CD4148WSP SMALL-SIGNAL CHIP DIODE 0805 FEATURES MECHANICAL DATA This diode is also available other case styles Including the 1206 case with the type designation CD4148WP, and the 0603 case with the type Designation CD4148WTP Silicon Epitaxial Planar Diode Fast switching diode. Case 0805 Weight Approx. 6mg Marking Cathode band Absolute Maxmum Ratings & Thermal Characteristics Tamb=25 C, unless otherwise specified o PARAMETER SYMBOL VALUE UNITS VR 75 Volts VRM 100 Volts 300 mA Reverse Voltage Peak Reverse Voltage Forward Continuous current IFM Average rectified current sin half wave rectification with resistive load f =50Hz IF(AV) Surge Forward Current t 1S and TJ=250C IFSM Power dissipation 1) 500 R mA 1) Ptot Typical Thermal Resistance Junction to Ambiant Air mA 150 mW 400 1) K/W 375 JA Junction Temperature TJ 175 0 Storage Temperature TS -65 to +175 0 C C 1) Valid provided that electrodes are kept at ambient temperature. ELECTRICAL CHARACTERISTICS Tamb=25 C, unless otherwise specified o PARAMETER SYMBOL Min Max UNITS Forward voltage IF = 10mA VF 1.0 V Leakage current VR = 20V VR = 75V VR = 20V, TJ = 1500C IR 25 5.0 50 nA A A Capacitance VF = VR = 0V Ctot 4 pF Vfr 2.5 V TRR 4 nS Voltage rise when switching ON tested with 50mA pulses, tp = 0.1us, rise time<30ns fp = (5 to 100) KHz Reverse recovery Time IF = 10mA to IR = 1mA, VR = 6V, RL = 100 Rectification efficiency f = 100MHz, VRF = 2V www.paceleader.tw r 1 45 % CD4148WSP SMALL-SIGNAL CHIP DIODE Crownpo Technology www.paceleader.tw 2