VS-30BQ015PbF Vishay Semiconductors Schottky Rectifier, 3.0 A FEATURES Cathode • • • • • Anode SMC • PRODUCT SUMMARY • Package SMC IF(AV) 3A VR 15 V • • VF at IF 0.3 V IRM 50 mA at 100 °C TJ max. 125 °C Diode variation Single die EAS 1.5 mJ 125 °C TJ operation (VR < 5 V) Optimized for OR-ing applications Ultralow forward voltage drop High frequency operation Guard ring for enhanced ruggedness and long term reliability High purity, high temperature epoxy encapsulation for enhanced mechanical strength and moisture resistance Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C Compliant to RoHS Directive 2002/95/EC Designed and qualified for industrial level DESCRIPTION The VS-30BQ015PbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and very small foot prints on PC boards. The proprietary barrier technology allows for reliable operation up to 125 °C junction temperature. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS VALUES UNITS Rectangular waveform 3.0 A 15 V IFSM tp = 5 μs sine 650 A VF 1.0 Apk, TJ = 75 °C TJ Range IF(AV) VRRM 0.30 V - 55 to 125 °C VOLTAGE RATINGS PARAMETER Maximum DC reverse voltage Maximum working peak reverse voltage SYMBOL VS-30BQ015PbF VR 15 VRWM 25 UNITS V ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Maximum average forward current IF(AV) TEST CONDITIONS VALUES 50 % duty cycle at TL = 83 °C, rectangular waveform 3.0 50 % duty cycle at TL = 78 °C, rectangular waveform 4.0 5 μs sine or 3 μs rect. pulse Following any rated load condition and with rated VRRM applied 650 UNITS A Maximum peak one cycle non-repetitive surge current IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 0.5 A, L = 12 mH 1.5 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 0.5 A Document Number: 94178 Revision: 23-Feb-11 10 ms sine or 6 ms rect. pulse For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 75 www.vishay.com 1 VS-30BQ015PbF Schottky Rectifier, 3.0 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop VFM (1) TJ = 25 °C 6A 3A TJ = 75 °C 6A Maximum reverse leakage current IRM (1) TJ = 25 °C VR = Rated VR TJ = 100 °C Maximum junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C Typical series inductance LS Measured lead to lead 5 mm from package body Maximum voltage rate of change dV/dt Rated VR VALUES UNITS 0.35 0.40 V 0.30 0.35 4 mA 50 1120 pF 3.0 nH 10 000 V/μs VALUES UNITS Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS Maximum junction temperature range TJ (1) - 55 to 125 Maximum storage temperature range TStg - 55 to 150 Maximum thermal resistance, junction to lead RthJL (2) Maximum thermal resistance, junction to ambient RthJA 12 DC operation °C/W 46 Approximate weight Marking device °C Case style SMC (similar to DO-214AB) 0.24 g 0.008 oz. V3C Notes (1) (2) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA Mounted 1" square PCB www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94178 Revision: 23-Feb-11 VS-30BQ015PbF 10 Vishay Semiconductors 100 IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 3.0 A TJ = 100 °C TJ = 75 °C TJ = 25 °C 1 TJ = 100 °C 10 TJ = 75 °C 1 TJ = 50 °C 0.1 TJ = 25 °C 0.01 0.1 0 0.1 0.2 0.3 0 0.5 0.4 3 6 9 12 15 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics (Per Leg) Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage (Per Leg) CT - Juction Capacitance (pF) 1000 TJ = 25 °C 100 0 4 8 12 16 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) 100 10 PDM 1 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 t1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 0.01 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Document Number: 94178 Revision: 23-Feb-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-30BQ015PbF Schottky Rectifier, 3.0 A 1.5 110 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 DC 100 90 Average Power Loss (W) Allowable Lead Temperature (°C) Vishay Semiconductors 80 70 Square wave (D = 0.50) 80 % rated VR applied 60 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 1.0 RMS limit DC 0.5 See note (1) 0 50 0 1 2 3 4 0 5 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 IF(AV) - Average Forward Current (A) Fig. 5 - Maximum Average Forward Current vs. Allowable Lead Temperature Fig. 6 - Maximum Average Forward Dissipation vs. Average Forward Current IFSM - Non-Repetitive Surge Current (A) IF(AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Peak Surge Forward Current vs. Pulse Duration Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94178 Revision: 23-Feb-11 VS-30BQ015PbF Schottky Rectifier, 3.0 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 B Q 015 TR PbF 1 2 3 4 5 6 7 1 - HPP product suffix 2 - Current rating 3 - B = Single lead diode 4 - Q = Schottky “Q” series 5 - Voltage rating (015 = 15 V) 6 - None = Box (1000 pieces) TR = Tape and reel (3000 pieces) 7 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95023 Part marking information www.vishay.com/doc?95029 Packaging information SPICE model Document Number: 94178 Revision: 23-Feb-11 Tape and reel www.vishay.com/doc?95034 Bulk www.vishay.com/doc?95397 www.vishay.com/doc?95439 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay High Power Products SMC DIMENSIONS in millimeters (inches) 2.75 (0.108) 3.15 (0.124) 1 5.59 (0.220) 6.22 (0.245) 1 2 2 Polarity Part number 6.60 (0.260) 7.11 (0.280) 4.69 MAX. (0.185 MAX.) 0.152 (0.006) 0.305 (0.012) 3.20 MIN. (0.126 MIN.) 2.00 (0.079) 2.62 (0.103) 0.76 (0.030) 1.52 (0.060) Document Number: 95023 Revision: 05-Nov-08 0.102 (0.004) 0.203 (0.008) 7.75 (0.305) 8.13 (0.320) 1.52 MIN. (0.060 MIN.) 0.320 REF. Soldering pad For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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