Ordering number : ENA1395A ATP206 N-Channel Power MOSFET http://onsemi.com 40V, 40A, 16mΩ, Single ATPAK Features • • • Low ON-resistance 4.5V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 40 PW≤10μs, duty cycle≤1% V 40 A 120 A 40 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 26 mJ 20 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=100μH, IAV=20A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP206-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP206 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 3 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 1 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/10709PA MS IM TC-00001774 No. A1395-1/7 ATP206 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance RDS(on)1 RDS(on)2 Input Capacitance Ciss Output Capacitance Coss Conditions Ratings min typ Unit max 40 ID=1mA, VGS=0V VDS=40V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.5 9 VDS=10V, ID=20A ID=20A, VGS=10V ID=10A, VGS=4.5V VDS=20V, f=1MHz 1 μA ±10 μA 2.6 15 V S 12 16 mΩ 20 28 mΩ 1630 pF 205 pF Reverse Transfer Capacitance Crss 110 pF Turn-ON Delay Time td(on) 19 ns Rise Time tr 110 ns Turn-OFF Delay Time td(off) 83 ns Fall Time tf 73 ns Total Gate Charge Qg 27 nC Gate-to-Source Charge Qgs 7.0 nC Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD See specified Test Circuit. VDS=20V, VGS=10V, ID=40A 5.2 IS=40A, VGS=0V 0.99 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=20V VIN ID=20A RL=1Ω VIN D PW=10μs D.C.≤1% VOUT G ATP206 P.G 50Ω S Ordering Information Device ATP206-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1395-2/7 ATP206 VGS=3.5V 0.5 1.0 1.5 Drain-to-Source Voltage, VDS -- V Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Single pulse Tc=25°C 35 30 25 20 ID=10A 20A 15 10 5 0 2 3 4 5 6 7 8 9 10 11 12 13 14 Gate-to-Source Voltage, VGS -- V = Tc 5°C --2 3 75 °C 2 1.0 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 3 5 7 20 A =20 V, I D 0 . 0 =1 VGS 15 10 5 --20 0 20 tf 3 tr td(on) 2 40 60 80 100 120 140 160 IT14336 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 IT14338 Ciss, Coss, Crss -- VDS f=1MHz Ciss, Coss, Crss -- pF 5 6.0 A 2 7 5.5 IT14334 3 2 100 5.0 =10 V, I D 5 . 4 = VGS 25 5 td (off) 4.5 Diode Forward Voltage, VSD -- V VDD=20V VGS=10V 3 4.0 Single pulse IT14337 SW Time -- ID 5 3.5 30 0.01 7 5 3 2 0.001 5 3 3.0 35 100 7 5 3 2 7 2 2.5 Case Temperature, Tc -- °C Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 5 2.0 RDS(on) -- Tc 0 --60 --40 16 C 25° 7 3 0.1 Switching Time, SW Time -- ns 15 1.5 40 2 10 1.0 Gate-to-Source Voltage, VGS -- V VDS=10V 3 0.5 IT14335 | yfs | -- ID 5 0 IT14333 RDS(on) -- VGS 40 0 2.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 Tc= --25 °C 75°C 10 5 0 20 --25° C 10 25° C 15 30 C 4.0V --25 ° 20 40 5°C 25°C 25 Tc= 75° C Drain Current, ID -- A 8 .0 50 V 30 Tc= 7 6.0V VDS=10V V 4.5 16.0V 10.0 Drain Current, ID -- A V 35 ID -- VGS 60 Tc=25°C 25° C ID -- VDS 40 Ciss 1000 7 5 3 Coss 2 Crss 10 100 7 7 5 0.1 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14339 5 0 5 10 15 20 25 30 35 Drain-to-Source Voltage, VDS -- V 40 IT14340 No. A1395-3/7 ATP206 VGS -- Qg 10 8 7 6 5 4 3 3 2 5 10 15 25 20 Total Gate Charge, Qg -- nC PD -- Tc 35 30 25 20 15 10 5 0 20 40 60 80 100 120 Case Temperature, Tc -- °C 140 160 IT14343 1m s DC op er s ati on Tc=25°C Single pulse 2 3 5 7 1.0 2 3 5 7 10 2 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 40 0 Operation in this area is limited by RDS(on). IT14341 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 45 0m m 0.1 0.1 30 10 10 3 2 1 PW≤10μs 1 10 0μs 0μ s s 10 7 5 1.0 7 5 0 ID=40A 3 2 2 0 IDP=120A 100 7 5 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=20V ID=40A 3 5 7 IT14342 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1395-4/7 ATP206 Taping Specification ATP206-TL-H No. A1395-5/7 ATP206 Outline Drawing ATP206-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1395-6/7 ATP206 Note on usage : Since the ATP206 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PS No. A1395-7/7