VS-30WQ04FNPbF Vishay Semiconductors Schottky Rectifier, 3.5 A FEATURES Base cathode 4, 2 • Popular D-PAK outline • Small foot print, surface mountable • Low forward voltage drop 1 Anode D-PAK (TO-252AA) • High frequency operation 3 Anode • Guard ring for enhanced ruggedness and long term reliability • Compliant to RoHS Directive 2002/95/EC PRODUCT SUMMARY Package D-PAK (TO-252AA) IF(AV) 3.5 A VR 40 V VF at IF See Electrical table IRM 24 mA at 125 °C TJ max. 150 °C Diode variation Single die EAS 8 mJ • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C DESCRIPTION The VS-30WQ04FNPbF surface mount Schottky rectifier has been designed for applications requiring low forward drop and small foot prints on PC board. Typical applications are in disk drives, switching power supplies, converters, freewheeling diodes, battery charging, and reverse battery protection. MAJOR RATINGS AND CHARACTERISTICS SYMBOL CHARACTERISTICS IF(AV) VALUES UNITS 3.5 A 40 V Rectangular waveform VRRM IFSM tp = 5 μs sine 500 A VF 3 Apk, TJ = 125 °C 0.49 V - 40 to 150 °C TJ VOLTAGE RATINGS PARAMETER SYMBOL Maximum DC reverse voltage VS-30WQ04FNPbF UNITS 40 V VR Maximum working peak reverse voltage VRWM ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS Maximum average forward current See fig. 5 IF(AV) Maximum peak one cycle non-repetitive surge current See fig. 7 IFSM Non-repetitive avalanche energy EAS TJ = 25 °C, IAS = 1 A, L = 16 mH 8.0 mJ Repetitive avalanche current IAR Current decaying linearly to zero in 1 μs Frequency limited by TJ maximum VA = 1.5 x VR typical 1.0 A Document Number: 94198 Revision: 14-Jan-11 50 % duty cycle at TC = 135 °C, rectangular waveform 5 μs sine or 3 μs rect. pulse 10 ms sine or 6 ms rect. pulse Following any rated load condition and with rated VRRM applied For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] 3.5 500 A 80 www.vishay.com 1 VS-30WQ04FNPbF Schottky Rectifier, 3.5 A Vishay Semiconductors ELECTRICAL SPECIFICATIONS PARAMETER SYMBOL TEST CONDITIONS 3A Maximum forward voltage drop See fig. 1 VFM (1) 3A IRM (1) Threshold voltage VF(TO) 0.67 0.62 2 VR = Rated VR TJ = 125 °C V 0.49 TJ = 125 °C TJ = 25 °C UNITS 0.53 TJ = 25 °C 6A 6A Maximum reverse leakage current See fig. 2 VALUES mA 24 TJ = TJ maximum 0.34 V 37.33 m Forward slope resistance rt Typical junction capacitance CT VR = 5 VDC (test signal range 100 kHz to 1 MHz), 25 °C 189 pF Typical series inductance LS Measured lead to lead 5 mm from package body 5.0 nH 10 000 V/μs VALUES UNITS - 40 to 150 °C 4.7 °C/W 0.3 g Maximum voltage rate of change dV/dt Rated VR Note (1) Pulse width < 300 μs, duty cycle < 2 % THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Maximum junction and storage temperature range TJ (1), TStg Maximum thermal resistance, junction to case RthJC TEST CONDITIONS DC operation See fig. 4 Approximate weight Marking device 0.01 Case style D-PAK (similar to TO-252AA) oz. 30WQ04FN Note (1) dP tot 1 ------------- < -------------- thermal runaway condition for a diode on its own heatsink dT J R thJA www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94198 Revision: 14-Jan-11 VS-30WQ04FNPbF Vishay Semiconductors 100 100 TJ = 150 °C IR - Reverse Current (mA) IF - Instantaneous Forward Current (A) Schottky Rectifier, 3.5 A 10 TJ = 150 °C TJ = 125 °C TJ = 25 °C 10 TJ = 125 °C TJ = 100 °C 1 TJ = 75 °C 0.1 TJ = 50 °C 0.01 TJ = 25 °C 0.001 1 0 0.4 0.8 1.2 1.6 2.0 2.4 0 2.8 5 10 15 20 25 30 35 40 VR - Reverse Voltage (V) VFM - Forward Voltage Drop (V) Fig. 1 - Maximum Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs. Reverse Voltage CT - Junction Capacitance (pF) 1000 TJ = 25 °C 100 10 0 5 10 15 20 25 30 35 40 45 VR - Reverse Voltage (V) ZthJC - Thermal Impedance (°C/W) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage 10 PDM 1 D = 0.75 D = 0.50 D = 0.33 D = 0.25 D = 0.20 Single pulse (thermal resistance) 0.1 0.00001 0.0001 0.001 0.01 t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.1 1 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics Document Number: 94198 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 VS-30WQ04FNPbF Schottky Rectifier, 3.5 A 3.0 155 D = 0.20 D = 0.25 D = 0.33 D = 0.50 D = 0.75 150 145 Average Power Loss (W) Allowable Case Temperature (°C) Vishay Semiconductors DC 140 135 Square wave (D = 0.50) 80 % rated VR applied 130 125 120 115 2.5 2.0 RMS limit 1.5 1.0 DC 0.5 See note (1) 0 110 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 IF (AV) - Average Forward Current (A) Fig. 5 - Maximum Allowable Case Temperature vs. Average Forward Current Fig. 6 - Forward Power Loss Characteristics IFSM - Non- Repetitive Surge Current (A) IF (AV) - Average Forward Current (A) 1000 100 At any rated load condition and with rated VRRM applied following surge 10 10 100 1000 10 000 tp - Square Wave Pulse Duration (µs) Fig. 7 - Maximum Non-Repetitive Surge Current Note (1) Formula used: T = T - (Pd + Pd C J REV) x RthJC; Pd = Forward power loss = IF(AV) x VFM at (IF(AV)/D) (see fig. 6); PdREV = Inverse power loss = VR1 x IR (1 - D); IR at VR1 = 80 % rated VR www.vishay.com 4 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 94198 Revision: 14-Jan-11 VS-30WQ04FNPbF Schottky Rectifier, 3.5 A Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- 30 W Q 04 FN 1 2 3 4 5 6 1 - Vishay Semiconductors product 2 - Current rating (3.5 A) 3 - Package identifier: TRL PbF 7 8 W = D-PAK 4 - Schottky “Q” series 5 - Voltage rating (04 = 40 V) 6 - FN = TO-252AA (D-PAK) 7 - None = Tube (50 pieces) TR = Tape and reel TRL = Tape and reel (left oriented) TRR = Tape and reel (right oriented) 8 - PbF = Lead (Pb)-free LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95016 Part marking information www.vishay.com/doc?95059 Packaging information www.vishay.com/doc?95033 SPICE model www.vishay.com/doc?95288 Document Number: 94198 Revision: 14-Jan-11 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 5 Outline Dimensions Vishay High Power Products D-PAK (TO-252AA) DIMENSIONS in millimeters and inches (5) A E b3 Pad layout C A (3) 0.010 M C A B c2 A L3 (3) Ø1 4 Ø2 4 B Seating plane H D (5) 1 2 0.245 MIN. (6.23) D1 L4 3 3 (2) L5 2 b 1 A c b2 0.06 MIN. (1.524) 0.010 M C A B 2x e 0.093 (2.38) 0.085 (2.18) (L1) Detail “C” Rotated 90 °CW Scale: 20:1 H (7) Lead tip C Gauge plane L2 MILLIMETERS MIN. 0.488 (12.40) 0.409 (10.40) 0.089 MIN. (2.28) Detail “C” SYMBOL 0.265 MIN. (6.74) E1 INCHES MAX. MIN. MAX. C Seating plane C Ø L NOTES A1 SYMBOL MILLIMETERS MIN. MAX. MAX. A 2.18 2.39 0.086 0.094 e A1 - 0.13 - 0.005 H 9.40 10.41 0.370 0.410 b 0.64 0.89 0.025 0.035 L 1.40 1.78 0.055 0.070 b2 0.76 1.14 0.030 0.045 L1 3 2.29 BSC INCHES MIN. 2.74 BSC L2 0.51 BSC NOTES 0.090 BSC 0.108 REF. b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 L3 0.89 1.27 0.035 0.020 BSC 0.050 c2 0.46 0.89 0.018 0.035 L4 - 1.02 - 0.040 D 5.97 6.22 0.235 0.245 5 L5 1.14 1.52 0.045 0.060 D1 5.21 - 0.205 - 3 Ø 0° 10° 0° 10° E 6.35 6.73 0.250 0.265 5 Ø1 0° 15° 0° 15° E1 4.32 - 0.170 - 3 Ø2 25° 35° 25° 35° 3 2 Notes (1) Dimensioning and tolerancing as per ASME Y14.5M-1994 (2) Lead dimension uncontrolled in L5 (3) Dimension D1, E1, L3 and b3 establish a minimum mounting surface for thermal pad (4) Section C - C dimension apply to the flat section of the lead between 0.13 and 0.25 mm (0.005 and 0.10") from the lead tip (5) Dimension D, and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body (6) Dimension b1 and c1 applied to base metal only (7) Datum A and B to be determined at datum plane H (8) Outline conforms to JEDEC outline TO-252AA Document Number: 95016 Revision: 04-Nov-08 For technical questions concerning discrete products, contact: [email protected] For technical questions concerning module products, contact: [email protected] www.vishay.com 1 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU. Revision: 12-Mar-12 1 Document Number: 91000