VISHAY SI2316DS

Si2316DS
New Product
Vishay Siliconix
N-Channel 30-V (D-S) MOSFET
FEATURES
PRODUCT SUMMARY
VDS (V)
30
D TrenchFETr Power MOSFET
rDS(on) (W)
ID (A)
0.050 @ VGS = 10 V
3.4
0.085 @ VGS = 4.5 V
2.6
APPLICATIONS
D Battery Switch
TO-236
(SOT-23)
G
1
3
S
D
2
Top View
Si2316DS (C6)*
*Marking Code
ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)
Parameter
Symbol
5 sec
Steady State
Drain-Source Voltage
VDS
30
Gate-Source Voltage
VGS
"20
Continuous Drain Current (TJ = 150_C)
_ a, b
TA= 25_C
TA= 70_C
Pulsed Drain Currentb
Continuous Source Current (Diode Conduction)a, b
TA= 25_C
Power Dissipationa, b
TA= 70_C
Operating Junction and Storage Temperature Range
V
3.4
ID
2.9
2.7
2.3
IDM
16
IS
0.8
PD
A
0.96
0.7
0.6
0.45
TJ, Tstg
Unit
W
_C
–55 to 150
THERMAL RESISTANCE RATINGS
Parameter
Symbol
t v 5 sec
Maximum Junction-to-Ambienta
Maximum Junction-to-Foot (drain)
Steady State
Steady State
RthJA
RthJF
Typical
Maximum
100
130
140
175
60
75
Unit
_C/W
C/W
Notes
a. Surface Mounted on 1” x 1” FR4 Board.
b. Pulse width limited by maximum junction temperature
Document Number: 71798
S-05481—Rev. A, 21-Jan-02
www.vishay.com
1
Si2316DS
New Product
Vishay Siliconix
SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)
Limits
Parameter
Symbol
Test Conditions
Min
Typ
Max
Unit
Static
V(BR)DSS
VGS = 0 V, ID = 250 mA
30
VGS(th)
VDS = VGS, ID = 250 mA
0.8
Gate-Body Leakage
IGSS
VDS = 0 V, VGS = "20 V
"100
IDSS
VDS = 24 V, VGS = 0 V
0.5
Zero Gate Voltage Drain Current
VDS = 24 V, VGS = 0 V, TJ = 55_C
10
Drain-Source Breakdown Voltage
Gate-Threshold Voltage
On-State Drain Currenta
ID(on)
On-State Drain Currenta
Drain-Source On-Resistancea
Diode Forward Voltage
6
4
nA
m
mA
A
VGS = 10 V, ID = 3.4 A
0.042
0.050
VGS = 4.5 V, ID = 2.6 A
0.068
0.085
gfs
VDS = 4.5 V, ID = 3.4 A
6.0
VSD
IS = 0.8 A, VGS = 0 V
0.8
1.2
4.3
7
VDS = 15 V, VGS = 10 V, ID = 3.4 A
0.65
rDS(on)
Forward Transconductancea
VDS w 4.5 V, VGS = 10 V
VDS w 4.5 V, VGS = 4.5 V
V
W
S
V
Dynamicb
Total Gate Charge
Qg
Gate-Source Charge
Qgs
Gate-Drain Charge
Qgd
nC
1.2
Input Capacitance
Ciss
Output Capacitance
Coss
215
Reverse Transfer Capacitance
Crss
55
td(on)
9
15
tr
9
15
14
20
6
12
90
VDS = 15 V, VGS = 0 V, f = 1 MHz
pF
Switching
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
VDD = 15 V, RL = 15 W
ID ^ 1.0 A, VGEN = 10 V, RG = 6 W
td(off)
Fall-Time
tf
ns
Notes
a. Pulse test: PW v300 ms duty cycle v2%.
b. Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Output Characteristics
Transfer Characteristics
16
16
VGS = 10 thru 5 V
14
14
12
I D – Drain Current (A)
I D – Drain Current (A)
12
4V
10
8
6
3V
4
2
10
8
6
4
TC = 125_C
2
25_C
–55_C
2V
0
0
0
2
4
6
8
VDS – Drain-to-Source Voltage (V)
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2
10
0
1
2
3
4
5
VGS – Gate-to-Source Voltage (V)
Document Number: 71798
S-05481—Rev. A, 21-Jan-02
Si2316DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
On-Resistance vs. Drain Current
Capacitance
0.5
350
C – Capacitance (pF)
r DS(on) – On-Resistance ( W )
300
0.4
0.3
0.2
250
Ciss
200
150
Coss
100
VGS = 4.5 V
0.1
Crss
VGS = 10 V
50
0.0
0
0
2
4
6
8
10
12
14
16
0
5
10
ID – Drain Current (A)
Gate Charge
25
30
On-Resistance vs. Junction Temperature
2.0
VDS = 15 V
ID = 3.4 A
r DS(on) – On-Resistance (W)
(Normalized)
V GS – Gate-to-Source Voltage (V)
20
VDS – Drain-to-Source Voltage (V)
10
8
6
4
VGS = 10 V
ID = 3.4 A
1.5
1.0
0.5
2
0
0
1
2
3
4
0.0
–50
5
–25
0
Qg – Total Gate Charge (nC)
Source-Drain Diode Forward Voltage
50
75
100
125
150
On-Resistance vs. Gate-to-Source Voltage
0.5
r DS(on) – On-Resistance ( W )
10
TJ = 150_C
1
0.1
0.0
25
TJ – Junction Temperature (_C)
30
I S – Source Current (A)
15
TJ = 25_C
0.4
ID = 3.4 A
0.3
0.2
0.1
0.0
0.2
0.4
0.6
0.8
1.0
VSD – Source-to-Drain Voltage (V)
Document Number: 71798
S-05481—Rev. A, 21-Jan-02
1.2
1.4
0
2
4
6
8
10
VGS – Gate-to-Source Voltage (V)
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Si2316DS
New Product
Vishay Siliconix
TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)
Threshold Voltage
Single Pulse Power
0.4
10
8
ID = 250 mA
–0.0
Power (W)
V GS(th) Variance (V)
0.2
–0.2
6
TA = 25_C
4
–0.4
2
–0.6
–0.8
–50
0
–25
0
25
50
75
100
125
150
0.01
0.1
1
10
100
600
Time (sec)
TJ – Temperature (_C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Effective Transient
Thermal Impedance
2
1
Duty Cycle = 0.5
0.2
Notes:
0.1
PDM
0.1
0.05
t1
t2
1. Duty Cycle, D =
0.02
t1
t2
2. Per Unit Base = RthJA = 166_C/W
3. TJM – TA = PDMZthJA(t)
Single Pulse
4. Surface Mounted
0.01
10–4
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4
10–3
10–2
10–1
1
Square Wave Pulse Duration (sec)
10
100
600
Document Number: 71798
S-05481—Rev. A, 21-Jan-02