Product Overview

Product Overview
SCH1430: Power MOSFET, 20V, 125mΩ , 2A, Single N-Channel
For complete documentation, see the data sheet
Product Description
This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to
minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on
resistance requirements.
Features
Benefits
• Low On-Resistance
•
•
•
•
• Improves Efficiency by Reducing Conduction Losses,
Reduces Heat Dissipation
• Drive at Low Voltage
• ESD Resistance
• Environmental Consideration
• Board Space Saving
1.8V drive
ESD Diode-Protected Gate
Pb-Free, Halogen Free and RoHS compliance
Ultra small package SCH6 (1.6mm?1.6mm?0.56mmt)
Applications
End Products
• Load Switch
• Air Conditioner
Part Electrical Specifications
Product
SCH1430-TL-W
Compliance
Pb-free
Halide free
Status
Active
Cha
nne
l
Pol
arit
y
Con V(BR
figu )DSS
rati Min
(V)
on
NSin
Cha gle
nne
l
20
VGS
Ma
x
(V)
VGS
12
1.3
(th)
Ma
x
(V)
ID
Ma
x
(A)
PD
Ma
x
(W)
rDS(
rDS(
rDS(
on)
on)
on)
2
0.8
190
125
Ma
x@
VGS
=
2.5
V
(mΩ)
Ma
x@
VGS
=
4.5
V
(mΩ)
For more information please contact your local sales support at www.onsemi.com
Created on: 6/30/2016
Ma
x@
VGS
=
10
V
(mΩ)
Qg
Typ
@
VGS
=
4.5
V
(nC
)
Qg
Typ
@
VGS
=
10
V
(nC
)
Qgd
Typ
@
VGS
=
4.5
V
(nC
)
1.8
0.5
5
Qrr
Typ
(nC
)
Ciss Coss Crss Pac
Typ Typ Typ kag
(pF) (pF) (pF) e
Typ
e
128
28
21
SO
T563
/
SC
H-6