VISHAY SI1025X

Si1025X
New Product
Vishay Siliconix
P-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V(BR)DSS(min) (V)
rDS(on) ()
VGS(th) (V)
ID (mA)
–60
4 @ VGS = –10 V
–1 to –3.0
–500
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories, Transistors, etc.
D Battery Operated Systems
D Power Supply Converter Circuits
D Solid-State Relays
High-Side Switching
Low On-Resistance: 4 Ω
Low Threshold: –2 V (typ)
Fast Switching Speed: 20 ns (typ)
Low Input Capacitance: 23 pF (typ)
Miniature Package
Gate-Source ESD Protection
Ease in Driving Switches
Low Offset Voltage
Low-Voltage Operation
High-Speed Circuits
Easily Driven Without Buffer
Small Board Area
SC-89
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
Marking Code: D
Top View
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 secs
Steady State
Drain-Source Voltage
VDS
–60
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_ a
TA = 85_C
Pulsed Drain Currentb
Operating Junction and Storage Temperature Range
Gate-Source ESD Rating (HBM, Method 3015)
ID
IS
TA = 25_C
TA = 85_C
PD
V
–190
–145
IDM
Continuous Source Current (diode conduction)a
Maximum Power Dissipationa
–200
TA = 25_C
Unit
–135
mA
–650
–450
–380
280
250
145
130
mW
TJ, Tstg
–55 to 150
_C
ESD
2000
V
Notes
a. Surface Mounted on FR4 Board.
b. Pulse width limited by maximum junction temperature.
Document Number: 71433
S-03518—Rev. A, 23-Apr-01
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Si1025X
New Product
Vishay Siliconix
SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
V(BR)DSS
VGS = 0 V, ID = –10 A
–60
VGS(th)
VDS = VGS, ID = –0.25 mA
–1
Typ
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
Gate-Body Leakage
Zero Gate Voltage Drain Current
On-State Drain Currenta
Drain-Source
On-Resistancea
Forward Transconductancea
Diode Forward
Voltagea
IGSS
IDSS
ID(on)
V
–3.0
VDS = 0 V, VGS = "10 V
"200
VDS = 0 V, VGS = "5 V
"100
VDS = –50 V, VGS = 0 V
–25
VDS = –50 V, VGS = 0 V, TJ = 85_C
–250
VDS = –10 V, VGS = –4.5 V
–50
VDS = –10 V, VGS = –10 V
–600
mA
VGS = –4.5 V, ID = –25 mA
8
VGS = –10 V, ID = –500 mA
4
VGS = –10 V, ID = –500 mA, TJ = 125_C
6
rDS(on)
gfs
VDS = –10 V, ID = –100 mA
VSD
IS = –200 mA, VGS = 0 V
nA
100
mS
–1.4
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
1.7
VDS = –30 V, VGS = –15 V, ID ^ –500 mA
0.26
Gate-Drain Charge
Qgd
0.46
Input Capacitance
Ciss
23
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = –25 V, VGS = 0 V, f = 1 MHz
10
nC
pF
5
Switchingb, c
Turn-On Time
tON
Turn-Off Time
tOFF
VDD = –25 V, RL = 150 ID ^ –165 mA, VGEN = –10 V
RG = 10 20
35
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. For DESIGN AID ONLY, not subject to production testing.
c. Switching time is essentially independent of operating temperature.
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Document Number: 71433
S-03518—Rev. A, 23-Apr-01
Si1025X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
1200
1.0
VGS = 10 V
TJ = –55_C
7V
8V
I D – Drain Current (mA)
I D – Drain Current (A)
0.8
6V
0.6
0.4
5V
900
25_C
125_C
600
300
0.2
4V
0.0
0
0
1
2
3
4
5
0
2
VDS – Drain-to-Source Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
On-Resistance vs. Drain Current
Capacitance
40
20
16
32
C – Capacitance (pF)
r DS(on) – On-Resistance ( )
VGS = 0 V
VGS = 4.5 V
12
VGS = 5 V
8
VGS = 10 V
4
Ciss
24
16
Coss
8
Crss
0
0
0
200
400
600
800
0
1000
5
ID – Drain Current (mA)
15
20
25
VDS – Drain-to-Source Voltage (V)
Gate Charge
On-Resistance vs. Junction Temperature
15
1.8
ID = 500 mA
r DS(on) – On-Resistance ( )
(Normalized)
V GS – Gate-to-Source Voltage (V)
10
12
VDS = 30 V
VDS = 48 V
9
6
3
0
0.0
0.3
0.6
0.9
1.2
Qg – Total Gate Charge (nC)
Document Number: 71433
S-03518—Rev. A, 23-Apr-01
1.5
1.8
1.5
VGS = 10 V @ 500 mA
1.2
VGS = 4.5 V @ 25 mA
0.9
0.6
0.3
0.0
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
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Si1025X
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-Source Voltage
10
1000
VGS = 0 V
r DS(on) – On-Resistance ( )
I S – Source Current (A)
8
100
TJ = 125_C
10
TJ = 25_C
TJ = –55_C
ID = 500 mA
6
4
ID = 200 mA
2
0
1
0.00
0.3
0.6
0.9
1.2
0
1.5
2
VSD – Source-to-Drain Voltage (V)
4
6
8
10
VGS – Gate-to-Source Voltage (V)
Threshold Voltage Variance Over Temperature
0.5
V GS(th) Variance (V)
0.4
ID = 250 A
0.3
0.2
0.1
–0.0
–0.1
–0.2
–0.3
–50
–25
0
25
50
75
100
125
150
TJ – Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 500_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
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4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71433
S-03518—Rev. A, 23-Apr-01