Product Overview SCH1435: Power MOSFET, 30V, 89mΩ , 3A, Single N-Channel For complete documentation, see the data sheet Product Description This low-profile high-power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and ultra low on resistance. This device is suitable for applications with low gate charge driving or ultra low on resistance requirements. Features Benefits • Low On-Resistance • • • • • Improves Efficiency by Reducing Conduction Losses. Reduces Heat Dissipation • Drive at Low Voltage • ESD Resistance • Environmental Consideration • Board Space Saving 1.8V drive ESD Diode-Protected Gate Pb-Free, Halogen Free and RoHS compliance Ultra small package SCH6 (1.6mm?1.6mm?0.56mmt) Applications • Load Switch Part Electrical Specifications Product SCH1435-TL-H Compliance Pb-free Status Pb-free Halide free Con V(BR figu )DSS rati Min (V) on VGS Ma x (V) VGS (th) Ma x (V) ID Ma x (A) PD Ma x (W) rDS( rDS( rDS( on) on) on) Ma x@ VGS = 2.5 V (mΩ) Ma x@ VGS = 4.5 V (mΩ) Qg Typ @ VGS = 4.5 V (nC ) Qg Typ @ VGS = 10 V (nC ) Qgd Typ @ VGS = 4.5 V (nC ) Qrr Typ (nC ) Ciss Coss Crss Pac Typ Typ Typ kag (pF) (pF) (pF) e Typ e NSin Cha gle nne l 30 12 1.3 3 0.8 126 89 3.5 0.9 3 265 35 28 SO T563 / SC H-6 NEW NSin Cha gle nne l 30 12 1.3 3 0.8 126 89 3.5 0.9 3 265 35 28 SO T563 / SC H-6 For more information please contact your local sales support at www.onsemi.com Created on: 6/30/2016 Ma x@ VGS = 10 V (mΩ) Active Halide free SCH1435-TL-W Cha nne l Pol arit y