Ordering number : ENA1543A ATP602 N-Channel Power MOSFET http://onsemi.com 600V, 5A, 2.7Ω, ATPAK Features • • ON-resistance RDS(on)=2.1Ω (typ.) 10V drive • • Input capacitance Ciss=350pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) Unit 600 V ±30 V Allowable Power Dissipation ID IDP PD 70 W Channel Temperature Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 74 mJ 5 A Drain Current (Pulse) Avalanche Current *2 PW≤10μs, duty cycle≤1% Tc=25°C 5 A 15 A Note : *1 VDD=99V, L=5mH, IAV=5A (Fig.1) *2 L≤5mH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP602-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP602 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.6 0.4 2.3 0.1 2.3 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 62712 TKIM/12710QB TKIM TC-00002087 No. A1543-1/7 ATP602 Electrical Characteristics at Ta=25°C Parameter Drain-to-Source Breakdown Voltage Symbol V(BR)DSS IDSS ID=10mA, VGS=0V VDS=480V, VGS=0V VGS=±30V, VDS=0V Forward Transfer Admittance IGSS VGS(off) | yfs | Static Drain-to-Source On-State Resistance RDS(on) Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time Rise Time Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Turn-OFF Delay Time Fall Time Ratings Conditions min typ 600 VDS=10V, ID=1mA 3 VDS=10V, ID=2.5A ID=2.5A, VGS=10V 1.5 V 100 μA ±100 nA 5 2.9 V S 2.1 2.7 Ω 350 pF 68 pF 15 pF td(on) 14.2 ns tr td(off) 37.4 ns 36.2 ns Total Gate Charge tf Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=30V, f=1MHz See Fig.2 VDS=200V, VGS=10V, ID=5A 20.4 ns 13.6 nC 3.4 nC 7.2 IS=5A, VGS=0V Fig.1 Avalanche Resistance Test Circuit 10V 0V 1.2 V VDD=200V VIN ID=2.5A RL=80Ω ≥50Ω RG VOUT VIN ATP602 VDD 50Ω nC 0.9 Fig.2 Switching Time Test Circuit L 10V 0V Unit max PW=10μs D.C.≤0.5% P.G D G RGS=50Ω S ATP602 Ordering Information Device ATP602-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1543-2/7 ATP602 ID -- VDS 8 15V Tc= --25°C 8V 5 7V 3 2 6V 6 8 10 12 14 16 Drain-to-Source Voltage, VDS -- V RDS(on) -- VGS Static Drain-to-Source On-State Resistance, RDS(on) -- Ω 6 Tc=75°C 25°C 2 --25°C 1 6 7 8 9 10 11 12 13 | yfs | -- ID 7 14 1.0 7 5 3 5 7 2 1.0 3 Drain Current, ID -- A --25 0 25 50 75 100 125 VDD=200V VGS=10V 150 IT14903 IS -- VSD VGS=0V Single pulse 3 2 1.0 7 5 3 2 0.1 7 5 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT14905 Ciss, Coss, Crss -- VDS f=1MHz 1000 7 Ciss, Coss, Crss -- pF 2 100 tf 7 td (off) 5 3 tr 2 td(on) 5 Ciss 3 2 100 Coss 7 5 3 2 Crss 10 7 0.1 1 0.01 0.2 7 20 IT14901 = V GS 2 2 3 18 5A IT14904 SW Time -- ID 5 5 16 2. I D= , V 10 3 3 2 2 14 4 3 2 3 2 0.1 12 5 10 7 5 C 75° 10 Case Temperature, Tc -- °C Source Current, IS -- A Tc 8 Single pulse IT14902 °C -25 =- 2 6 RDS(on) -- Tc 0 --50 15 °C 25 3 4 Gate-to-Source Voltage, VGS -- V VDS=10V 5 2 6 4 5 0 IT14900 5 3 4 0 20 ID=2.5A Single pulse Gate-to-Source Voltage, VGS -- V Forward Transfer Admittance, | yfs | -- S 18 75°C 6 --25°C 4 25°C Tc=7 5°C 2 8 2 VGS=5V 0 10 25 ° C 4 1 Switching Time, SW Time -- ns Drain Current, ID -- A 6 0 VDS=20V 12 10V Static Drain-to-Source On-State Resistance, RDS(on) -- Ω Drain Current, ID -- A 7 0 ID -- VGS 14 Tc=25°C 2 3 5 7 1.0 2 Drain Current, ID -- A 3 5 7 IT14906 10 7 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14907 No. A1543-3/7 ATP602 VGS -- Qg 10 10 7 5 7 6 5 4 3 3 2 4 6 8 10 12 PD -- Tc 16 50 40 30 20 10 0 20 40 60 80 100 3 120 Case Temperature, Tc -- °C 140 160 IT14910 s 5 7 10 2 3 5 7 100 2 3 5 7 1000 IT16934 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 60 0 2 IT14908 70 μs Tc=25°C Single pulse 0.01 1.0 Avalanche Energy derating factor -- % 80 14 Operation in this area is limited by RDS(on). 3 2 1 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 1.0 7 5 0.1 7 5 2 0μ 3 2 2 0 10 10 ID=5A s 1m Drain Current, ID -- A 8 0 IDP=15A (PW≤10μs) n s m tio 10 ms era 0 p 10 C o D Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=200V ID=5A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1543-4/7 ATP602 Taping Specification ATP602-TL-H No. A1543-5/7 ATP602 Outline Drawing ATP602-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1543-6/7 ATP602 Note on usage : Since the ATP602 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1543-7/7