Si2323DS New Product Vishay Siliconix P-Channel 20-V (D-S) MOSFET FEATURES PRODUCT SUMMARY VDS (V) -20 D TrenchFETr Power MOSFET rDS(on) (W) ID (A) 0.039 @ VGS = -4.5 V -4.7 0.052 @ VGS = -2.5 V - 4.1 0.068 @ VGS = -1.8 V - 3.5 APPLICATIONS D Load Switch D PA Switch TO-236 (SOT-23) G 1 3 S D 2 Top View Si2323DS (D3)* *Marking Code ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol 5 sec Steady State Drain-Source Voltage VDS -20 Gate-Source Voltage VGS 8 Continuous Drain Current (TJ = 150_C) _ a, b TA = 25_C TA = 70_C Pulsed Drain Current ID Continuous Source Current (Diode Conduction)a, b Maximum Power Dissipationa, b IS TA = 25_C TA = 70_C Operating Junction and Storage Temperature Range PD V -3.7 - 4.7 -3.8 IDM Unit -2.9 A -20 -1.0 -0.6 1.25 0.75 0.8 0.48 TJ, Tstg W _C -55 to 150 THERMAL RESISTANCE RATINGS Parameter Symbol t 5 sec Maximum Junction-to-Ambienta Maximum Junction-to-Foot (Drain) Steady State Steady State RthJA RthJF Typical Maximum 75 100 120 166 40 50 Unit _C/W C/W Notes a. Surface Mounted on 1” x 1” FR4 Board. b. Pulse width limited by maximum junction temperature. Document Number: 72024 S-22121—Rev. B, 25-Nov-02 www.vishay.com 1 Si2323DS New Product Vishay Siliconix SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ Max V(BR)DSS VGS = 0 V, ID = -250 mA -20 VGS(th) VDS = VGS, ID = -250 mA -0.40 Gate-Body Leakage IGSS VDS = 0 V, VGS = 8 V 100 VDS = -16 V, VGS = 0 V -1 Zero Gate Voltage Drain Current IDSS VDS = -16 V, VGS = 0 V, TJ = 55_C -10 On-State Drain Currenta ID(on) VDS -5 V, VGS = -4.5 V VGS = -4.5 V, ID = -4.7 A 0.031 0.039 rDS(on) VGS = -2.5 V, ID = -4.1 A 0.041 0.052 0.068 Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain-Source On-Resistancea Forward Transconductancea Diode Forward Voltage V -1.0 -20 nA m mA A VGS = -1.8 V, ID = -2.0 A 0.054 gfs VDS = -5 V, ID = -4.7 A 16 VSD IS = -1.0 A, VGS = 0 V 0.7 -1.2 12.5 19 W S V Dynamicb Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = -10 V, VGS = -4.5 V ID -4.7 A 1.7 nC 3.3 1020 VDS = -10 V, VGS = 0, f = 1 MHz 191 pF 140 Switchingc td(on) Turn-On Time Turn-Off Time tr td(off) VDD = -10 V, RL = 10 W ID -1.0 A, VGEN = -4.5 V RG = 6 W tf 25 40 43 65 71 110 48 75 ns Notes a. Pulse test: PW 300 ms duty cycle 2%. b. For DESIGN AID ONLY, not subject to production testing. c. Switching time is essentially independent of operating temperature. www.vishay.com 2 Document Number: 72024 S-22121—Rev. B, 25-Nov-02 Si2323DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics Transfer Characteristics 20 20 VGS = 5 thru 2.5 V TC = -55_C 16 2V I D - Drain Current (A) I D - Drain Current (A) 16 12 8 1.5 V 4 25_C 12 125_C 8 4 1V 0 0 1 2 3 4 0 0.0 5 0.5 VDS - Drain-to-Source Voltage (V) 1.0 2.0 2.5 VGS - Gate-to-Source Voltage (V) Capacitance On-Resistance vs. Drain Current 1800 0.15 1500 0.12 C - Capacitance (pF) r DS(on) - On-Resistance ( W ) 1.5 0.09 VGS = 1.8 V 0.06 VGS = 2.5 V 0.03 1200 Ciss 900 600 Coss 300 VGS = 4.5 V Crss 0.00 0 0 4 8 12 16 20 0 4 ID - Drain Current (A) 12 16 20 VDS - Drain-to-Source Voltage (V) Gate Charge On-Resistance vs. Junction Temperature 5 1.5 1.4 VDS = 6 V ID = 4.7 A 4 r DS(on) - On-Resistance ( W) (Normalized) V GS - Gate-to-Source Voltage (V) 8 3 2 1 1.3 VGS = 4.5 V ID = 4.7 A 1.2 1.1 1.0 0.9 0.8 0.7 0 0 3 6 9 Qg - Total Gate Charge (nC) Document Number: 72024 S-22121—Rev. B, 25-Nov-02 12 15 0.6 -50 -25 0 25 50 75 100 125 150 TJ - Junction Temperature (_C) www.vishay.com 3 Si2323DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 0.15 20 r DS(on) - On-Resistance ( W ) I S - Source Current (A) 10 TJ = 150_C TJ = 25_C 1 0.12 0.09 ID = 4.7 A ID = 2 A 0.06 0.03 0.00 0.1 0.0 0.2 0.4 0.6 1.0 0.8 0 1.2 1 VSD - Source-to-Drain Voltage (V) 2 4 5 VGS - Gate-to-Source Voltage (V) Threshold Voltage Single Pulse Power 0.4 12 ID = 140 mA 0.3 10 8 0.2 Power (W) V GS(th) Variance (V) 3 0.1 6 0.0 4 -0.1 2 TA = 25_C -0.2 -50 0 -25 0 25 50 75 100 125 150 0.01 0.1 TJ - Temperature (_C) 1 10 100 600 Time (sec) Safe Operating Area 100 IDM Limited rDS(on) Limited I D - Drain Current (A) 10 P(t) = 0.0001 P(t) = 0.001 1 0.1 ID(on) Limited P(t) = 0.01 P(t) = 0.1 P(t) = 1 TA = 25_C Single Pulse P(t) = 10 dc BVDSS Limited 0.01 0.1 1 10 100 VDS - Drain-to-Source Voltage (V) www.vishay.com 4 Document Number: 72024 S-22121—Rev. B, 25-Nov-02 Si2323DS New Product Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.1 0.2 Notes: 0.1 PDM 0.05 t1 t2 1. Duty Cycle, D = t1 t2 2. Per Unit Base = RthJA = 120_C/W 0.02 3. TJM - TA = PDMZthJA(t) 4. Surface Mounted Single Pulse 0.01 10- 4 10- 3 10- 2 10- 1 1 10 100 600 Square Wave Pulse Duration (sec) Document Number: 72024 S-22121—Rev. B, 25-Nov-02 www.vishay.com 5