VS-48CTQ060PbF Vishay Semiconductors Schottky Rectifier, 2 x 20 A FEATURES Base 2 common cathode Anode TO-220AB • Low forward voltage drop • High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Anode 2 1 Common 3 cathode • Guard ring for enhanced ruggedness and long term reliability • 150 °C TJ operation • Center tap configuration • High frequency operation PRODUCT SUMMARY Package TO-220AB • Compliant to RoHS directive 2002/95/EC IF(AV) 2 x 20 A • Designed and qualified for industrial level VR 60 V VF at IF 0.58 V IRM 89 mA at 125 °C TJ max. 150 °C Diode variation Common cathode EAS 13 mJ DESCRIPTION This center tap Schottky rectifier has been optimized for low reverse leakage at high temperature. The proprietary barrier technology allows for reliable operation up to 150 °C junction temperature. Typical applications are in switching power supplies, converters, freewheeling diodes, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS Rectangular waveform IF(AV) VRRM IFSM tp = 5 μs sine VF 20 Apk, TJ = 125 °C (per leg) TJ Range VALUES UNITS 40 A 60 V 1000 A 0.58 V - 55 to 150 °C VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-48CTQ060PbF UNITS 60 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER Maximum average forward current See fig. 5 SYMBOL TEST CONDITIONS IF(AV) 50 % duty cycle at TC = 111 °C, rectangular waveform UNITS 20 per leg per device 40 Following any rated load condition and with rated VRRM applied Maximum peak one cycle non-repetitive surge current per leg See fig. 7 IFSM Non-repetitive avalanche energy per leg EAS TJ = 25 °C, IAS = 1.50 A, L = 11.5 mH IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical Repetitive avalanche current per leg VALUES 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse A 1000 260 13 mJ 1.50 A * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 94229 Revision: 22-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 VS-48CTQ060PbF Schottky Rectifier, 2 x 20 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 20 A Maximum forward voltage drop per leg See fig. 1 VFM (1) TJ = 25 °C 40 A 20 A TJ = 125 °C 40 A Maximum reverse leakage current per leg See fig. 2 IRM (1) Threshold voltage VF(TO) TJ = 25 °C VR = Rated VR TJ = 125 °C TJ = TJ maximum Forward slope resistance rt Maximum junction capacitance per leg CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance per leg LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.61 0.83 V 0.58 0.75 2 mA 89 0.37 V 8.26 m 1220 pF 8.0 nH 10 000 V/μs VALUES UNITS - 55 to 150 °C Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TEST CONDITIONS TJ, TStg Maximum thermal resistance, junction to case per leg 2.0 RthJC Maximum thermal resistance, junction to case per package DC operation Typical thermal resistance, case to heatsink RthCS Mounting surface, smooth and greased Approximate weight Mounting torque Marking device www.vishay.com 2 °C/W 1.0 0.50 2 g 0.07 oz. minimum 6 (5) kgf · cm maximum 12 (10) (lbf · in) Case style TO-220AB For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 48CTQ060 Document Number: 94229 Revision: 22-Oct-10 VS-48CTQ060PbF Vishay Semiconductors 1000 1000 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 2 x 20 A 100 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 1 TJ = 150 °C 100 TJ = 125 °C 10 TJ = 100 °C TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.001 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 2.2 10 20 30 50 40 60 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 10 000 1000 TJ = 25 °C 100 0 10 20 30 40 50 60 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 10 1 0.1 Single pulse (thermal resistance) 0.01 0.00001 0.0001 0.001 PDM D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94229 Revision: 22-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-48CTQ060PbF Schottky Rectifier, 2 x 20 A Vishay Semiconductors 20 140 Average Power Loss (W) Allowable Case Temperature (°C) 150 DC 130 120 Square wave (D = 0.50) 80 % rated VR applied 110 100 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 15 10 RMS limit DC 5 See note (1) 0 90 0 5 10 15 25 20 5 0 30 10 15 20 25 30 Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current (Per Leg) Fig. 6 - Forward Power Loss Characteristics (Per Leg) IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) IF(AV) - Average Forward Current (A) 1000 At any rated load condition and with rated VRRM applied following surge 100 10 100 10 000 1000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current (Per Leg) L D.U.T. IRFP460 Rg = 25 Ω Current monitor High-speed switch Freewheel diode + Vd = 25 V 40HFL40S02 Fig. 8 - Unclamped Inductive Test Circuit Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 10 V www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94229 Revision: 22-Oct-10 VS-48CTQ060PbF Schottky Rectifier, 2 x 20 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 48 C T Q 1 2 3 4 5 060 PbF 6 1 - Vishay Semiconductors product 2 - Current rating (40 A) 3 - Circuit configuration: 7 C = Common cathode 4 - Package: T = TO-220 5 - Schottky “Q” series 6 - Voltage rating (060 = 60 V) 7 - None = Standard production PbF = Lead (Pb)-free Tube standard pack quantity: 50 pieces LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95222 Part marking information www.vishay.com/doc?95225 SPICE model www.vishay.com/doc?95424 Document Number: 94229 Revision: 22-Oct-10 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay Semiconductors TO-220AB DIMENSIONS in millimeters and inches A (6) E E2 ØP 0.014 M B A M (7) A B Seating plane A Thermal pad (E) A1 1 Q (6) D (H1) H1 (7) C D2 (6) (6) D 2 3 D L1 (2) C Detail B D1 3xb 1 2 3 3 x b2 Detail B C E1 (6) L Base metal View A - A c Plating c1 (4) c A 2x e A2 e1 (b, b2) b1, b3 (4) Section C - C and D - D 0.015 M B A M Lead assignments Lead tip Diodes Conforms to JEDEC outline TO-220AB 1. - Anode/open 2. - Cathode 3. - Anode SYMBOL MILLIMETERS MIN. MAX. 4.25 4.65 1.14 1.40 2.56 2.92 0.69 1.01 0.38 0.97 1.20 1.73 1.14 1.73 0.36 0.61 0.36 0.56 14.85 15.25 8.38 9.02 11.68 12.88 INCHES MIN. MAX. 0.167 0.183 0.045 0.055 0.101 0.115 0.027 0.040 0.015 0.038 0.047 0.068 0.045 0.068 0.014 0.024 0.014 0.022 0.585 0.600 0.330 0.355 0.460 0.507 NOTES A A1 A2 b b1 4 b2 b3 4 c c1 4 D 3 D1 D2 6 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension and finish uncontrolled in L1 (3) Dimension D, D1 and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (4) Dimension b1, b3 and c1 apply to base metal only (5) Controlling dimensions: inches (6) Thermal pad contour optional within dimensions E, H1, D2 and E1 Document Number: 95222 Revision: 08-Mar-11 SYMBOL E E1 E2 e e1 H1 L L1 ØP Q (7) (8) MILLIMETERS MIN. MAX. 10.11 10.51 6.86 8.89 0.76 2.41 2.67 4.88 5.28 6.09 6.48 13.52 14.02 3.32 3.82 3.54 3.73 2.60 3.00 90° to 93° INCHES MIN. MAX. 0.398 0.414 0.270 0.350 0.030 0.095 0.105 0.192 0.208 0.240 0.255 0.532 0.552 0.131 0.150 0.139 0.147 0.102 0.118 90° to 93° NOTES 3, 6 6 7 6, 7 2 Dimensions E2 x H1 define a zone where stamping and singulation irregularities are allowed Outline conforms to JEDEC TO-220, except A2 (maximum) and D2 (minimum) where dimensions are derived from the actual package outline For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 11-Mar-11 www.vishay.com 1