TP0101T/TS Vishay Siliconix P-Channel 20-V (D-S) MOSFET, Low-Threshold PRODUCT SUMMARY ID (A) rDS(on) (W) TP0101T TP0101TS 0.65 @ VGS = –4.5 V –0.6 –1.0 0.85 @ VGS = –2.5 V –0.5 –0.9 VDS (V) –20 FEATURES BENEFITS APPLICATIONS D D D D D D D D D D D Drivers: Relays, Solenoids, Lamps, Hammers, Displays, Memories D Battery Operated Systems, DC/DC Converters D Power Supply Converter Circuits D Load/Power Switching–Cell Phones, Pagers High-Side Switching Low On-Resistance: 0.45 W Low Threshold: 0.9 V (typ) Fast Switching Speed: 32 ns 2.5-V or Lower Operation Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation TO-236 (SOT-23) Top View G Marking Code: 1 3 S D TP0101T: POwll TP0101TS: PSwll w = Week Code l = Lot Traceability 2 ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Symbol TP0101T TP0101TSc Drain-Source Voltage VDS –20 –20 Gate-Source Voltage VGS "8 "8 Parameter Continuous Drain Current (TJ = 150_C) _ b Pulsed Drain TA= 25_C TA= 70_C Currenta Continuous Source Current (Diode Conduction)b TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range Unit V –0.6 –1.0 –0.48 –0.8 IDM –3 –3 IS –0.6 –1.0 0.35 1.0 0.22 0.65 TJ, Tstg –55 to 150 –55 to 150 _C Symbol TP0101T TP0101TSc Unit RthJA 357 125 _C/W ID PD A W THERMAL RESISTANCE RATINGS Parameter Thermal Resistance, Junction-to-Ambientb Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70229 S-04279—Rev. D, 16-Jul-01 www.vishay.com 11-1 TP0101T/TS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ V(BR)DSS VGS = 0 V, ID = –10 mA –20 –26 VGS(th) VDS = VGS, ID = –50 mA –0.5 –0.9 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On-State Drain Currenta ID(on) Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage "100 VDS = –9.6 V, VGS = 0 V Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltagea –1.5 nA –1 –10 TJ = 55_C VDS v –5 V, VGS = –4.5 V –2.5 VDS v –5 V, VGS = –2.5 V –0.5 m mA A VGS = –4.5 V, ID = –0.6 A 0.45 0.65 VGS = –2.5 V, ID = –0.5 A 0.69 0.85 gfs VDS = –5 V, ID = –0.6 A 1300 VSD IS = –0.6 A, VGS = 0 V –0.9 –1.2 2020 3000 rDS(on) V W mS V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs VDS = –6 V, VGS =–4.5 V ID ^ –0.6 A 180 Gate-Drain Charge Qgd 720 Input Capacitance Ciss 110 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = –6 V, VGS = 0, f = 1 MHz pC 80 pF 30 Switching td(on) Turn-On Time Turn-Off Time tr td(off) tf Notes a. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 11-2 VDD = –6 V, RL = 12 W ID ^ –0.6 A, VGEN = –4.5 V RG = 6 W 7 12 25 35 19 30 9 15 ns VPLJ01 Document Number: 70229 S-04279—Rev. D, 16-Jul-01 TP0101T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics –6 Transfer Characteristics –2.0 TA = –55_C VGS = –5 V –4.5 V –1.5 –4 V –4 ID – Drain Current (A) ID – Drain Current (A) –5 –3.5 V –3 –3 V –2 –2.5 V 25_C 125_C –1.0 –0.5 –2 V –1 –1.5 V –0.5, 1 V 0 –1 0 –2 –3 0.0 0.0 –4 – 0.5 VDS – Drain-to-Source Voltage (V) –1.0 On-Resistance vs. Drain Current – 2.5 – 3.0 Capacitance 350 300 –3 C – Capacitance (pF) rDS(on) – Drain-Source On-Resistance ( Ω ) – 2.0 VGS – Gate-to-Source Voltage (V) –4 –2 VGS = –2.5 V –1 VGS = 0 f = 1 MHz 250 200 150 Ciss 100 VGS = –4.5 V Coss 50 Crss 0 0 –1 0 –2 –3 –4 –5 0 ID – Drain Current (A) 1.7 VDS = –6 V ID = –0.5 A –6 –9 – 12 On-Resistance vs. Junction Temperature 1.5 rDS(on) – On-Resistance ( Ω ) (Normalized) –6 –3 VDS – Drain-to-Source Voltage (V) Gate Charge –7 VGS – Gate-to-Source Voltage (V) –1.5 –5 –4 –3 –2 VGS = –4.5 V ID = –0.5 A 1.3 1.1 0.9 –1 0 0 600 1200 1800 2400 Qg – Total Gate Charge (pC) Document Number: 70229 S-04279—Rev. D, 16-Jul-01 3000 0.7 –50 0 50 100 150 TJ – Junction Temperature (_C) www.vishay.com 11-3 TP0101T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage –10 3.0 rDS(on) – On-Resistance ( Ω ) IS – Source Current (A) 2.5 TJ = 50_C –1 TJ = 25_C – 0.1 2.0 1.5 1.0 ID = –0.5 A 0.5 –0.01 0.0 – 0.5 0.0 –1.0 – 1.5 – 2.0 – 2.5 0 VSD – Source-to-Drain Voltage (V) –1 –2 –3 –4 –5 VGS – Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.34 10 0.24 8 VGS(th) – Variance (V) ID = –50 mA 0.14 6 0.04 4 TA = 25_C Single Pulse –0.06 2 –0.16 –50 0 0 50 100 150 0.001 0.01 0.1 1 10 100 Time (sec) TJ – Junction Temperature (_C) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10–4 10–3 10–2 10–1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 11-4 Document Number: 70229 S-04279—Rev. D, 16-Jul-01