IRF830, SiHF830 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 500 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 38 • Fast Switching Qgs (nC) 5.0 • Ease of Paralleling 22 • Simple Drive Requirements Qgd (nC) Configuration Single COMPLIANT DESCRIPTION TO-220 Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. G S D RoHS* • Lead (Pb)-free Available D G Available • Repetitive Avalanche Rated 1.5 S N-Channel MOSFET ORDERING INFORMATION Package TO-220 IRF830PbF SiHF830-E3 IRF830 SiHF830 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS TC = 25 °C, unless otherwise noted PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 500 Gate-Source Voltage VGS ± 20 Continuous Drain Current Pulsed Drain VGS at 10 V TC = 25 °C TC = 100 °C Currenta ID IDM Linear Derating Factor UNIT V 4.5 2.9 A 18 0.59 W/°C mJ Single Pulse Avalanche Energyb EAS 280 Repetitive Avalanche Currenta IAR 4.5 A Repetitive Avalanche Energya EAR 7.4 mJ Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 74 W dV/dt 3.5 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 24 mH, RG = 25 Ω, IAS = 4.5 A (see fig. 12). c. ISD ≤ 4.5 A, dI/dt ≤ 75 A/µs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91063 S-81290-Rev. A, 16-Jun-08 www.vishay.com 1 IRF830, SiHF830 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.7 UNIT °C/W SPECIFICATIONS TJ = 25 °C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage VDS Temperature Coefficient VDS VGS = 0 V, ID = 250 µA 500 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.61 - V/°C VGS(th) VDS = VGS, ID = 250 µA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 500 V, VGS = 0 V - - 25 VDS = 400 V, VGS = 0 V, TJ = 125 °C - - 250 Gate-Source Threshold Voltage µA - - 1.5 Ω gfs VDS = 50 V, ID = 2.7 Ab 2.5 - - S Input Capacitance Ciss VGS = 0 V, - 610 - - 160 - Drain-Source On-State Resistance Forward Transconductance RDS(on) ID = 2.7 Ab VGS = 10 V Dynamic Output Capacitance Coss VDS = 25 V, Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 Total Gate Charge Qg Gate-Source Charge Qgs VGS = 10 V ID = 3.1 A, VDS = 400 V, see fig. 6 and 13b - 68 - - - 38 - - 5.0 Gate-Drain Charge Qgd - - 22 Turn-On Delay Time td(on) - 8.2 - Rise Time Turn-Off Delay Time Fall Time pF nC tr VDD = 250 V, ID = 3.1 A - 16 - td(off) RG = 12 Ω, RD = 79 Ω, see fig. 10b - 42 - - 16 - - 4.5 - - 7.5 - - - 4.5 - - 18 - - 1.6 V - 320 640 ns - 1.0 2.0 µC tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G S TJ = 25 °C, IS = 4.5 A, VGS = 0 Vb TJ = 25 °C, IF = 3.1 A, dI/dt = 100 A/µsb Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 µs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91063 S-81290-Rev. A, 16-Jun-08 IRF830, SiHF830 Vishay Siliconix TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 Top 4.5 V 150 °C ID, Drain Current (A) ID, Drain Current (A) 101 25 °C 100 10-1 20 µs Pulse Width TC = 25 °C 10-1 100 101 4 VDS, Drain-to-Source Voltage (V) 91063_01 20 µs Pulse Width TC = 150 °C 10-1 100 91063_02 4.5 V 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91063 S-81290-Rev. A, 16-Jun-08 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics 3.0 RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 100 VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V Top 5 VGS, Gate-to-Source Voltage (V) 91063_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C 101 20 µs Pulse Width VDS = 50 V 2.5 ID = 3.1 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 91063_04 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 IRF830, SiHF830 Vishay Siliconix VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Capacitance (pF) 1250 1000 Ciss 750 500 Coss 250 101 ISD, Reverse Drain Current (A) 1500 150 °C 25 °C 100 VGS = 0 V Crss 0 100 0.4 101 VDS, Drain-to-Source Voltage (V) 91063_05 91063_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 102 ID = 3.1 A VDS = 400 V 2 VDS = 250 V 12 VDS = 100 V 8 4 10 µs 10 5 100 µs 2 1 ms 1 5 10 ms 2 0.1 5 For test circuit see figure 13 0 0 91063_06 8 16 24 32 40 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 1.2 1.0 Operation in this area limited by RDS(on) 5 16 0.8 Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 20 0.6 VSD, Source-to-Drain Voltage (V) TC = 25 °C TJ = 150 °C Single Pulse 2 10-2 0.1 91063_08 2 5 1 2 5 10 2 5 102 2 5 103 2 5 104 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91063 S-81290-Rev. A, 16-Jun-08 IRF830, SiHF830 Vishay Siliconix RD VDS VGS 5.0 D.U.T. RG + - VDD ID, Drain Current (A) 4.0 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 3.0 Fig. 10a - Switching Time Test Circuit 2.0 1.0 VDS 90 % 0.0 25 50 75 100 125 150 TC, Case Temperature (°C) 91063_09 10 % VGS td(on) Fig. 9 - Maximum Drain Current vs. Case Temperature td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 0.2 PDM 0.1 0.05 0.1 10-2 t1 Single Pulse (Thermal Response) 0.02 0.01 10-5 10-4 10-3 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC 10-2 0.1 1 10 t1, Rectangular Pulse Duration (S) 91063_11 Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary tp to obtain required IAS V(BR)DSS VDS tp VDD D.U.T RG + - IAS V DD A VDS 10 V tp 0.01 Ω Fig. 12a - Unclamped Inductive Test Circuit Document Number: 91063 S-81290-Rev. A, 16-Jun-08 IAS Fig. 12b - Unclamped Inductive Waveforms www.vishay.com 5 IRF830, SiHF830 Vishay Siliconix EAS, Single Pulse Energy (mJ) 600 ID 2.0 A 2.8 A Bottom 4.5 A Top 500 400 300 200 100 VDD = 50 V 0 25 91063_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91063 S-81290-Rev. A, 16-Jun-08 IRF830, SiHF830 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - RG • • • • dV/dt controlled by RG Driver same type as D.U.T. ISD controlled by duty factor "D" D.U.T. - device under test Driver gate drive P.W. + Period D= + - VDD P.W. Period VGS = 10 V* D.U.T. ISD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage VDD Body diode forward drop Inductor current Ripple ≤ 5 % ISD * VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?91063. Document Number: 91063 S-81290-Rev. A, 16-Jun-08 www.vishay.com 7 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: 91000 Revision: 18-Jul-08 www.vishay.com 1