Product Overview SCH1430: Power MOSFET, 20V, 125mΩ , 2A, Single N-Channel For complete documentation, see the data sheet Product Description This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Benefits • Low On-Resistance • • • • • Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation • Drive at Low Voltage • ESD Resistance • Environmental Consideration • Board Space Saving 1.8V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm?1.6mm?0.56mmt) Applications End Products • Load Switch • Air Conditioner Part Electrical Specifications Product SCH1430-TL-W Compliance Pb-free Halide free Status Active Cha nne l Pol arit y Con V(BR figu )DSS rati Min (V) on NSin Cha gle nne l 20 VGS Ma x (V) VGS 12 1.3 (th) Ma x (V) ID Ma x (A) PD Ma x (W) rDS( rDS( rDS( on) on) on) 2 0.8 190 125 Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) 1.8 0.5 5 Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e 128 28 21 SO T563 / SC H-6