TN0200T/TS Vishay Siliconix N-Channel 20-V (D-S) MOSFETs PRODUCT SUMMARY ID (A) rDS(on) (W) TN0200T TN0200TS 0.4 @ VGS = 4.5 V 0.73 1.2 0.5 @ VGS = 2.5 V 0.65 1.1 VDS (V) 20 FEATURES D D D D D BENEFITS Low On-Resistance: 0.29 W Low Threshold: 0.9 V (typ) 2.5-V or Lower Operation Fast Switching Speed: 22 ns Low Input and Output Leakage D D D D D APPLICATIONS Low Offset Voltage Low-Voltage Operation High-Speed Circuits Low Error Voltage Low Battery Voltage Operation D D D D D Direct Logic-Level Interfact: TTL/CMOS Dirvers: Relays, Solenoids, Lamps, Hammers Battery Operated Systems, DC/DC Converters Solid-State Relays Load/Power Switching−Cell Phones, Pagers TO-236 (SOT-23) Top View G Marking Code: 1 3 S D 2 TN0200T: NOwll TN0200TS: NSwll w = Week Code ll = Lot Traceability ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Symbol TN0200T TN0200TSc Drain-Source Voltage VDS 20 20 Gate-Source Voltage VGS "8 "8 0.73 1.2 0.58 1.0 4 4 Continuous Drain Current (TJ = 150_C)b TA= 25_C TA= 70_C Pulsed Drain Currenta ID IDM Continuous Source Current (Diode Conduction)b IS TA= 25_C Power Dissipationb TA= 70_C Operating Junction and Storage Temperature Range PD 0.6 1.0 0.35 1.0 0.22 0.65 TJ, Tstg Unit V A W −55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambientb Symbol TN0200T TN0200TSc Unit RthJA 357 125 _C/W Notes a. Pulse width limited by maximum junction temperature. b. Surface Mounted on FR4 Board, t v 10 sec. c. Copper lead frame. Document Number: 70202 S-40277—Rev. F, 23-Feb-04 www.vishay.com 1 TN0200T/TS Vishay Siliconix SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED) Limits Parameter Symbol Test Conditions Min Typ V(BR)DSS VGS = 0 V, ID = 10 mA 20 36 VGS(th) VDS = VGS, ID = 50 mA 0.5 0.9 Gate-Body Leakage IGSS VDS = 0 V, VGS = "8 V Zero Gate Voltage Drain Current IDSS On State Drain Currenta On-State ID(on) D( ) Max Unit Static Drain-Source Breakdown Voltage Gate-Threshold Voltage Drain Source On Drain-Source On-Resistance Resistancea Forward Transconductancea Diode Forward Voltagea 1.5 "100 VDS = 16 V, VGS = 0 V 0.1 2 TJ = 85_C VDS w 5 V, VGS = 4.5 V 2.5 VDS w 5 V, VGS = 2.5 V 1.5 nA mA A VGS = 4.5 V, ID = 0.6 A 0.29 0.4 VGS = 2.5 V, ID = 0.6 A 0.34 0.5 gfs VDS = 5 V, ID = 0.6 A 2.2 VSD IS = 0.6 A, VGS = 0 V 0.8 1.2 1900 2800 rDS(on) DS( ) V W S V Dynamic Total Gate Charge Qg Gate-Source Charge Qgs VDS = 10 V, VGS = 4.5 V, ID = 0.6 A 50 Gate-Drain Charge Qgd 750 Input Capacitance Ciss 90 Output Capacitance Coss Reverse Transfer Capacitance Crss VDS = 10 V, VGS = 0 V, f = 1 MHz pC 45 pF 12 Switching Turn-On Delay Time Rise Time Turn-Off Delay Time Fall-Time Notes a. Pulse test: PW v300 ms duty cycle v2%. www.vishay.com 2 td(on) 8 13 tr 14 21 21 30 7 11 td(off) tf VDD = 10 V, RL = 16 W ID ^ 0.6 A, VGEN = 4.5 V, RG = 6 W ns VNLJ02 Document Number: 70202 S-40277—Rev. F, 23-Feb-04 TN0200T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Output Characteristics 6 3.5 V VGS = 5, 4.5, 4 V Transfer Characteristics 4 TC = −55_C 3V 5 ID − Drain Current (A) ID − Drain Current (A) 3 4 2.5 V 3 2V 2 0, 0.5, 1 V 1 1 2 1 2 3 0 0.0 4 VDS − Drain-to-Source Voltage (V) 1.0 1.5 2.0 2.5 3.0 Capacitance 250 0.8 200 C − Capacitance (pF) rDS(on) − Drain-Source On-Resistance ( Ω ) 0.5 VGS − Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 1.0 125_C 1.5 V 0 0 25_C 0.6 VGS = 4.5 V VGS = 2.5 V 0.4 0.2 150 Ciss 100 Coss 50 0.0 Crss 0 0 1 2 3 4 5 6 7 0 ID − Drain Current (A) Gate Charge 5 4 8 12 16 20 VDS − Drain-to-Source Voltage (V) 1.7 On-Resistance vs. Junction Temperature 4 1.5 rDS(on) − On-Resistance ( Ω ) (Normalized) VGS − Gate-to-Source Voltage (V) VDS = 10 V ID = 0.6 A 3 2 1 0 0 300 600 900 1200 1500 Qg − Total Gate Charge (pC) Document Number: 70202 S-40277—Rev. F, 23-Feb-04 1800 2100 VGS = 4.5 V ID = 0.6 A 1.3 1.1 0.9 0.7 −50 0 50 100 150 TJ − Junction Temperature (_C) www.vishay.com 3 TN0200T/TS Vishay Siliconix TYPICAL CHARACTERISTICS (TA = 25_C UNLESS OTHERWISE NOTED) Source-Drain Diode Forward Voltage IS − Source Current (A) TJ = 150_C TJ = 25_C 1 On-Resistance vs. Gate-to-Source Voltage 0.8 rDS(on) − On-Resistance ( Ω ) 10 0.1 0.01 0.6 0.4 0.2 ID = 0.6 A 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0 2.0 VSD − Source-to-Drain Voltage (V) 4 5 8 −0.0 Power (W) ID = 50 mA −0.1 6 4 TC = 25_C Single Pulse −0.2 2 −0.3 0 −0.4 −50 0 50 100 150 0.001 0.01 1.0 10.0 Normalized Thermal Transient Impedance, Junction-to-Ambient 2 1 0.1 Time (sec) TJ − Junction Temperature (_C) Normalized Effective Transient Thermal Impedance 3 Single Pulse Power 10 0.1 VGS(th) − Variance (V) 2 VGS − Gate-to-Source Voltage (V) Threshold Voltage 0.2 1 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10−4 10−3 10−2 10−1 1 10 30 Square Wave Pulse Duration (sec) www.vishay.com 4 Document Number: 70202 S-40277—Rev. F, 23-Feb-04