VISHAY TP0101TS

TP0101T/TS
Vishay Siliconix
P-Channel 20-V (D-S) MOSFET, Low-Threshold
PRODUCT SUMMARY
ID (A)
rDS(on) (W)
TP0101T
TP0101TS
0.65 @ VGS = –4.5 V
–0.6
–1.0
0.85 @ VGS = –2.5 V
–0.5
–0.9
VDS (V)
–20
FEATURES
BENEFITS
APPLICATIONS
D
D
D
D
D
D
D
D
D
D
D Drivers: Relays, Solenoids, Lamps, Hammers,
Displays, Memories
D Battery Operated Systems, DC/DC Converters
D Power Supply Converter Circuits
D Load/Power Switching–Cell Phones, Pagers
High-Side Switching
Low On-Resistance: 0.45 W
Low Threshold: 0.9 V (typ)
Fast Switching Speed: 32 ns
2.5-V or Lower Operation
Ease in Driving Switches
Low Offset (Error) Voltage
Low-Voltage Operation
High-Speed Circuits
Low Battery Voltage Operation
TO-236
(SOT-23)
Top View
G
Marking Code:
1
3
S
D
TP0101T: POwll
TP0101TS: PSwll
w = Week Code
l = Lot Traceability
2
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Symbol
TP0101T
TP0101TSc
Drain-Source Voltage
VDS
–20
–20
Gate-Source Voltage
VGS
"8
"8
Parameter
Continuous Drain Current (TJ = 150_C)
_ b
Pulsed Drain
TA= 25_C
TA= 70_C
Currenta
Continuous Source Current (Diode Conduction)b
TA= 25_C
Power Dissipationb
TA= 70_C
Operating Junction and Storage Temperature Range
Unit
V
–0.6
–1.0
–0.48
–0.8
IDM
–3
–3
IS
–0.6
–1.0
0.35
1.0
0.22
0.65
TJ, Tstg
–55 to 150
–55 to 150
_C
Symbol
TP0101T
TP0101TSc
Unit
RthJA
357
125
_C/W
ID
PD
A
W
THERMAL RESISTANCE RATINGS
Parameter
Thermal Resistance, Junction-to-Ambientb
Notes
a. Pulse width limited by maximum junction temperature.
b. Surface Mounted on FR4 Board, t v 10 sec.
c. Copper lead frame.
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
www.vishay.com
11-1
TP0101T/TS
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
V(BR)DSS
VGS = 0 V, ID = –10 mA
–20
–26
VGS(th)
VDS = VGS, ID = –50 mA
–0.5
–0.9
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "8 V
Zero Gate Voltage Drain Current
IDSS
On-State Drain Currenta
ID(on)
Max
Unit
Static
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
"100
VDS = –9.6 V, VGS = 0 V
Drain-Source On-Resistancea
Forward Transconductancea
Diode Forward
Voltagea
–1.5
nA
–1
–10
TJ = 55_C
VDS v –5 V, VGS = –4.5 V
–2.5
VDS v –5 V, VGS = –2.5 V
–0.5
m
mA
A
VGS = –4.5 V, ID = –0.6 A
0.45
0.65
VGS = –2.5 V, ID = –0.5 A
0.69
0.85
gfs
VDS = –5 V, ID = –0.6 A
1300
VSD
IS = –0.6 A, VGS = 0 V
–0.9
–1.2
2020
3000
rDS(on)
V
W
mS
V
Dynamic
Total Gate Charge
Qg
Gate-Source Charge
Qgs
VDS = –6 V, VGS =–4.5 V
ID ^ –0.6 A
180
Gate-Drain Charge
Qgd
720
Input Capacitance
Ciss
110
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
VDS = –6 V, VGS = 0, f = 1 MHz
pC
80
pF
30
Switching
td(on)
Turn-On Time
Turn-Off Time
tr
td(off)
tf
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
www.vishay.com
11-2
VDD = –6 V, RL = 12 W
ID ^ –0.6 A, VGEN = –4.5 V
RG = 6 W
7
12
25
35
19
30
9
15
ns
VPLJ01
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
TP0101T/TS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Output Characteristics
–6
Transfer Characteristics
–2.0
TA = –55_C
VGS = –5 V
–4.5 V
–1.5
–4 V
–4
ID – Drain Current (A)
ID – Drain Current (A)
–5
–3.5 V
–3
–3 V
–2
–2.5 V
25_C
125_C
–1.0
–0.5
–2 V
–1
–1.5 V
–0.5, 1 V
0
–1
0
–2
–3
0.0
0.0
–4
– 0.5
VDS – Drain-to-Source Voltage (V)
–1.0
On-Resistance vs. Drain Current
– 2.5
– 3.0
Capacitance
350
300
–3
C – Capacitance (pF)
rDS(on) – Drain-Source On-Resistance ( Ω )
– 2.0
VGS – Gate-to-Source Voltage (V)
–4
–2
VGS = –2.5 V
–1
VGS = 0
f = 1 MHz
250
200
150
Ciss
100
VGS = –4.5 V
Coss
50
Crss
0
0
–1
0
–2
–3
–4
–5
0
ID – Drain Current (A)
1.7
VDS = –6 V
ID = –0.5 A
–6
–9
– 12
On-Resistance vs. Junction Temperature
1.5
rDS(on) – On-Resistance ( Ω )
(Normalized)
–6
–3
VDS – Drain-to-Source Voltage (V)
Gate Charge
–7
VGS – Gate-to-Source Voltage (V)
–1.5
–5
–4
–3
–2
VGS = –4.5 V
ID = –0.5 A
1.3
1.1
0.9
–1
0
0
600
1200
1800
2400
Qg – Total Gate Charge (pC)
Document Number: 70229
S-04279—Rev. D, 16-Jul-01
3000
0.7
–50
0
50
100
150
TJ – Junction Temperature (_C)
www.vishay.com
11-3
TP0101T/TS
Vishay Siliconix
TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED)
Source-Drain Diode Forward Voltage
On-Resistance vs. Gate-to-Source Voltage
–10
3.0
rDS(on) – On-Resistance ( Ω )
IS – Source Current (A)
2.5
TJ = 50_C
–1
TJ = 25_C
– 0.1
2.0
1.5
1.0
ID = –0.5 A
0.5
–0.01
0.0
– 0.5
0.0
–1.0
– 1.5
– 2.0
– 2.5
0
VSD – Source-to-Drain Voltage (V)
–1
–2
–3
–4
–5
VGS – Gate-to-Source Voltage (V)
Threshold Voltage
Single Pulse Power
0.34
10
0.24
8
VGS(th) – Variance (V)
ID = –50 mA
0.14
6
0.04
4
TA = 25_C
Single Pulse
–0.06
2
–0.16
–50
0
0
50
100
150
0.001
0.01
0.1
1
10
100
Time (sec)
TJ – Junction Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
2
1
Normalized Effective Transient
Thermal Impedance
Duty Cycle = 0.5
0.2
0.1
0.1
0.05
0.02
Single Pulse
0.01
10–4
10–3
10–2
10–1
1
10
30
Square Wave Pulse Duration (sec)
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11-4
Document Number: 70229
S-04279—Rev. D, 16-Jul-01