Ordering number : ENA1405A ATP404 N-Channel Power MOSFET http://onsemi.com 60V, 95A, 7.2mΩ, ATPAK Features • • ON-resistance RDS(on)1=5.5mΩ (typ.) 4.5V drive • • Input capacitance Ciss=6400pF (typ.) Halogen free compliance Specifications Absolute Maximum Ratings at Ta=25°C Parameter Symbol Drain-to-Source Voltage Conditions Ratings VDSS VGSS Gate-to-Source Voltage Drain Current (DC) ID IDP Drain Current (Pulse) Allowable Power Dissipation Unit 60 PW≤10μs, duty cycle≤1% V 95 A 380 A 70 W Channel Temperature PD Tch 150 °C Storage Temperature Tstg --55 to +150 °C Avalanche Energy (Single Pulse) *1 EAS IAV 214 mJ 48 A Avalanche Current *2 Tc=25°C V ±20 Note : *1 VDD=30V, L=100μH, IAV=48A *2 L≤100μH, Single pulse Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Package Dimensions Product & Package Information unit : mm (typ) 7057-001 • Package : ATPAK • JEITA, JEDEC :• Minimum Packing Quantity : 3,000 pcs./reel ATP404-TL-H 1.5 6.5 0.4 0.4 0.5 4 Packing Type: TL 4.6 2.6 Marking ATP404 TL 6.05 4.6 9.5 7.3 LOT No. Electrical Connection 3 0.6 0.4 2.3 0.1 2.3 0.55 0.7 0.5 1 0.8 1.7 2,4 2 Semiconductor Components Industries, LLC, 2013 July, 2013 1 : Gate 2 : Drain 3 : Source 4 : Drain ATPAK 1 3 61312 TKIM/12109QA MSIM TC-00001833 No. A1405-1/7 ATP404 Electrical Characteristics at Ta=25°C Parameter Symbol Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Static Drain-to-Source On-State Resistance Unit max IGSS VGS(off) | yfs | VGS=±16V, VDS=0V VDS=10V, ID=1mA VDS=10V, ID=48A 100 RDS(on)1 ID=48A, VGS=10V 5.5 7.2 mΩ RDS(on)2 ID=48A, VGS=4.5V 7.5 10.5 mΩ Output Capacitance Coss Reverse Transfer Capacitance Turn-ON Delay Time 60 V 1.2 10 μA ±10 μA 2.6 V S 6400 pF 490 pF Crss 380 pF td(on) tr 53 ns 640 ns 380 ns Fall Time td(off) tf Total Gate Charge Qg Gate-to-Source Charge Qgs Gate-to-Drain “Miller” Charge Qgd Diode Forward Voltage VSD VDS=20V, f=1MHz See specified Test Circuit. VDS=30V, VGS=10V, ID=95A Switching Time Test Circuit 10V 0V typ ID=1mA, VGS=0V VDS=60V, VGS=0V Ciss Turn-OFF Delay Time min V(BR)DSS IDSS Input Capacitance Rise Time Ratings Conditions 520 ns 120 nC 25 nC 25 IS=95A, VGS=0V nC 0.95 1.2 V Avalanche Resistance Test Circuit VDD=30V VIN L ID=48A RL=0.625Ω VIN D PW=10μs D.C.≤1% ≥50Ω VOUT ATP404 10V 0V G VDD 50Ω ATP404 P.G 50Ω S Ordering Information Device ATP404-TL-H Package Shipping memo ATPAK 3,000pcs./reel Pb Free and Halogen Free No. A1405-2/7 ATP404 180 4.5V 120 100 80 60 1.0 1.5 10 8 Tc=75°C 6 25°C --25°C 2 3 4 5 6 7 8 9 Gate-to-Source Voltage, VGS -- V 100 7 5 3 C 5° 2 = Tc 10 7 5 --2 75 °C 3 2 3 5 7 1.0 2 3 5 7 10 2 3 Drain Current, ID -- A 5.0 5.5 IT14378 10 A =48 , ID V 5 . =4 A VGS =48 , ID V 0 . =10 VGS 8 6 4 2 --25 0 25 50 75 100 125 150 IT14380 IS -- VSD VGS=0V Single pulse 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 IT14382 Ciss, Coss, Crss -- VDS f=1MHz 10000 Ciss, Coss, Crss -- pF 7 td(off) 5 3 2 tf 100 tr 7 td(on) 5 Ciss 7 5 3 2 1000 7 Coss 5 Crss 3 3 3 4.5 12 2 1000 2 4.0 Diode Forward Voltage, VSD -- V SW Time -- ID 2 0.1 3.5 14 3 2 100 7 5 3 2 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 5 7 100 2 IT14381 VDD=30V VGS=10V 3.0 Case Temperature, Tc -- °C 2 1.0 7 5 0.1 2.5 Single pulse Source Current, IS -- A °C 25 2.0 RDS(on) -- Tc 0 --50 10 VDS=10V 2 1.5 16 IT14379 | yfs | -- ID 3 1.0 Cutoff Voltage, VGS(off) -- V 0 2 0.5 °C 25°C --25° C Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ ID=48A Single pulse 4 0 IT14377 RDS(on) -- VGS 12 0 2.0 Tc= 75 0.5 Static Drain-to-Source On-State Resistance, RDS(on) -- mΩ 0 14 Forward Transfer Admittance, | yfs | -- S 80 60 25 °C VGS=3.0V Drain-to-Source Voltage, VDS -- V Switching Time, SW Time -- ns 100 20 20 2 120 40 40 3 140 Tc= 75° C --25 °C Drain Current, ID -- A 160 140 0 VDS=10V C 75°C 8.0 160 Drain Current, ID -- A V 6.0 10 .0V 180 ID -- VGS(off) 200 25 ° V Tc=25°C Tc= --25° C ID -- VDS 200 5 7 1.0 2 3 5 7 10 Drain Current, ID -- A 2 3 5 7 100 IT14383 2 0 5 10 15 20 25 Drain-to-Source Voltage, VDS -- V 30 IT14384 No. A1405-3/7 ATP404 VGS -- Qg 10 9 8 Drain Current, ID -- A Gate-to-Source Voltage, VGS -- V 1000 7 5 3 2 VDS=30V ID=95A 7 6 5 4 3 1 50 0 100 150 Total Gate Charge, Qg -- nC PD -- Tc 60 50 40 30 20 10 0 20 40 60 80 100 100 7 5 3 2 10m s 10 7 5 3 2 120 Case Temperature, Tc -- °C 140 160 IT14387 1m DC 1.0 7 5 3 2 0m s op er 2 3 10μ s 100 μs s 10 Operation in this area is limited by RDS(on). ati on 2 5 7 10 3 5 7 100 IT14386 Drain-to-Source Voltage, VDS -- V EAS -- Ta 120 70 0 ID=95A IT14385 Avalanche Energy derating factor -- % Allowable Power Dissipation, PD -- W 80 PW≤10μs 0.1 7 5 3 Tc=25°C 2 Single pulse 0.01 2 3 5 7 1.0 0.1 2 0 ASO IDP=380A 100 80 60 40 20 0 0 25 50 75 100 125 Ambient Temperature, Ta -- °C 150 175 IT10478 No. A1405-4/7 ATP404 Taping Specification ATP404-TL-H No. A1405-5/7 ATP404 Outline Drawing ATP404-TL-H Land Pattern Example Mass (g) Unit 0.266 mm * For reference Unit: mm 6.7 6.5 1.6 2 1.5 2.3 2.3 No. A1405-6/7 ATP404 Note on usage : Since the ATP404 is a MOSFET product, please avoid using this device in the vicinity of highly charged objects. 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