PHILIPS PBSS4320T

DISCRETE SEMICONDUCTORS
DATA SHEET
PBSS4320T
20 V NPN low VCEsat transistor
Product specification
Supersedes data of 2002 Aug 08
2004 Mar 18
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
QUICK REFERENCE DATA
FEATURES
• Low collector-emitter saturation voltage VCEsat and
corresponding low RCEsat
SYMBOL
• High collector current capability
• High collector current gain
• Improved efficiency due to reduced heat generation.
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
20
V
IC
collector current (DC)
2
A
ICRP
repetitive peak collector
current
3
A
RCEsat
equivalent on-resistance
105
mΩ
APPLICATIONS
• Power management applications
PINNING
• Low and medium power DC/DC convertors
PIN
• Supply line switching
• Battery chargers
• Linear voltage regulation with low voltage drop-out
(LDO).
DESCRIPTION
1
base
2
emitter
3
collector
DESCRIPTION
handbook, halfpage
NPN low VCEsat transistor in a SOT23 plastic package.
PNP complement: PBSS5320T.
3
3
1
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS4320T
1
ZG*
Top view
Note
1. * = p: Made in Hong Kong.
* = t: Made in Malaysia.
* = W: Made in China.
2
2
MAM255
Fig.1 Simplified outline (SOT23) and symbol.
ORDERING INFORMATION
TYPE
NUMBER
PBSS4320T
2004 Mar 18
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
20
V
VEBO
emitter-base voltage
open collector
−
5
V
IC
collector current (DC)
−
2
A
ICRP
repetitive peak collector current
note 1
−
3
A
ICM
peak collector current
single peak
−
5
A
IB
base current (DC)
Ptot
total power dissipation
−
0.5
A
Tamb ≤ 25 °C; note 2
−
300
mW
Tamb ≤ 25 °C; note 3
−
480
mW
Tamb ≤ 25 °C; note 4
−
540
mW
Tamb ≤ 25 °C; notes 1 and 2
−
1.2
W
+150
°C
Tstg
storage temperature
−65
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
4. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
thermal resistance from junction to
ambient
CONDITIONS
VALUE
UNIT
in free air; note 1
417
K/W
in free air; note 2
260
K/W
in free air; note 3
230
K/W
in free air; notes 1 and 4
104
K/W
Notes
1. Device mounted on a printed-circuit board; single sided copper; tinplated; standard footprint.
2. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 1 cm2.
3. Device mounted on a printed-circuit board; single sided copper; tinplated; mounting pad for collector 6 cm2.
4. Operated under pulsed conditions: pulse width tp ≤ 100 ms; duty cycle δ ≤ 0.25.
2004 Mar 18
3
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
ICBO
PARAMETER
emitter-base cut-off current
hFE
DC current gain
collector-emitter saturation
voltage
MIN.
TYP.
MAX.
UNIT
−
−
100
nA
IE = 0 A; VCB = 20 V; Tj = 150 °C
−
−
50
µA
IC = 0 A; VEB = 5 V
−
−
100
nA
collector-base cut-off current IE = 0 A; VCB = 20 V
IEBO
VCEsat
CONDITIONS
IC = 100 mA; VCE = 2 V
220
−
−
IC = 500 mA; VCE = 2 V
220
−
−
IC = 1 A; VCE = 2 V; note 1
220
−
−
IC = 2 A; VCE = 2 V; note 1
200
−
−
IC = 3 A; VCE = 2 V; note 1
150
−
−
IC = 500 mA; IB = 50 mA
−
−
70
mV
IC = 1 A; IB = 50 mA
−
−
120
mV
IC = 2 A; IB = 40 mA; note 1
−
−
230
mV
IC = 2 A; IB = 200 mA; note 1
−
−
210
mV
IC = 3 A; IB = 300 mA; note 1
−
−
310
mV
RCEsat
equivalent on-resistance
IC = 2 A; IB = 200 mA; note 1
−
80
105
mΩ
VBEsat
base-emitter saturation
voltage
IC = 2 A; IB = 40 mA; note 1
−
−
1.1
V
IC = 3 A; IB = 300 mA; note 1
−
−
1.2
V
VBEon
base-emitter turn-on voltage
IC = 1 A; VCE = 2 V; note 1
1.2
−
−
V
fT
transition frequency
IC = 100 mA; VCE = 5 V;
f = 100 MHz
100
−
−
MHz
Cc
collector capacitance
IE = Ie = 0 A; VCB = 10 V; f = 1 MHz
−
−
35
pF
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
2004 Mar 18
4
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
MLD849
800
MLD850
1200
handbook, halfpage
handbook, halfpage
hFE
VBE
(mV)
600
(1)
800
(1)
(2)
400
(2)
(3)
400
(3)
200
0
10−1
1
10
102
0
10−1
103
104
IC (mA)
1
VCE = 2 V.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = 2 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.2
Fig.3
DC current gain as a function of collector
current; typical values.
MLD851
1400
10
102
Base-emitter voltage as a function of
collector current; typical values.
MLD852
1400
handbook, halfpage
103
104
IC (mA)
handbook, halfpage
VBEsat
VBEsat
(mV)
(mV)
1000
1000
(1)
(1)
(2)
(2)
(3)
600
200
10−1
1
10
102
600
(3)
200
10−1
103
104
IC (mA)
1
IC/IB = 10.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 150 °C.
Fig.4
Fig.5
Base-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 18
5
10
102
103
104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
MLD853
103
handbook, halfpage
MLD854
103
handbook, halfpage
VCEsat
VCEsat
(mV)
(mV)
(1)
(2)
102
102
(3)
(1)
10
(2)
10
(3)
1
10−1
1
10
102
1
10−1
103
104
IC (mA)
1
IC/IB = 10.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD855
103
handbook, halfpage
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLD856
103
handbook, halfpage
VCEsat
VCEsat
(mV)
(mV)
102
102
(1)
(3)
(2)
(1)
(2)
10
10
(3)
1
10−1
1
10
102
1
10−1
103
104
IC (mA)
1
IC/IB = 50.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 100.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 Mar 18
6
10
102
103
104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
MLD857
102
handbook, halfpage
RCEsat
(Ω)
10
1
(1)
(2)
10−1
10−2
10−1
(3)
1
10
102
103
104
IC (mΑ)
IC/IB = 20.
(1) Tamb = 150 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.10 Equivalent on-resistance as a function of
collector current; typical values.
2004 Mar 18
7
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 Mar 18
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
8
Philips Semiconductors
Product specification
20 V NPN low VCEsat transistor
PBSS4320T
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no licence or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 Mar 18
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004
Mar 18
Document order number:
9397 750 12436