Ordering number : ENA1406A ATP104 P-Channel Power MOSFET http://onsemi.com –30V, –75A, 8.4mΩ, Single ATPAK Features • • • Low ON-resistance Slim package Halogen free compliance • • • Large current 4.5V drive Protection diode in Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit --30 V ±20 V --75 A Allowable Power Dissipation ID IDP PD Channel Temperature Tch 150 Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 130 mJ 38 A Drain Current (PW≤10μs) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C --225 A 60 W °C Note : *1 VDD=15V, L=100μH, IAV=38A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP104-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP104 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 0.8 1.7 4,2 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/20409PA MSIM TC-00001830 No. A1406-1/7 ATP104 Electrical Characteristics at Ta=25°C Parameter Symbol Conditions ID=--1mA, VGS=0V VDS=--30V, VGS=0V Ratings min typ Unit max --30 V Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) VGS=±16V, VDS=0V VDS=--10V, ID=--1mA Forward Transfer Admittance | yfs | VDS=--10V, ID=--38A 70 RDS(on)1 ID=--38A, VGS=--10V 6.4 8.4 mΩ RDS(on)2 ID=--19A, VGS=--4.5V 9.6 13.5 mΩ Static Drain-to-Source On-State Resistance Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance --1.2 --1 μA ±10 μA --2.6 V S 3950 pF 880 pF Crss 610 pF Turn-ON Delay Time td(on) 24 ns Rise Time tr 520 ns Turn-OFF Delay Time td(off) 290 ns Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=--10V, f=1MHz See specified Test Circuit. VDS=--15V, VGS=--10V, ID=--75A 260 ns 76 nC 18 nC 13 IS=--75A, VGS=0V --1.02 nC --1.5 V Switching Time Test Circuit 0V --10V VDD= --15V VIN ID= --38A RL=0.39Ω VIN D PW=10μs D.C.≤1% VOUT G ATP104 P.G 50Ω S Ordering Information Device ATP104-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1406-2/7 ATP104 --45 --40 VGS= --3.5V --35 --30 --25 --20 --15 --40 --30 --1.0 --1.5 RDS(on) -- VGS 30 26 ID= --19A --38A 20 --0.5 --1.0 --1.5 18 16 14 12 10 8 6 --2.0 --2.5 --3.0 --3.5 --4.0 Cutoff Voltage, VGS(off) -- V --4.5 IT14389 RDS(on) -- Tc 18 24 22 0 IT14388 Tc=25°C Single pulse 28 0 --2.0 --2 5°C 25° C --0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 75°C --50 --10 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ --60 --20 --10 --5 0 --70 Tc= 75° C --50 Tc= --25° C --80 --16.0 -V 1 --55 VDS= --10V --90 Drain Current, ID -- A --60 Drain Current, ID -- A --4.0V 0.0V --65 --6 .0V --4 .5 V --8.0 V --70 ID -- VGS(off) --100 Tc=25°C 25° C ID -- VDS --75 Single pulse 16 14 19A 12 = -, ID 4.5V = -VGS 10 8A = --3 0V, I D 1 = VGS 8 6 4 4 --8 --10 --12 --14 Gate-to-Source Voltage, VGS -- V 100 7 °C 25 3 C 5° 2 = Tc 10 --2 °C 75 7 5 3 2 1.0 7 --0.1 2 3 5 7 --1.0 2 3 5 7 --10 2 3 Drain Current, ID -- A 3 2 --100 VGS=0V 7 Single pulse 5 3 2 --10 7 5 3 2 --1.0 7 5 3 2 --0.1 7 5 3 2 --0.01 7 5 3 2 --0.001 --0.2 --0.4 SW Time -- ID 100 125 IS -- VSD --0.6 150 IT14391 --0.8 --1.0 --1.2 --1.4 IT14393 f=1MHz 7 5 1000 7 5 td(off) 3 tf 2 100 tr 7 5 3 Ciss 3 2 1000 Coss 7 Crss 5 td(on) 2 10 --0.1 75 Ciss, Coss, Crss -- VDS 10000 VDD= --15V VGS= --10V 50 Diode Forward Voltage, VSD -- V IT14392 Ciss, Coss, Crss -- pF Switching Time, SW Time -- ns 2 5 7 --100 25 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S VDS= --10V 5 0 --25 IT14390 | yfs | -- ID 2 2 --50 --16 --25° C --6 25°C --4 5°C --2 Tc= 7 2 0 3 2 3 5 7 --1.0 2 3 5 7 --10 Drain Current, ID -- A 2 3 5 7 --100 IT14394 2 0 --5 --10 --15 --20 --25 Drain-to-Source Voltage, VDS -- V --30 IT14395 No. A1406-3/7 ATP104 VGS -- Qg --10 VDS= --15V ID= --75A --8 --7 --6 --5 --4 --3 --2 0 10 20 30 40 50 60 Total Gate Charge, Qg -- nC PD -- Tc 70 80 --10 7 5 40 30 20 10 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14398 10 0μ 0μ s s Operation in this area is limited by RDS(on). 3 2 --1.0 7 5 Tc=25°C Single pulse 2 3 5 7 --1.0 2 3 5 7 --10 2 Drain-to-Source Voltage, VDS -- V 3 5 IT14397 EAS -- Ta 120 50 20 1m s 10 ms DC 10 op 0m era s tio n 3 2 IT14396 60 0 PW≤10μs 1 ID= --75A --0.1 --0.1 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 70 0 --100 7 5 3 2 --1 0 IDP= --225A 3 2 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V --9 ASO 5 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1406-4/7 ATP104 Taping Specification ATP104-TL-H No. A1406-5/7 ATP104 Outline Drawing ATP104-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1406-6/7 ATP104 Note on usage : Since the ATP104 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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