V RDS(ON) ID(ON) (max) (min) 8.0Ω -500mA VP0109N3-G P003 VP0109N3-G P005 TO-92 Pin Configuration 2000/Reel VP0109N3-G P013 VP0109N3-G P014 -G denotes a lead (Pb)-free / RoHS compliant package. Contact factory for Wafer / Die availablity. Devices in Wafer / Die form are lead (Pb)-free / RoHS compliant. DRAIN SOURCE Absolute Maximum Ratings Parameter Value Drain-to-source voltage BVDSS Drain-to-gate voltage BVDGS Gate-to-source voltage ±20V Operating and storage temperature -55 C to +150 C O O Absolute Maximum Ratings are those values beyond which damage to the device may occur. Functional operation under these conditions is not implied. Continuous operation of the device at the absolute rating level may affect device reliability. All voltages are referenced to device ground. Typical Thermal Resistance Package θja TO-92 132OC/W Doc.# DSFP-VP0109 C082313 GATE TO-92 Product Marking SiVP 0 1 0 9 YYWW YY = Year Sealed WW = Week Sealed = “Green” Packaging Package may or may not include the following marks: Si or TO-92 Supertex inc. www.supertex.com VP0109 Thermal Characteristics ID Package (continuous)† (pulsed) ID Power Dissipation @TC = 25OC IDR† IDRM -250mA -800mA 1.0W -250mA -800A TO-92 Notes: † ID (continuous) is limited by max rated Tj . Electrical Characteristics (T = 25°C unless otherwise specified) A Sym Parameter Min Typ Max Units BVDSS Drain-to-source breakdown voltage -90 - - V VGS = 0V, ID = -1.0mA VGS(th) Gate threshold voltage -1.5 - -3.5 V VGS = VDS, ID = -1.0mA Change in VGS(th) with temperature - 5.8 6.5 mV/ C VGS = VDS, ID = -1.0mA Gate body leakage current - -1.0 -100 nA VGS = ±20V, VDS = 0V - - -10 µA VGS = 0V, VDS = Max Rating - - -1.0 mA VDS = 0.8 Max Rating, VGS = 0V, TA = 125OC -0.15 -0.25 - -0.5 -1.2 - ΔVGS(th) IGSS O Conditions IDSS Zero gate voltage drain current ID(ON) On-state drain current RDS(ON) Static drain-to-source on-state resistance - 11 15 - 6.0 8.0 Change in RDS(ON) with temperature - 0.55 1.0 %/OC VGS = -10V, ID = -500mA 150 190 - mmho VDS = -25V, ID = -500mA ΔRDS(ON) A GFS Forward transconductance CISS Input capacitance - 45 60 COSS Common source output capacitance - 22 30 CRSS Reverse transfer capacitance - 3.0 8.0 td(ON) Turn-on delay time - 4.0 6.0 Rise time - 3.0 10 Turn-off delay time - 8.0 12 Fall time - 4.0 10 Diode forward voltage drop - -1.2 Reverse recovery time - 400 tr td(OFF) tf VSD trr Ω VGS = -5.0V, VDS = -25V VGS = -10V, VDS = -25V VGS = -5.0V, ID = -100mA VGS = -10V, ID = -500mA pF VGS = 0V, VDS = -25V, f = 1.0MHz ns VDD = -25V, ID = -500mA, RGEN = 25Ω -2.0 V VGS = 0V, ISD = -1.0A - ns VGS = 0V, ISD = -1.0A Notes: 1. All D.C. parameters 100% tested at 25OC unless otherwise stated. (Pulse test: 300µs pulse, 2% duty cycle.) 2. All A.C. parameters sample tested. Switching Waveforms and Test Circuit 0V INPUT -10V Pulse Generator 10% td(ON) 0V OUTPUT VDD Doc.# DSFP-VP0109 C082313 tr td(OFF) 90% 10% RGEN 90% t(OFF) t(ON) D.U.T. tf INPUT OUTPUT RL 90% 10% 2 VDD Supertex inc. www.supertex.com VP0109 Typical Performance Curves 50 1.06 40 RDS(ON) (ohms) 1.02 0.98 On-Resistance vs. Drain Current VGS = -5.0V VGS = -10V 30 20 10 0.94 0.90 -50 0 50 100 0 150 0 -0.3 -0.6 V Transfer Characteristics (th) -1.6 TA = -55OC VDS = -25V -0.6 TA = 125 C O -0.4 -0.2 -1.6 RDS(ON) @ 10V, -0.5A RDS(ON) @ -5V, -0.1A -1.4 -1.2 -1.2 -1.0 -1.0 -0.8 V(th) @ -1.0mA 0 -1.5 and RDS Variation with Temperature -1.4 TA = 25OC VGS(th) (normalized) ID (amperes) -0.8 -1.2 ID (amperes) Tj (OC) -1.0 -0.9 RDS(ON) (normalized) BVDSS (normalized) BVDSS Variation with Temperature 1.10 0 -2 -4 -6 -8 0.6 -50 -10 0 50 VGS (volts) 100 -0.8 150 Tj (OC) Capacitance vs. Drain-to-Source Voltage Gate Drive Dynamic Characteristics -10 100 f = 1MHz VDS = -10V -8 VGS (volts) C (picofarads) 75 50 CISS 25 70pf -6 70pf -4 45pf -2 COSS VDS = -40V CRSS 0 0 -10 -20 -30 0 -40 Doc.# DSFP-VP0109 C082313 0 0.2 0.4 0.6 0.8 1.0 QG (nanocoulombs) VDS (volts) 3 Supertex inc. www.supertex.com VP0109 Typical Performance Curves (cont.) Output Characteristics -2.0 VGS = -10V -9V -0.8 -1.6 VGS = -10V -1.2 ID (amperes) ID (amperes) Saturation Characteristics -1.0 -9V -8V -0.8 -8V -0.6 -7V -0.4 -7V -6V -6V -0.4 -0.2 -5V -4V 0 250 -10 -20 -30 -40 -4V 0 -2 -4 -6 -8 -10 VDS (volts) VDS (volts) Transconductance vs. Drain Current Power Dissipation vs. Case Temperature VDS = -25V 2.0 TA = -55OC 200 GFS (millisiemens) 0 TA = 25OC TA = 125OC 150 PD (watts) 0 -5V 100 TO-92 1.0 50 0 0 -0.2 -0.4 -0.6 -0.8 0 -1.0 0 25 50 Maximum Rated Safe Operating Area 1.0 Thermal Resistance (normalized) ID (amperes) -10 -1.0 -0.1 -0.01 -0.1 TO-92 (DC) TC = 25OC -1.0 -10 100 125 150 Thermal Response Characteristics 0.8 0.6 0.4 TO-92 PD = 1W TC = 25OC 0.2 0 -100 VDS (volts) Doc.# DSFP-VP0109 C082313 75 TC (OC) ID (amperes) 0.001 0.01 0.1 1.0 10 tP (seconds) 4 Supertex inc. www.supertex.com VP0109 3-Lead TO-92 Package Outline (N3) D A Seating Plane 1 2 3 L c b e1 e Side View Front View E1 E 1 3 2 Bottom View Symbol Dimensions (inches) A b c MIN .170 .014 NOM - - MAX .210 .022 † .014 † D E E1 e e1 L .175 .125 .080 .095 .045 .500 - - - - - - .205 .165 .105 .105 .055 .610* † .022 † JEDEC Registration TO-92. * This dimension is not specified in the JEDEC drawing. † This dimension differs from the JEDEC drawing. Drawings not to scale. Supertex Doc.#: DSPD-3TO92N3, Version E041009. (The package drawing(s) in this data sheet may not reflect the most current specifications. For the latest package outline information go to http://www.supertex.com/packaging.html.) Supertex inc. does not recommend the use of its products in life support applications, and will not knowingly sell them for use in such applications unless it receives an adequate “product liability indemnification insurance agreement.” Supertex inc. does not assume responsibility for use of devices described, and limits its liability to the replacement of the devices determined defective due to workmanship. No responsibility is assumed for possible omissions and inaccuracies. Circuitry and specifications are subject to change without notice. For the latest product specifications refer to the Supertex inc. (website: http//www.supertex.com) Supertex inc. ©2013 Supertex inc. All rights reserved. Unauthorized use or reproduction is prohibited. Doc.# DSFP-VP0109 C082313 5 1235 Bordeaux Drive, Sunnyvale, CA 94089 Tel: 408-222-8888 www.supertex.com