IRFZ44R, SiHFZ44R Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • • • • • • • Advanced Process Technology Ultra Low On-Resistance Available Dynamic dV/dt Rating RoHS* COMPLIANT 175 °C Operating Temperature Fast Switching Fully Avalanche Rated Drop in Replacement of the IRFZ44/SiHFZ44 for Linear/Audio Applications • Lead (Pb)-free Available 60 RDS(on) (Ω) VGS = 10 V 0.028 Qg (Max.) (nC) 67 Qgs (nC) 18 Qgd (nC) 25 Configuration Single D TO-220 DESCRIPTION Advanced Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S G D S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRFZ44RPbF SiHFZ44R-E3 IRFZ44R SiHFZ44R Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT VGS ± 20 50 36 200 1.0 100 150 4.5 - 55 to + 175 300 10 1.1 V Gate-Source Voltage Currente TC = 25 °C TC = 100 °C Continuous Drain VGS at 10 V Continuous Drain Current Pulsed Drain Currenta Linear Derating Factor Single Pulse Avalanche Energyb Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range for 10 s Soldering Recommendations (Peak Temperature)d Mounting Torque ID IDM EAS PD dV/dt TJ, Tstg 6-32 or M3 screw A W/°C mJ W V/ns °C lbf · in N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 25 V, starting TJ = 25 °C, L = 44 µH, RG = 25 Ω, IAS = 51 A (see fig. 12). c. ISD ≤ 51 A, dV/dt ≤ 250 A/µs, VDD ≤ VDS, TJ ≤ 175 °C. d. 1.6 mm from case. e. Current limited by the package, (die current = 51 A). * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 WORK-IN-PROGRESS www.vishay.com 1 IRFZ44R, SiHFZ44R Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage VDS VGS = 0 V, ID = 250 µA 60 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.060 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 60 V, VGS = 0 V - - 25 VDS = 48 V, VGS = 0 V, TJ = 150 °C - - 250 Drain-Source On-State Resistance Forward Transconductance RDS(on) gfs ID = 31 Ab VGS = 10 V VDS = 25 V, ID = 31 Ab µA - - 0.028 Ω 15 - - S - 1900 - - 920 - - 170 - - - 67 Dynamic Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss Total Gate Charge Qg Gate-Source Charge Qgs - - 18 Gate-Drain Charge Qgd - - 25 Turn-On Delay Time td(on) - 14 - tr - 110 - - 45 - - 92 - - 4.5 - - 7.5 - - - 50c - - 200 - - 2.5 Rise Time Turn-Off Delay Time Fall Time td(off) VGS = 0 V, VDS = 25 V, f = 1.0 MHz, see fig. 5 VGS = 10 V ID = 51 A, VDS = 48 V, see fig. 6 and 13b VDD = 30 V, ID = 51 A, RG = 9.1 Ω, RD = 0.55 Ω, see fig. 10b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D pF nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 51 A, VGS = 0 Vb TJ = 25 °C, IF = 51 A, dI/dt = 100 A/µsb V - 120 180 ns - 0.53 0.80 µC Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. c. Current limited by the package (die current = 51 A). www.vishay.com 2 Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 IRFZ44R, SiHFZ44R Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Fig. 3 - Typical Transfer Characteristics RDS(on) , Drain-to-Source On Resistance (Normalized) Fig. 1 - Typical Output Characteristics 2.5 ID = 51A 2.0 1.5 1.0 0.5 0.0 -60 -40 -20 0 VGS = 10V 20 40 60 80 100 120 140 160 180 TJ , Junction Temperature ( ° C) Fig. 2 - Typical Output Characteristics Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRFZ44R, SiHFZ44R Vishay Siliconix Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage 1000 ID , Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) 100 100us 1ms 10 1 10ms TC = 25 °C TJ = 175 °C Single Pulse 1 10 100 1000 VDS , Drain-to-Source Voltage (V) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage www.vishay.com 4 Fig. 8 - Maximum Safe Operating Area Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 IRFZ44R, SiHFZ44R Vishay Siliconix 60 LIMITED BY PACKAGE VGS 50 ID , Drain Current (A) RD VDS D.U.T. RG 40 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 30 Fig. 10a - Switching Time Test Circuit 20 VDS 90 % 10 0 25 50 75 100 125 150 10 % VGS 175 TC , Case Temperature ( ° C) td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response(Z thJC ) 10 1 D = 0.50 0.20 PDM 0.10 0.1 t1 0.05 t2 0.02 0.01 Notes: 1. Duty factor D = t 1 / t 2 2. Peak TJ = P DM x Z thJC + TC SINGLE PULSE (THERMAL RESPONSE) 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 t1 , Rectangular Pulse Duration (sec) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case VDS 15 V tp L VDS D.U.T RG IAS 20 V tp Driver + A - VDD IAS 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRFZ44R, SiHFZ44R EAS , Single Pulse Avalanche Energy (mJ) Vishay Siliconix 250 ID 21A 36A BOTTOM 51A TOP 200 150 100 50 0 25 50 75 100 125 150 175 Starting T J, Junction Temperature ( ° C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG VGS 12 V 0.2 µF 0.3 µF QGS + QGD D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 IRFZ44R, SiHFZ44R Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91292. Document Number: 91292 S-Pending-Rev. A, 17-Jul-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1