Rev. 2.0 BSO 612 CV G SIPMOS Small-Signal-Transistor Product Summary Features · Dual N- and P -Channel · Enhancement mode · Avalanche rated Drain source voltage VDS Drain-Source on-state RDS(on) N P 60 -60 V 0.12 0.3 W 3 -2 A resistance Continuous drain current ID · Pb-free lead plating;RoHS compliant Type Package Marking BSO 612 CV PG-DSO-8 612CV Maximum Ratings,at T j = 25 °C, unless otherwise specified Parameter Symbol Value N Unit P ID Continuous drain current A T A = 25 °C 3 -2 T A = 70 °C 2.4 -1.6 12 -8 I D puls Pulsed drain current T A = 25 °C EAS Avalanche energy, single pulse I D = 3 A, V DD = 25 V, R GS = 25 W I D = -2 A, VDD = -25 V, R GS = 25 W Avalanche energy, periodic limited by Tjmax Reverse diode dv/dt, T jmax = 150 °C EAR mJ 47 - - 70 0.2 0.2 dv/dt kV/µs I S = 3 A, V DS = 48 V, di/dt = 200 A/µs 6 - I S = -2 A, V DS = -48 V, di/dt = -200 A/µs - 6 Gate source voltage VGS ±20 ±20 V Power dissipation Ptot 2 2 W T A = 25 °C T j , Tstg Operating and storage temperature IEC climatic category; DIN IEC 68-1 -55...+150 °C 55/150/56 Page 1 2006-08-25 Rev. 2.0 BSO 612 CV G Termal Characteristics Parameter Symbol Values Unit min. typ. max. - - 40 - - 40 N - - 110 @ 6 cm 2 cooling area 1) ; t £ 10 sec. N - - 62.5 @ min. footprint; t P - - 70 P - - 62.5 Dynamic Characteristics Thermal resistance, junction - soldering point ( Pin 4) N RthJS P RthJA SMD version, device on PCB: @ min. footprint; t £ £ K/W 10 sec. 10 sec. @ 6 cm 2 cooling area 1) ; t £ 10 sec. Static Characteristics, at Tj = 25 °C, unless otherwise specified V(BR)DSS Drain- source breakdown voltage V VGS = 0 V, ID = 250 µA N 60 - - VGS = 0 V, ID = -250 µA P -60 - - Gate threshold voltage, VGS = VDS ID = 20 µA VGS(th) N 2.1 3 4 ID = -450 µA P -2.1 -3 -4 IDSS Zero gate voltage drain current µA VDS = 60 V, VGS = 0 V, Tj = 25 °C N - 0.1 1 VDS = 60 V, VGS = 0 V, Tj = 125 °C N - 10 100 VDS = -60 V, VGS = 0 V, Tj = 25 °C P - -0.1 -1 VDS = -60 V, VGS = 0 V, Tj = 125 °C P - -10 -100 IGSS Gate-source leakage current nA VGS = 20 V, VDS = 0 V N - 10 100 VGS = -20 V, VDS = 0 V P - -10 -100 RDS(on) Drain-source on-state resistance W VGS = 10 V, ID = 3 A N - 0.09 0.12 VGS = -10 V , ID = -2 A P - 0.22 0.3 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm 2 (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2006-08-25 Rev. 2.0 BSO 612 CV G Electrical Characteristics , at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics gfs Transconductance S VDS³2 * I D * R DS(on)max, ID = 3 A N 2 4 - VVDS³2 * I D * R DS(on)max, ID = -2 A P 1.2 2.4 - Ciss Input capacitance pF VGS = 0 V, V DS = 25 V, f = 1 MHz N - 275 340 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 320 400 Coss Output capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 90 115 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 105 130 Crss Reverse transfer capacitance VGS = 0 V, V DS = 25 V, f = 1 MHz N - 50 65 VGS = 0 V, V DS = -25 V, f = 1 MHz P - 40 50 td(on) Turn-on delay time ns VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W N - 12 18 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W P - 15 23 tr Rise time VDD = 30 V, VGS = 10 V, ID = 3 A, R G = 33 W N - 35 55 VDD = -30 V, V GS = -10 V, ID = -2 A, RG = 27 W P - 60 90 td(off) Turn-off delay time VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W N - 25 40 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W P - 145 220 tf Fall time VDD = 30 V, VGS = 10 V, ID = 3 A , R G = 33 W N - 30 45 VDD = -30 V, V GS = -10 V, ID = -2 A , R G = 27 W P - 95 140 Page 3 2006-08-25 Rev. 2.0 BSO 612 CV G Electrical Characteristics, at T j = 25 °C, unless otherwise specified Parameter Symbol Values min. typ. Unit max. Characteristics Q gs Gate to source charge nC VDD = 48 V, ID = 3 A N - 1 1.5 VDD = -48 V, ID = -2 A P - 2 3 Q gd Gate to drain charge VDD = 48 V, ID = 3 A N - 5.5 8.3 VDD = -48 V, ID = -2 A P - 4.5 6.8 Qg Gate charge total VDD = 48 V, ID = 3 A, VGS = 0 to 10V N - 10.3 15.5 VDD = -48 V, ID = -2 A, VGS = 0 to -10V P - 10.5 16 V(plateau) Gate plateau voltage V VDD = 48 V, ID = 3 A N - 5 - VDD = -48 V, ID = -2 A P - -4 - Inverse diode continuous forward current N IS - - 3 T A = 25 °C P - - -2 Inverse diode direct current,pulsed N ISM - - 12 T A = 25 °C P - - -8 Reverse Diode VSD Inverse diode forward voltage V VGS = 0 V, I F = I S N - 0.9 1.2 VGS = 0 V, I F = I S P - -0.9 -1.2 trr Reverse recovery time ns VR = 30 V, IF=l S, di F/dt = 100 A/µs N - 55 85 VR = -30 V, IF=l S , diF/dt = -100 A/µs P - 55 85 Qrr Reverse recovery charge nC VR = 30 V, IF=l S , diF/dt = 100 A/µs N - 90 135 VR = -30 V, I F=lS, diF/dt = -100 A/µs P - 65 100 Page 4 A 2006-08-25 Rev. 2.0 BSO 612 CV G Power Dissipation (N-Ch.) Power Dissipation (P-Ch.) Ptot = f (TA) Ptot = f (TA ) BSO 612 CV BSO 612 CV 2.2 2.2 W 1.8 1.8 1.6 1.6 Ptot Ptot W 1.4 1.4 1.2 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 20 40 60 80 100 120 TA °C 160 TA Drain current (N-Ch.) Drain current (P-Ch.) I D = f (T A) ID = f (TA) parameter: VGS³ 10 V parameter: VGS ³ -10 V BSO 612 CV BSO 612 CV 3.2 -2.2 A A -1.8 -1.6 2.0 ID ID 2.4 -1.4 -1.2 1.6 -1.0 1.2 -0.8 -0.6 0.8 -0.4 0.4 -0.2 0.0 0 20 40 60 80 100 120 °C 0.0 0 160 TA 20 40 60 80 100 120 °C 160 TA Page 5 2006-08-25 Rev. 2.0 BSO 612 CV G Safe operating area (N-Ch.) Safe operating area (P-Ch.) I D = f ( VDS ) ID = f ( VDS ) parameter : D = 0 , T A = 25 °C parameter : D = 0 , TA = 25 °C 10 2 BSO 612 CV -10 1 BSO 612 CV tp = 200.0µs /I D A S( on V = 1 ms on ) S 100 µs ) -10 0 ID ID RD VD DS ( = R 10 1 DS A tp = 45.0µs /I D 10 ms 1 ms 10 0 10 ms -10 -1 10 -1 DC DC 10 -2 -1 10 10 0 10 1 V 10 -10 -2 -1 -10 2 -10 0 -10 1 V VDS -10 VDS Transient thermal impedance (N-Ch.) Transient thermal impedance (P-Ch.) Z thJC = f(t p) ZthJC = f(tp) parameter : D = tp/T parameter : D = tp /T 10 2 2 BSO 612 CV 10 2 BSO 612 CV K/W K/W Z thJC 10 1 Z thJC 10 1 10 0 10 0 D = 0.50 D = 0.50 0.20 0.20 0.10 0.10 single pulse 10 -1 0.05 0.02 single pulse 0.01 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 0.05 10 -1 0.02 0.01 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 tp s 10 4 tp Page 6 2006-08-25 Rev. 2.0 BSO 612 CV G Typ. output characteristics (N-Ch.) Typ. output characteristics (P-Ch.) I D = f (VDS) ID = f (VDS ) parameter: tp = 80 µs parameter: tp = 80 µs BSO 612 CV 7.5 BSO 612 CV -5.0 Ptot = 2.00W A A VGS [V] a 4.0 h 6.0 5.5 g 5.0 b 4.2 c 4.5 d 4.7 e 4.5 f 4.0 3.5 e 5.0 f 5.2 g 5.5 h 5.7 i 6.0 f VGS [V] a -4.0 e -4.0 -4.2 c -4.5 d -4.7 e -5.0 f -6.0 c -3.0 -2.5 b -2.0 3.0 2.5 d b -3.5 ID i ID Ptot = 2.00W a -1.5 d 2.0 c -1.0 1.5 1.0 b -0.5 a 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 V 5.0 VDS -5.0 VDS Typ. drain-source-on-resistance (N-Ch.) Typ. drain-source-on-resistance (P-Ch.) RDS(on) = f (ID) RDS(on) = f (ID ) parameter: VGS parameter: VGS BSO 612 CV BSO 612 CV 1.0 0.38 W b c d e f W g a b c d 0.32 0.28 RDS(on) RDS(on) 0.8 0.24 0.20 0.7 0.6 0.5 0.16 0.4 h 0.12 f 0.08 0.04 e 0.3 i 0.2 VGS [V] = 0.00 0.0 b 4.2 c 4.5 1.0 d 4.7 e f 5.0 5.2 2.0 g 5.5 3.0 0.1 h i 5.7 6.0 4.0 5.0 A VGS [V] = a b c d e f -4.0 -4.2 -4.5 -4.7 -5.0 -6.0 0.0 0.0 -0.5 -1.0 -1.5 -2.0 -2.5 -3.0 -3.5 -4.0 °C 6.5 ID -5.0 Tj Page 7 2006-08-25 Rev. 2.0 BSO 612 CV G Typ. transfer characteristics (N-Ch.) Typ. transfer characteristics (P-Ch.) parameter: tp = 80 µs I D = f (VGS), V DS ³ 2 x I D x R DS(on)max parameter: tp = 80 µs ID = f (VGS ), VDS ³ 2 x ID x RDS(on)max 10 5.0 A 8 4.0 7 3.5 ID ID A 6 3.0 5 2.5 4 2.0 3 1.5 2 1.0 1 0.5 0 0 1 2 3 4 5 VGS 0.0 0.0 7 1.0 2.0 3.0 4.0 6.0 VGS V V Typ. forward transconductance (N-Ch.) Typ. forward transconductance (P-Ch.) gfs = f(ID); T j = 25 °C gfs = f(ID); Tj = 25 °C parameter: g fs parameter: gfs 4.0 7.0 S S 6.0 5.5 3.0 4.5 gfs gfs 5.0 2.5 4.0 2.0 3.5 3.0 1.5 2.5 2.0 1.0 1.5 1.0 0.5 0.5 0.0 0 1 2 3 4 5 6 7 8 0.0 0.0 A 10 ID -1.0 -2.0 -3.0 -4.0 -6.0 A ID Page 8 2006-08-25 Rev. 2.0 BSO 612 CV G Drain-source on-resistance (N-Ch.) Drain-source on-resistance (P-Ch.) RDS(on) = f (Tj) RDS(on) = f (Tj) parameter : I D = 3 A , VGS = 10 V parameter : ID = -2 A , VGS = -10 V BSO 612 CV BSO 612 CV 0.34 0.80 W W RDS(on) RDS(on) 0.28 0.24 0.20 0.60 0.50 0.40 0.16 98% 0.12 typ 0.30 0.08 0.20 0.04 0.10 0.00 -60 -20 20 98% 60 100 °C 0.00 -60 180 typ -20 20 60 °C 100 Tj 180 Tj Gate threshold voltage (N-Ch.) Gate threshold voltage (P-Ch.) VGS(th) = f (T j) VGS(th) = f (Tj) parameter: VGS = VDS, ID = 20 µA parameter: VGS = VDS , ID = -450 µA 5.0 -5.0 V V 98% 98% -4.0 V GS(th) V GS(th) 4.0 3.5 typ 3.0 2.5 -3.5 typ -3.0 -2.5 2% 2% 2.0 -2.0 1.5 -1.5 1.0 -1.0 0.5 -0.5 0.0 -60 -20 20 60 100 0.0 -60 160 °C Tj Page 9 -20 20 60 100 160 °C Tj 2006-08-25 Rev. 2.0 BSO 612 CV G Typ. capacitances (N-Ch.) Typ. capacitances (P-Ch.) C = f(VDS) C = f(VDS ) parameter: VGS=0 V, f=1 MHz parameter: VGS =0 V, f=1 MHz 10 3 10 3 pF pF Ciss C C Ciss 10 2 10 2 Coss Coss Crss Crss 10 1 0 5 10 15 20 25 VDS 10 1 0 35 -5 -10 -15 -20 -25 V VDS -35 V Forward characteristics of reverse diode Forward characteristics of reverse diode I F = f (VSD), (N-Ch.) IF = f (VSD ), (P-Ch.) parameter: Tj , tp = 80 µs parameter: Tj , tp = 80 µs 10 1 BSO 612 CV -10 1 BSO 612 CV A A IF -10 0 IF 10 0 10 -1 10 -2 0.0 -10 -1 0.4 0.8 Tj = 25 °C typ Tj = 25 °C typ Tj = 150 °C typ Tj = 150 °C typ Tj = 25 °C (98%) Tj = 25 °C (98%) Tj = 150 °C (98%) Tj = 150 °C (98%) 1.2 1.6 2.0 2.4 V 3.0 -10 -2 0.0 VSD -0.4 -0.8 -1.2 -1.6 -2.0 -2.4 V -3.0 VSD Page 10 2006-08-25 Rev. 2.0 BSO 612 CV G Avalanche Energy EAS = f (Tj) (N-Ch.) Avalanche Energy EAS = f (Tj ) parameter: ID = 3 A, VDD = 25 V RGS = 25 W parameter: ID = -2 A, VDD = -25 V RGS = 25 W 50 80 mJ mJ 40 60 E AS E AS 35 30 25 50 40 20 30 15 20 10 10 5 0 25 45 65 85 105 125 0 25 165 °C 45 65 85 105 125 Tj Tj Typ. gate charge (N-Ch.) Typ. gate charge (P-Ch.) VGS = f (QGate) parameter: ID = 3 A VGS = f (QGate) parameter: ID = -2 A BSO 612 CV BSO 612 CV 16 -16 V V -12 VGS 12 VGS 165 °C 10 8 -10 -8 0,2 VDS max 0,8 VDS max 6 -6 4 -4 2 -2 0 0 2 4 6 8 nC 0 0 12 QGate 0,2 VDS max 2 4 6 8 0,8 VDS max 10 12 14 16 nC 19 QGate Page 11 2006-08-25 Rev. 2.0 BSO 612 CV G Drain-source breakdown voltage Drain-source breakdown voltage V(BR)DSS = f (Tj), (N-Ch.) V(BR)DSS = f (Tj ), (P-Ch.) BSO 612 CV BSO 612 CV 72 -72 V 68 V(BR)DSS V(BR)DSS V 66 -68 -66 64 -64 62 -62 60 -60 58 -58 56 -56 54 -60 -20 20 60 100 °C -54 -60 180 Tj -20 20 60 100 °C 180 Tj Page 12 2006-08-25 Rev. 2.0 BSO 612 CV G Published by Infineon Technologies AG 81726 München, Germany © Infineon Technologies AG 2006. All Rights Reserved. Attention please! The information given in this data sheet shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com ). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 13 2006-08-25