NTMFD4902NF Dual N-Channel Power MOSFET with Integrated Schottky 30 V, High Side 18 A / Low Side 23 A, Dual N−Channel SO8FL www.onsemi.com V(BR)DSS RDS(ON) MAX Features • • • • • Co−Packaged Power Stage Solution to Minimize Board Space Low Side MOSFET with Integrated Schottky Minimized Parasitic Inductances Optimized Devices to Reduce Power Losses These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant ID MAX 6.5 mW @ 10 V Q1 Top FET 30 V 18 A 10 mW @ 4.5 V Q2 Bottom FET 30 V 4.1 mW @ 10 V 23 A 6.2 mW @ 4.5 V D1 (2, 3, 4, 9) Applications • DC−DC Converters • System Voltage Rails • Point of Load (1) G1 S1/D2 (10) (8) G2 S2 (5, 6, 7) PIN CONNECTIONS D1 4 D1 3 D1 2 5 S2 9 D1 10 S1/D2 G1 1 6 S2 7 S2 8 G2 (Bottom View) MARKING DIAGRAM 1 DFN8 CASE 506BX 4902NF AYWZZ 1 4902NF A Y W ZZ = Specific Device Code = Assembly Location = Year = Work Week = Lot Traceability ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. © Semiconductor Components Industries, LLC, 2015 September, 2015 − Rev. 5 1 Publication Order Number: NTMFD4902NF/D NTMFD4902NF MAXIMUM RATINGS (TJ = 25°C unless otherwise stated) Parameter Drain−to−Source Voltage Q1 Drain−to−Source Voltage Q2 Gate−to−Source Voltage Q1 Gate−to−Source Voltage Q2 Continuous Drain Current RqJA (Note 1) TA = 25°C Q1 Symbol Value Unit VDSS 30 V VGS ±20 V ID 13.5 TA = 85°C TA = 25°C 9.7 Q2 17.5 TA = 85°C Power Dissipation RqJA (Note 1) TA = 25°C Continuous Drain Current RqJA ≤ 10 s (Note 1) TA = 25°C 12.6 Q1 PD Q2 Q1 TA = 25°C ID TA = 25°C Continuous Drain Current RqJA (Note 2) TA = 25°C Q2 PD Q1 Pulsed Drain Current TA = 25°C tp = 10 ms ID W 10.3 7.4 Q2 13.3 A 9.6 Q1 PD Q2 Operating Junction and Storage Temperature 3.45 3.45 TA = 85°C TA = 25 °C A 16.6 Q1 TA = 85°C Power Dissipation RqJA (Note 2) 18.2 23 Q2 TA = 25°C W 13.1 TA = 85°C Power Dissipation RqJA ≤ 10 s (Note 1) 1.90 1.99 TA = 85°C Steady State A Q1 W 1.16 IDM Q2 Q1 1.10 60 A 80 TJ, TSTG −55 to +150 °C IS 3.4 A Q2 Source Current (Body Diode) Q1 Q2 Drain to Source dV/dt Single Pulse Drain−to−Source Avalanche Energy (TJ = 25C, VDD = 50 V, VGS = 10 V, IL = XX Apk, L = 0.1 mH, RG = 25 W) 4.9 dV/dt 6.0 V/ns mJ 24 A Q1 EAS 28.8 27 A Q2 EAS 36.5 TL 260 Lead Temperature for Soldering Purposes (1/8” from case for 10 s) °C Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 2. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. www.onsemi.com 2 NTMFD4902NF THERMAL RESISTANCE MAXIMUM RATINGS Parameter Junction−to−Ambient – Steady State (Note 3) FET Symbol Value Q1 RqJA 65.9 Q2 Junction−to−Ambient – Steady State (Note 4) 62.8 Q1 RqJA 113.2 Q2 Junction−to−Ambient – (t ≤ 10 s) (Note 3) Unit °C/W 108 Q1 RqJA 36.2 Q2 36.2 3. Surface−mounted on FR4 board using 1 sq−in pad, 2 oz Cu. 4. Surface−mounted on FR4 board using the minimum recommended pad size of 100 mm2. ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Drain−to−Source Breakdown Voltage Q1 V(BR)DSS VGS = 0 V, ID = 250 mA 30 VGS = 0 V, ID = 1.0 mA 30 Drain−to−Source Breakdown Voltage Temperature Coefficient Q1 Zero Gate Voltage Drain Current Q1 Typ Max Unit OFF CHARACTERISTICS Q2 Q2 V(BR)DSS / TJ IDSS Q2 Gate−to−Source Leakage Current Q1 mV / °C 18 15 VGS = 0 V, VDS = 24 V VGS = 0 V, VDS = 24 V IGSS V TJ = 25°C 1 TJ = 125°C 10 TJ = 25°C 500 VGS = 0 V, VDS = ±20 V ±100 mA nA ±100 Q2 ON CHARACTERISTICS (Note 5) Gate Threshold Voltage Q1 VGS(TH) VGS = VDS, ID = 250 mA Q2 Negative Threshold Temperature Coefficient Q1 Drain−to−Source On Resistance Q1 Q2 VGS(TH) / TJ RDS(on) Q2 Forward Transconductance Q1 gFS 1.2 2.2 1.2 2.2 mV / °C 4.5 4.0 VGS = 10 V ID = 10 A 5.2 6.5 VGS = 4.5 V ID = 10 A 8.0 10 VGS = 10 V ID = 15 A 3.3 4.1 VGS = 4.5 V ID = 15 A 5.0 6.2 VDS = 1.5 V, ID = 10 A Q2 28 V mW S 35 CHARGES, CAPACITANCES & GATE RESISTANCE Q1 Input Capacitance Q2 1150 CISS 1590 Q1 Output Capacitance Q2 360 COSS VGS = 0 V, f = 1 MHz, VDS = 15 V Q1 Reverse Capacitance Q2 813 pF 105 CRSS 83 Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 3 NTMFD4902NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit CHARGES, CAPACITANCES & GATE RESISTANCE Q1 Total Gate Charge Q2 9.7 QG(TOT) 11.5 Q1 Threshold Gate Charge Q2 1.1 QG(TH) Q1 Gate−to−Source Charge Q2 1.4 VGS = 4.5 V, VDS = 15 V; ID = 10 A QGS 4.2 Q1 Gate−to−Drain Charge Q2 3.7 QGD 3.4 Q1 Total Gate Charge Q2 nC 3.3 19.1 QG(TOT) VGS = 10 V, VDS = 15 V; ID = 10 A nC 24.9 SWITCHING CHARACTERISTICS (Note 6) Q1 Turn−On Delay Time Q2 9.0 td(ON) 10.5 Q1 Rise Time 15 tr Q2 VGS = 4.5 V, VDS = 15 V, ID = 10 A, RG = 3.0 W Q1 Turn−Off Delay Time Q2 td(OFF) ns 14 17.7 Q1 Fall Time 15.2 4.0 tf Q2 4.7 SWITCHING CHARACTERISTICS (Note 6) Q1 Turn−On Delay Time Q2 6.0 td(ON) 7.0 Q1 Rise Time Q2 14 tr VGS = 10 V, VDS = 15 V, ID = 10 A, RG = 3.0 W Q1 Turn−Off Delay Time Q2 td(OFF) Q2 ns 17 22 Q1 Fall Time 14 3.0 tf 3.3 DRAIN−SOURCE DIODE CHARACTERISTICS VGS = 0 V, IS = 3 A Q1 Forward Voltage VSD Q2 VGS = 0 V, IS = 2 A TJ = 25°C 0.75 TJ = 125°C 0.62 TJ = 25°C 0.37 TJ = 125°C 0.31 1.0 0.70 V Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. www.onsemi.com 4 NTMFD4902NF ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified) Parameter FET Symbol Test Condition Min Typ Max Unit DRAIN−SOURCE DIODE CHARACTERISTICS Q1 Reverse Recovery Time Q2 23 tRR 24.5 Q1 Charge Time Q2 12 ta VGS = 0 V, dIS/dt = 100 A/ms, IS = 3 A Q1 Discharge Time Q2 13 tb Q2 11 11.5 Q1 Reverse Recovery Charge ns 12 QRR 24 nC PACKAGE PARASITIC VALUES Q1 Source Inductance Q2 0.38 LS 0.65 Q1 Drain Inductance Q2 0.054 LD 0.007 TA = 25°C Q1 Gate Inductance Q2 LG Q2 0.8 RG nH 1.5 1.5 Q1 Gate Resistance nH 0.8 nH W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 5. Pulse Test: pulse width ≤ 300 ms, duty cycle ≤ 2%. 6. Switching characteristics are independent of operating junction temperatures. ORDERING INFORMATION Package Shipping† NTMFD4902NFT1G DFN8 (Pb−Free) 1500 / Tape & Reel NTMFD4902NFT3G DFN8 (Pb−Free) 5000 / Tape & Reel Device †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. www.onsemi.com 5 NTMFD4902NF TYPICAL CHARACTERISTICS − Q1 40 50 3.8 V 3.6 V 3.4 V 4.5 V 10 V TJ = 25°C 3.2 V 25 20 15 3.0 V 10 2.8 V 5 0 1 2 3 4 TJ = 125°C 25 20 15 10 TJ = 25°C TJ = −55°C 5 0 1 2 3 4 Figure 1. On−Region Characteristics Figure 2. Transfer Characteristics 0.016 0.014 0.012 0.010 0.008 0.006 0.004 3 4 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) 0.018 0.010 T = 25°C 0.009 0.008 VGS = 4.5 V 0.007 0.006 0.005 VGS = 10 V 0.004 0.003 0 5 10 15 20 25 30 35 40 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 3. On−Resistance vs. Gate−to−Source Resistance Figure 4. On−Resistance vs. Drain Current and Gate Voltage 10,000 1.8 1.6 ID = 10 A VGS = 10 V TJ = 150°C IDSS, LEAKAGE (nA) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 10 A TJ = 25°C 2 35 0 0.020 0.002 40 5 VGS = 2.4 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) ID, DRAIN CURRENT (A) ID, DRAIN CURRENT (A) 35 30 VDS ≥ 5 V 45 1.4 1.2 1.0 1,000 TJ = 125°C 100 0.8 VGS = 0 V 0.6 −50 10 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 5. On−Resistance Variation with Temperature Figure 6. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 6 30 NTMFD4902NF TYPICAL CHARACTERISTICS − Q1 C, CAPACITANCE (pF) 1400 VGS, GATE−TO−SOURCE VOLTAGE (V) 1600 TJ = 25°C VGS = 0 V Ciss 1200 1000 800 Coss 600 400 Crss 200 0 0 5 10 15 20 25 QT 9 8 7 6 5 4 Qgs Qgd 3 2 ID = 10 A TJ = 25°C 1 0 0 30 2 4 6 8 10 12 14 18 16 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 7. Capacitance Variation Figure 8. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 20 10 1000 VGS = 10 V VDD = 15 V ID = 10 A IS, SOURCE CURRENT (A) 9 td(off) t, TIME (ns) 11 10 100 tr 10 td(on) tf VGS = 0 V 8 7 6 5 4 3 TJ = 25°C 2 1 0 0.0 1 1 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 9. Resistive Switching Time Variation vs. Gate Resistance Figure 10. Diode Forward Voltage vs. Current www.onsemi.com 7 0.9 NTMFD4902NF TYPICAL CHARACTERISTICS − Q2 50 60 3.4 V 45 TJ = 25°C 35 ID, DRAIN CURRENT (A) 4.5 V 10 V 2.8 V 30 25 20 2.6 V 15 10 2.4 V 5 0 1 2 3 4 20 TJ = 25°C 10 5 0.5 0 1.5 1 2 2.5 3 Figure 11. On−Region Characteristics Figure 12. Transfer Characteristics 0.010 0.005 3 4 5 6 7 8 9 10 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VGS, GATE−TO−SOURCE VOLTAGE (V) 0.015 3.5 0.007 0.006 0.005 VGS = 4.5 V 0.004 0.003 VGS = 10 V 0.002 0.001 0 5 10 15 20 25 30 35 40 45 VGS, GATE−TO−SOURCE VOLTAGE (V) ID, DRAIN CURRENT (A) Figure 13. On−Resistance vs. Gate−to−Source Resistance Figure 14. On−Resistance vs. Drain Current and Gate Voltage 1.8 1.7 1.6 TJ = 150°C 1.5 1.4 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 −50 50 1E−1 ID = 20 A VGS = 10 V IDSS, LEAKAGE (A) RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED) TJ = 125°C 30 VDS, DRAIN−TO−SOURCE VOLTAGE (V) ID = 15 A TJ = 25°C 2 40 0 0.020 0 50 TJ = −55°C VGS = 2.2 V 0 RDS(on), DRAIN−TO−SOURCE RESISTANCE (W) VDS ≥ 5 V 3.0 V 40 ID, DRAIN CURRENT (A) 3.2 V 1E−2 TJ = 125°C 1E−3 VGS = 0 V 1E−4 TJ = 25°C 1E−5 −25 0 25 50 75 100 125 150 0 5 10 15 20 25 TJ, JUNCTION TEMPERATURE (°C) VDS, DRAIN−TO−SOURCE VOLTAGE (V) Figure 15. On−Resistance Variation with Temperature Figure 16. Drain−to−Source Leakage Current vs. Voltage www.onsemi.com 8 30 NTMFD4902NF TYPICAL CHARACTERISTICS − Q2 TJ = 25°C VGS = 0 V 2000 C, CAPACITANCE (pF) VGS, GATE−TO−SOURCE VOLTAGE (V) 2400 Ciss 1600 Coss 1200 800 400 Crss 0 0 5 10 15 20 25 QT 9 8 7 6 5 Qgd 4 Qgs 3 VDD = 15 V VGS = 10 V ID = 10 A TJ = 25°C 2 1 0 0 30 2 4 6 8 10 12 14 16 18 20 22 24 26 VDS, DRAIN−TO−SOURCE VOLTAGE (V) Qg, TOTAL GATE CHARGE (nC) Figure 17. Capacitance Variation Figure 18. Gate−to−Source and Drain−to−Source Voltage vs. Total Charge 10 1000 VGS = 10 V VDD = 15 V ID = 10 A 9 IS, SOURCE CURRENT (A) t, TIME (ns) 11 10 td(off) 100 tr td(on) 10 tf 7 6 5 4 3 2 1 0 0.0 1 1 8 VGS = 0 V TJ = 25°C 10 100 0.1 0.2 0.3 0.4 0.5 0.6 0.7 RG, GATE RESISTANCE (W) VSD, SOURCE−TO−DRAIN VOLTAGE (V) Figure 19. Resistive Switching Time Variation vs. Gate Resistance Figure 20. Diode Forward Voltage vs. Current www.onsemi.com 9 NTMFD4902NF PACKAGE DIMENSIONS DFN8 5x6, 1.27P Dual Flag (SO8FL−Dual−Asymmetrical) CASE 506BX ISSUE D NOTES: 1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994. 2. CONTROLLING DIMENSION: MILLIMETERS. 3. DIMENSION b APPLIES TO PLATED TERMINAL AND IS MEASURED BETWEEN 0.15 AND 0.25 MM FROM THE TERMINAL TIP. 4. COPLANARITY APPLIES TO THE EXPOSED PADS AS WELL AS THE TERMINALS. 5. DIMENSIONS b AND L ARE MEASURED AT THE PACKAGE SURFACE 6. DIMENSIONS D1 AND E1 DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. 7. SEATING PLANE IS DEFINED BY THE TERMINALS. A1 IS DEFINED AS THE DISTANCE FROM THE SEATING PLANE TO THE LOWEST POINT ON THE PACKAGE BODY. 2X 0.20 C D A D1 8 2 0.20 C E1 E ÉÉ ÉÉ 1 2X 5 4X NOTE 6 PIN ONE IDENTIFIER B NOTE 6 7 6 3 h c 4 DIM A A1 b b1 c D D1 D2 E E1 E2 E3 e h k k1 k2 L A1 NOTE 7 TOP VIEW 0.10 C DETAIL A A 0.10 C NOTE 4 C SIDE VIEW SEATING PLANE DETAIL A e DETAIL B e/2 1 8X 4 MILLIMETERS MAX MIN 1.10 0.90 0.00 0.05 0.41 0.61 0.41 0.61 0.23 0.33 5.00 5.30 4.50 5.10 3.50 4.22 6.00 6.30 5.50 6.10 2.27 2.67 0.82 1.22 1.27 BSC −−− 12 _ 0.39 0.59 0.56 0.76 0.73 0.93 0.35 0.55 b E3 k 0.10 C A B 0.05 C NOTE 3 RECOMMENDED SOLDERING FOOTPRINT* 5.35 k1 k2 E2 8 0.10 REF 6X b1 NOTE 3 8X 0.69 8X 0.64 DETAIL B 5 D2 BOTTOM VIEW PACKAGE OUTLINE 8X L 1.97 6.45 2.68 2.33 1.22 4X 0.69 1.27 PITCH DIMENSION: MILLIMETERS *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. 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