FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16932 Generic Copy Issue Date: 15-Nov-2012 TITLE: Qualification of T1 FET die used in NCP367 at UMC Wafer Fab PROPOSED FIRST SHIP DATE: 15-Feb-2013 AFFECTED CHANGE CATEGORY(S): Silicon Fabrication Site FOR ANY QUESTIONS CONCERNING THIS NOTIFICATION: Contact your local ON Semiconductor Sales Office or [email protected] SAMPLES: Contact your local ON Semiconductor Sales Office or [email protected] ADDITIONAL RELIABILITY DATA: Available Contact your local ON Semiconductor Sales Office or [email protected]. NOTIFICATION TYPE: Final Product/Process Change Notification (FPCN) Final change notification sent to customers. implementation of the change. FPCNs are issued at least 90 days prior to ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. DESCRIPTION AND PURPOSE: ON Semiconductor is pleased to announce the qualification for the FET die, utilized in the NCP367 family of devices, in United Microelectronics Corp (UMC) Wafer Fab. The FET for the NCP367 is currently qualified at ON Semiconductor’s Aizu wafer fab facility located in Aizu, Japan and is now qualified at UMC’s wafer fabrication facility located in Taiwan. Upon expiration (or approval) of this Final PCN, devices may be supplied by either wafer fab. The UMC Wafer Fab is ISOTS16949:2009 certified. It has already been qualified and utilized by ON Semicondutor for their products on High Cell Density (HD3e) and Trench (T2) MOSFET technology silicon platforms. More recently ON Semi has qualified UMC’s Trench (T1) MOSFET platform from which the FET for the NCP367 is sourced. No circuit design changes have been made. Device performance is the same for Aizu and UMC-sourced devices. The NCP367 family will continue to be assembled and tested in existing, qualified locations. No changes to packaging will occur as a result of this fab qualification. Issue Date: 15-Nov-2012 Rev. 06-Jan-2010 Page 1 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16932 RELIABILITY DATA SUMMARY: Reliability Test Results: The UMC-sourced NCP367 devices have been qualified based on the following Reliability results: Test HTRB Name High Temp Reverse Bias Test Conditions TA = 150°C for 1008 hours, Vdss = 80% of max specified End Point Req’s Test Results Read Point High Temp Gate Bias TA = 150°C for 1008 hours, Vgss=100% of max specified IOLPC MSL 1 Preconditionin IR @ 260 °C g Ta=+25°C, delta Intermittent Tj=100°C OL-PC On/off = 2 min Temperature TC-PC Cycling - PC -55°C to +150°C Highly Accelerated HAST Stress Test + - PC Preconditionin g Temp= +130°C, RH=85% for 96 hrs. Vdss=80% of max specified c = 0, Room Post PC Electrical 7500 Hrs 15000 Hrs Post PC c = 0, Room Electrical 500 Cyc Post PC c = 0, Room Electrical 96 Hrs c = 0, Room BPS BS Resistance to Solder Heat Bond Pull Strength Tdwell=10 sec @ 260°C Condition C Bond Shear Characterizatio Per 48A n Issue Date: 15-Nov-2012 (rej/ ss) (rej/ ss) (rej/ ss) 2N7002N\ UMC 2N7002N\ UMC 2N7002N Aizu 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/82 0/82 0/82 0/82 0/82 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/15 0/15 0/15 0/15 0/15 0/15 0/15 0/30 0/30 0/30 0/30 0/30 0/30 0/30 0/10 0/10 0/10 0/10 0/10 0/10 0/10 0/30 0/30 0/30 0/30 0/30 0/30 0/30 Post PC Electrical 96 Hrs RSH (rej/ ss) 2N7002N UMC c = 0, Room 1000 Cyc 121°C/100% AC-PC Autoclave-PC RH/15psig (rej/ ss) NTGS5120P UMC c = 0, Room Initial 504 Hrs 1008 Hrs 1500 Hrs 2000 Hrs 2500 Hrs 3000 Hrs PC (rej/ ss) NTGS5120P UMC c = 0, Room Initial 504 Hrs 1008 Hrs HTGB (rej/ ss) NTGS5120P UMC N/A Min Cpk 1.33 Min Cpk 1.33 Rev. 06-Jan-2010 Page 2 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16932 Test Name High Temp HTRB Reverse Bias Test Conditions TA = 150°C for 1008 hours, Vdss = 80% of max specified End Point Req’s Test Results (rej/ ss) (rej/ ss) (rej/ ss) (rej/ ss) (rej/ ss) Read Point NTHS4166N NTHS4166N NTHS4166N NTLJD4116N NTLJD4116N c = 0, Room High Temp Gate Bias TA = 150°C for 1008 hours, Vgss=100% of max specified c = 0, Room IOLPC TC-PC MSL 1 Preconditionin IR @ 260 °C g Ta=+25°C, delta Intermittent Tj=100°C OL-PC On/off = 2 min Temperature Cycling - PC -55°C to +150°C Post PC Electrical c = 0, Room 7500 Hrs 15000 Hrs Post PC Electrical 500 Cyc c = 0, Room AC-PC Autoclave-PC 121°C/100% RH/15psig c = 0, Room Highly Accelerated HAST Stress Test + - PC Preconditionin g Temp= +130°C, RH=85% for 96 hrs. Vdss=80% of max specified Post PC Electrical 96 Hrs BS Resistance to Tdwell=10 sec @ 260°C N/A Solder Heat Bond Pull Condition C Min Cpk 1.33 Strength Bond Shear Min Cpk 1.33 Characterizatio Per 48A n Issue Date: 15-Nov-2012 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/15 0/15 0/84 0/15 0/30 0/30 0/30 0/10 0/10 0/10 0/30 0/30 0/30 UMC 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 0/84 Post PC Electrical c = 0, Room 96 Hrs BPS 0/84 0/84 0/84 UMC c = 0, Room 1000 Cyc RSH Aizu Initial0/80 504 Hrs 1008 Hrs PC UMC Initial 504 Hrs 1008 Hrs HTGB UMC (rej/ ss) NTLJD4116N UMC Rev. 06-Jan-2010 Page 3 of 4 FINAL PRODUCT/PROCESS CHANGE NOTIFICATION #16932 ELECTRICAL CHARACTERISTIC SUMMARY: Electrical characterization test data has been obtained on UMC sourced NCP367 material. No significant changes in part performance as compared to the existing Aizu-sourced product were observed. Cpk’s of all critical parameters are greater than 1.67. Data may be provided upon request. CHANGED PART IDENTIFICATION: Devices with date codes of 2013 work week 7 or later may be sourced from either wafer UMC or Aizu fab. List of affected General Parts: NCP367DPMUEETBG NCP367OPMUEOTBG NCP367DPMUELTBG NCP367DPMUECTBG Issue Date: 15-Nov-2012 Rev. 06-Jan-2010 Page 4 of 4