Ordering number : ENA1507A ATP212 N-Channel Power MOSFET http://onsemi.com 60V, 35A, 23mΩ, Single ATPAK Features • • • Low ON-resistance 4V drive Halogen free compliance Large current Slim package Protection diode in • • • Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (PW≤10μs) Allowable Power Dissipation Unit 60 PW≤10μs, duty cycle≤1% V 35 A 105 A 40 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 19 mJ 18 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=10V, L=100μH, IAV=18A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP212-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP212 6.05 4.6 9.5 7.3 LOT No. TL Electrical Connection 0.8 0.4 2.3 0.1 2.3 0.6 0.55 0.7 0.5 3 1.7 2,4 2 1 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/62409PA TKIM TC-00001998 No. A1507-1/7 ATP212 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage V(BR)DSS Zero-Gate Voltage Drain Current IDSS Gate-to-Source Leakage Current IGSS Cutoff Voltage VGS(off) Forward Transfer Admittance | yfs | Static Drain-to-Source On-State Resistance Conditions Ratings min typ Unit max 60 ID=1mA, VGS=0V VDS=60V, VGS=0V VGS=±16V, VDS=0V VDS=10V, ID=1mA V 1.2 1 μA ±10 μA 2.6 V 35 RDS(on)1 RDS(on)2 VDS=10V, ID=18A ID=18A, VGS=10V 17 23 mΩ ID=9A, VGS=4.5V 23 33 mΩ RDS(on)3 ID=5A, VGS=4V 25 37 mΩ Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Turn-ON Delay Time td(on) Rise Time tr Turn-OFF Delay Time td(off) Fall Time tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD S 1820 VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=35A pF 150 pF 100 pF 16 ns 110 ns 125 ns 87 ns 34.5 nC 6.5 nC 6.8 IS=35A, VGS=0V 0.96 nC 1.2 V Switching Time Test Circuit 10V 0V VDD=30V VIN ID=18A RL=1.67Ω VIN D PW=10μs D.C.≤1% VOUT G ATP212 P.G 50Ω S Ordering Information Device ATP212-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1507-2/7 ATP212 VGS=2.5V 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 45 ID=5A 9A 35 18A 30 25 20 15 10 5 1 2 3 4 5 6 7 8 9 °C C 5° 10 = Tc 7 --2 75 °C 5 3 2 2 3 5 7 1.0 2 3 5 7 10 2 Drain Current, ID -- A 5 4.5 5.0 5.5 IT14742 5A I D= 0V, . 4 = VGS =9A , ID 4.5V = 18A VGS I D= , V 0 . =10 VGS 30 25 20 15 10 5 --25 0 25 50 75 100 125 150 IT14744 IS -- VSD VGS=0V Single pulse 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0 0.2 0.4 0.6 0.8 1.0 1.2 Diode Forward Voltage, VSD -- V 1.4 IT14746 Ciss, Coss, Crss -- VDS 5 VDD=30V VGS=10V f=1MHz 3 3 Ciss Ciss, Coss, Crss -- pF 2 2 td(off) 100 7 tf 5 tr 3 2 1000 7 5 3 2 Coss td(on) 100 10 7 0.1 4.0 Single pulse 35 IT14745 SW Time -- ID 7 Switching Time, SW Time -- ns 3 3.5 40 0.01 7 5 3 2 0.001 1.0 7 5 0.1 3.0 45 100 7 5 3 2 Source Current, IS -- A Forward Transfer Admittance, | yfs | -- S 25 2 2.5 Case Temperature, Tc -- °C VDS=10V Single pulse 3 2.0 50 IT14743 | yfs | -- ID 1.5 RDS(on) -- Tc 0 --50 10 11 12 13 14 15 16 Gate-to-Source Voltage, VGS -- V 7 1.0 Gate-to-Source Voltage, VGS -- V 0 0 0.5 55 Tc=25°C Single pulse 40 0 IT14741 RDS(on) -- VGS 50 0 2.0 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 10 5°C 25°C --25° C 0.2 55 5 20 Tc= 7 0 Drain-to-Source Voltage, VDS -- V 5 30 25 ° 5 40 Tc= 75° C C 10 0 Tc= --25 °C 75° C V 3.0V --25 ° 15 50 C 20 VDS=10V Single pulse 3.5V Drain Current, ID -- A 25 ID -- VGS 60 4.5 16.0 10.0V V 8.0V 6.0V Drain Current, ID -- A 30 4.0 V Tc=25°C Single pulse 25° C ID -- VDS 35 Crss 7 2 3 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14747 5 0 10 20 30 40 50 Drain-to-Source Voltage, VDS -- V 60 IT14748 No. A1507-3/7 ATP212 VGS -- Qg 10 7 6 5 4 5 10 15 20 25 30 PD -- Tc 45 35 25 20 15 10 5 0 60 80 100 Tc=25°C Single pulse 2 3 5 7 1.0 120 Case Temperature, Tc -- °C 140 160 IT14751 2 3 5 7 10 2 3 5 7 100 IT14750 Drain-to-Source Voltage, VDS -- V Avalanche Energy derating factor -- % 30 40 Operation in this area is limited by RDS(on). EAS -- Ta 120 35 20 s IT14749 40 0 0m 0.1 0.1 40 ms μs on ati er 3 2 10 0μ s 10 3 2 1 10 10 10 7 5 1.0 7 5 Total Gate Charge, Qg -- nC Allowable Power Dissipation, PD -- W 3 2 2 0 ID=35A op 3 PW≤10μs DC Drain Current, ID -- A 8 0 IDP=105A 100 7 5 s 1m Gate-to-Source Voltage, VGS -- V 9 ASO 3 2 VDS=30V ID=35A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1507-4/7 ATP212 Taping Specification ATP212-TL-H No. A1507-5/7 ATP212 Outline Drawing ATP212-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1507-6/7 ATP212 Note on usage : Since the ATP212 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. ON Semiconductor and the ON logo are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. 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