VS-30L30CT-1PbF Vishay Semiconductors Schottky Rectifier, 2 x 15 A FEATURES Base common cathode 2 • • • • • 2 1 Common 3 Anode cathode Anode TO-262 • • PRODUCT SUMMARY Package TO-262AA IF(AV) 2 x 15 A VR 30 V • • • VF at IF 0.37 V IRM 350 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 15 mJ 150 °C TJ operation Center tap configuration Very low forward voltage drop High frequency operation High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Guard ring for enhanced ruggedness and long term reliability Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Halogen-free according to IEC 61249-2-21 definition Compliant to RoHS directive 2002/95/EC AEC-Q101 qualified DESCRIPTION This center tap Schottky rectifier has been optimized for very low forward voltage drop, with moderate leakage. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) Rectangular waveform VRRM VALUES UNITS 30 A 30 VF 15 Apk, TJ = 125 °C (per leg) TJ Range V 0.37 - 55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-30L30CT-1PbF UNITS 30 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current SYMBOL per device per leg IF(AV) TEST CONDITIONS 50 % duty cycle at TC = 140 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied VALUES UNITS 30 15 1450 A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 2 A, L = 7.5 mH 15 mJ IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 2 A Repetitive avalanche current per leg Document Number: 94196 Revision: 05-Oct-10 10 ms sine or 6 ms rect. pulse For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 220 www.vishay.com 1 VS-30L30CT-1PbF Schottky Rectifier, 2 x 15 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 15 A Maximum forward voltage drop per leg VFM (1) TJ = 25 °C 30 A 15 A TJ = 125 °C 30 A Maximum reverse leakage current per leg IRM (1) TJ = 25 °C VR = Rated VR TJ = 125 °C Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance per leg LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.46 0.57 V 0.37 0.50 1.50 350 mA 1500 pF 8.0 nH 10 000 V/μs VALUES UNITS - 55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg 1.5 RthJC Maximum thermal resistance, junction to case per package DC operation Approximate weight Mounting torque Marking device www.vishay.com 2 °C/W 0.8 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Case style TO-262 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 30L30CT-1 Document Number: 94196 Revision: 05-Oct-10 VS-30L30CT-1PbF 1000 Vishay Semiconductors 1000 TJ = 150 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 2 x 15 A 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 100 TJ = 125 °C TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 1 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 5 0 10 15 25 20 30 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 10 000 TJ = 25 °C 1000 100 0 5 10 15 20 25 30 35 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 1 PDM 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.001 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94196 Revision: 05-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-30L30CT-1PbF Schottky Rectifier, 2 x 15 A 10 150 RMS limit 145 Average Power Loss (W) Allowable Case Temperature (°C) Vishay Semiconductors DC 140 Square wave (D = 0.50) 135 8 DC 6 DC = 0.20 DC = 0.25 DC = 0.33 DC = 0.50 DC = 0.75 4 2 See note (1) 0 130 5 0 10 15 20 25 5 0 10 15 20 25 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non-RepetitiveSurge Current (A) IF(AV) - Average Forward Current (A) 10 000 At any rated load condition and with rated VRRM applied following surge 1000 100 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) Note (1) Formula used: T = T - Pd x R C J thJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6) www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94196 Revision: 05-Oct-10 VS-30L30CT-1PbF Schottky Rectifier, 2 x 15 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 L 30 C T -1 PbF 1 2 3 4 5 6 7 8 1 - Vishay Semiconductors product 2 - Current rating (30 A) 3 - L = Low VF 4 - Voltage rating (30 = 30 V) 5 - Circuit configuration: C = Common cathode 6 - T = TO-220 7 - -1 = TO-262 8 - PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95419 Part marking information www.vishay.com/doc?95420 SPICE model www.vishay.com/doc?95287 Document Number: 94196 Revision: 05-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors TO-262 DIMENSIONS in millimeters and inches Modified JEDEC outline TO-262 (Datum A) (2) (3) E A A c2 B E A (3) L1 Seating plane D 1 2 3 C L2 B D1 (3) B C L (2) A c 3 x b2 3xb E1 A1 (3) Section A - A 2xe Plating 0.010 M A M B (4) b1, b3 Base metal Lead assignments Diodes 1. - Anode (two die)/open (one die) 2., 4. - Cathode 3. - Anode Lead tip SYMBOL c1 c (4) (b, b2) Section B - B and C - C Scale: None MILLIMETERS INCHES MIN. MAX. MIN. MAX. 0.190 NOTES A 4.06 4.83 0.160 A1 2.03 3.02 0.080 0.119 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 D1 6.86 8.00 0.270 0.315 3 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 e L 2.54 BSC 4 4 2 0.100 BSC 13.46 14.10 L1 - L2 3.56 0.530 0.555 1.65 - 0.065 3.71 0.140 0.146 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 Document Number: 95419 Revision: 04-Oct-10 4 (4) (5) (6) 3 Dimension b1 and c1 apply to base metal only Controlling dimension: inches Outline conform to JEDEC TO-262 except A1 (maximum), b (minimum) and D1 (minimum) where dimensions derived the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1