Final Product/Process Change Notification Document # : FPCN20888X Issue Date: 21 May 2015 Title of Change: Wafer Capacity Expansion for Trench 3 Schottky MOSFETs Proposed first ship date: 28 August 2015 Contact information: Contact your local ON Semiconductor Sales Office or Melyssa Hutchins<[email protected]> Samples: Contact your local ON Semiconductor Sales Office or Brian Goodburn <[email protected]> Additional Reliability Data: Contact your local ON Semiconductor Sales Office or Donna Scheuch <[email protected] > Type of notification: This is a Final Product/Process Change Notification (FPCN) sent to customers. FPCNs are issued 90 days prior to implementation of the change. ON Semiconductor will consider this change approved unless specific conditions of acceptance are provided in writing within 30 days of receipt of this notice. To do so, contact <[email protected]>. Change Part Identification: There will be change to the finished good part marking on product assembled with the Trench Die fabricated from the UMC Wafer Fab facility. Full traceability of the die manufacturing facility will be available through the lot number recorded on the shipping labels. Change category(s): Wafer Fab Change Assembly Change Test Change Sites Affected: All site(s) not applicable ON Semiconductor site(s) : External Foundry/Subcon site(s): Manufacturing Site Change/Addition Manufacturing Process Change Material Change Site 1 United Microelectronics Corp (UMC) Product specific change Datasheet/Product Doc change Shipping/Packaging/Marking Other: _______________________ Site 2 Description and Purpose: This Product Change Notice is to announce that ON Semiconductor is adding wafer fabrication capacity for their Trench 3 schottky MOSFET technology silicon platforms. ON Semiconductor has qualified United Microelectronics Corp (UMC), a wafer fabrication facility located in Taiwan. Upon expiration of this FPCN, ON Semiconductor will supply parts utilizing the UMC fab. Device quality and reliability will continue to meet ON Semiconductors high standards. TEM001092 Rev. D Page 1 of 2 Final Product/Process Change Notification Document # : FPCN20888X Issue Date: 21 May 2015 Reliability Data Summary: Test Prep HTRB Name Test Conditions Sample preparation and initial part testing High Temp Reverse Bias various TA = 150°C , Vgss = 100% of max rated TA = 150°C , Vdss = 80% of max rated Ta=+25°C, delta Tj=100°C On/of = 2 min Test Results Read Point Initial Electrical (rej/ ss) NTMFS4933 (rej/ ss) NTMFS4933 (rej/ ss) NTMFS4935 (rej/ ss) NTMFS4935 done done done done 504 Hrs 0/77 0/77 0/77 0/77 504 Hrs 0/77 0/77 0/77 0/77 7500 Hrs 0/77 0/77 0/77 0/77 HTGB High Temp Gate Bias MSL 1 PC - IOL Intermittent Operating Life + PC MSL 1 PC - TC Temperature Cycling + PC -55 °C to + 150°C 500 Cyc 0/77 0/77 0/77 0/77 MSL 1 PC - AC Autoclave + PC 121°C/100% RH/15psig 96 Hrs 0/77 0/77 0/77 0/77 MSL 1 PC - HAST Highly Accelerated Stress Test Temp= +131°C, RH=85% , p = 18.8 psig, bias 96 Hrs 0/77 0/77 0/77 0/77 Test Prep HTRB Name Sample preparation and initial part testing High Temp Reverse Bias Test Conditions End Point Req’s Test Results (rej/ ss) (rej/ ss) (rej/ ss) (rej/ ss) Read Point Lot A NTMFS4982NF Lot B NTMFS4982NF Lot C NTMFS4982NF NTMFS4982NF Control various --- Initial Electrical done done done done Tj = 150°C for 1008 hours c = 0, Room 168 hr 0/84 0/84 0/84 0/84 504 Hrs 0/84 0/84 0/84 0/84 1008 Hrs 0/84 0/84 0/84 0/84 Electrical Characteristic Summary: There is no change in electrical parametric performance. Characterization data is available upon request. List of affected Standard Parts: NTMFD4901NFT1G NTMFD4902NFT1G NTMFS4982NFT1G NTMFS4983NFT1G NTMFS4985NFT1G NTMFS4985NFT3G TEM001092 Rev. D Page 2 of 2