DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 PBSS5540X 40 V, 5 A PNP low VCEsat (BISS) transistor Product specification Supersedes data of 2004 Jan 15 2004 Nov 04 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X QUICK REFERENCE DATA FEATURES • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability: IC and ICM • High efficiency leading to less heat generation. UNIT VCEO collector-emitter voltage −40 collector current (DC) −4 A ICRP repetitive peak collector current −5 A RCEsat equivalent on-resistance 75 mΩ • Battery management applications • DC/DC converter applications MAX. IC APPLICATIONS • Supply line switching circuits PARAMETER V PINNING • Strobe flash units PIN • Medium power driver (e.g. relays, buzzers and motors). DESCRIPTION PNP low VCEsat transistor in a medium power SOT89 (SC-62) package. DESCRIPTION 1 emitter 2 collector 3 base NPN complement: PBSS4540X. MARKING 2 MARKING CODE(1) TYPE NUMBER PBSS5540X 3 *1G Note 1 sym079 1. * = p: Made in Hong Kong. * = t: Made in Malaysia. * = W: Made in China. 3 2 1 Fig.1 Simplified outline (SOT89) and symbol. ORDERING INFORMATION PACKAGE TYPE NUMBER NAME PBSS5540X 2004 Nov 04 SC-62 DESCRIPTION plastic surface mounted package; collector pad for good heat transfer; 3 leads 2 VERSION SOT89 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − −40 V VCEO collector-emitter voltage open base − −40 V VEBO emitter-base voltage open collector − −6 V ICM peak collector current tp ≤ 1 ms − −10 A ICRP repetitive peak collector current tp ≤ 10 ms; δ ≤ 0.2 − −5 A IC collector current (DC) − −4 A IBM peak base current IB base current (DC) Ptot total power dissipation tp ≤ 1 ms − −2 A − −1 A tp ≤ 10 ms; δ ≤ 0.2; note 1 − Tamb ≤ 25 °C 2.5 W note 1 − 0.55 W note 2 − 1 W note 3 − 1.4 W note 4 − 1.6 W +150 °C Tstg storage temperature −65 Tj junction temperature − 150 °C Tamb ambient temperature −65 +150 °C Notes 1. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 4. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. 2004 Nov 04 3 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor 001aaa229 1600 Ptot (mW) PBSS5540X (1) 1200 (2) 800 (3) 400 0 −50 0 50 100 150 200 Tamb (°C) (1) FR4 PCB; 6 cm2 mounting pad for collector. (2) FR4 PCB; 1 cm2 mounting pad for collector. (3) FR4 PCB; standard footprint. Fig.2 Power derating curves. 2004 Nov 04 4 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X THERMAL CHARACTERISTICS SYMBOL Rth(j-a) PARAMETER CONDITIONS thermal resistance from junction to ambient Rth(j-s) VALUE UNIT notes 1 and 2 50 K/W note 2 225 K/W note 3 125 K/W note 4 90 K/W note 5 80 K/W 16 K/W in free air thermal resistance from junction to soldering point Notes 1. Pulse test: tp ≤ 10 ms; δ ≤ 0.2. 2. Device mounted on a printed-circuit board, single-sided copper, tin-plated and standard footprint. 3. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 1 cm2. 4. Device mounted on a printed-circuit board, single-sided copper, tin-plated and mounting pad for collector 6 cm2. 5. Device mounted on a 7 cm2 ceramic printed-circuit board, 1 cm2 single-sided copper and tin-plated. 006aaa232 103 Zth (K/W) 102 (1) (2) (3) (4) (5) (6) 10 (7) (8) (9) 1 10−1 10−5 (10) 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; standard footprint. (1) δ = 1. (3) δ = 0.5. (5) δ = 0.2. (7) δ = 0.05. (9) δ = 0.01. (2) δ = 0.75. (4) δ = 0.33. (6) δ = 0.1. (8) δ = 0.02. (10) δ = 0. Fig.3 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 5 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X 006aaa233 103 Zth (K/W) (1) 102 (2) (3) (5) (4) (6) 10 (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 1 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.4 Transient thermal impedance as a function of pulse time; typical values. 006aaa234 103 Zth (K/W) 102 (1) (2) (3) (4) 10 (5) (6) (7) (8) (9) 1 (10) 10−1 10−5 10−4 10−3 10−2 10−1 1 10 102 103 tp (s) Mounted on FR4 printed-circuit board; mounting pad for collector 6 cm2. (1) δ = 1. (2) δ = 0.75. (3) δ = 0.5. (4) δ = 0.33. (5) δ = 0.2. (6) δ = 0.1. (7) δ = 0.05. (8) δ = 0.02. (9) δ = 0.01. (10) δ = 0. Fig.5 Transient thermal impedance as a function of pulse time; typical values. 2004 Nov 04 6 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current IEBO emitter-base cut-off current hFE DC current gain VCEsat collector-emitter saturation voltage CONDITIONS MIN. TYP. MAX. UNIT VCB = −30 V; IE = 0 A − − −100 nA VCB = −30 V; IE = 0 A; Tj = 150 °C − − −50 µA VEB = −5 V; IC = 0 A − − −100 nA VCE = −2 V; IC = −0.5 A 250 − − VCE = −2 V; IC = −1 A; note 1 200 − − VCE = −2 V; IC = −2 A; note 1 150 − − VCE = −2 V; IC = −5 A; note 1 50 − − IC = −0.5 A; IB = −5 mA − − 120 mV IC = −1 A; IB = −10 mA − − 170 mV IC = −2 A; IB = −200 mA − − 160 mV IC = −4 A; IB = −200 mA; note 1 − − 340 mV IC = −5 A; IB = −500 mA; note 1 − − 375 mV RCEsat equivalent on-resistance IC = −5 A; IB = −500 mA; note 1 − 45 75 mΩ VBEsat base-emitter saturation voltage IC = −4 A; IB = −200 mA; note 1 − − −1.1 V IC = −5 A; IB = −500 mA; note 1 − − −1.2 V VBEon base-emitter turn-on voltage VCE = −2 V; IC = −2 A − − −1.0 V fT transition frequency VCE = −10 V; IC = −0.1 A; f = 100 MHz 60 − − MHz Cc collector capacitance VCB = −10 V; IE = ie = 0 A; f = 1 MHz − − 105 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2004 Nov 04 7 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X 001aaa157 −8 IC (A) (1) VBE (V) (2) −6 001aaa158 −1.2 (3) (1) −0.8 (2) (4) −4 (3) (5) −0.4 −2 0 −0.5 0 −1 −1.5 0 −10−1 −2 −1 −10 −102 −103 −104 IC (mA) VCE (V) (1) IB1 = −11 mA. (2) IB2 = −22 mA. (3) IB3 = −33 mA. Fig.6 (4) IB4 = −44 mA. (5) IB5 = −55 mA. VCE = −2 V. (1) Tamb = −55 °C. Collector current as a function of collector-emitter voltage; typical values. 001aaa159 1000 hFE (2) Tamb = 25 °C. (3) Tamb = 100 °C. Fig.7 Base-emitter voltage as a function of collector current; typical values. 102 001aaa160 RCEsat (Ω) 800 10 600 (1) 1 (2) 400 (2) (1) 10−1 (3) 200 (3) 0 −10−1 −1 −10 −102 10−2 −10−1 −103 −104 IC (mA) VCE = −2 V. (1) Tamb = 100 °C. Fig.8 −10 −102 −103 −104 IC (mA) IC/IB = 20. (2) Tamb = 25 °C. (1) Tamb = 100 °C. (3) Tamb = −55 °C. DC current gain as a function of collector current; typical values. 2004 Nov 04 −1 Fig.9 8 (2) Tamb = 25 °C. (3) Tamb = −55 °C. Equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X 001aaa161 −1 001aaa162 −1 VCEsat (V) VCEsat (V) −10−1 −10−1 (1) (1) (2) (2) −10−2 −10−3 −10−1 −1 −10 (3) −102 (3) −10−2 −10−3 −10−1 −103 −104 IC (mA) −1 −10 −102 −103 −104 IC (mA) Tamb = 25 °C. IC/IB = 20. (1) Tamb = 100 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) IC/IB = 100. Fig.10 Collector-emitter saturation voltage as a function of collector current; typical values. (3) IC/IB = 10. Fig.11 Collector-emitter saturation voltage as a function of collector current; typical values. 001aaa163 −10 (2) IC/IB = 50. 001aaa164 −1.2 VBE (V) VBEsat (V) −0.8 −1 (1) (2) −0.4 (3) −10−1 10−1 −1 −10 −102 0 −10−1 −103 −104 IC (mA) (2) Tamb = 25 °C. −102 −103 −104 IC (mA) (3) Tamb = 100 °C. Fig.12 Base-emitter saturation voltage as a function of collector current; typical values. 2004 Nov 04 −10 Tamb = 25 °C. IC/IB = 20. (1) Tamb = −55 °C. −1 Fig.13 Base-emitter voltage as a function of collector current; typical values. 9 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X Reference mounting conditions 32 mm handbook, halfpage 32 mm 10 mm 40 mm 2.5 mm 40 mm 1 mm 10 mm 3 mm 2.5 mm 2.5 mm 1 mm 1 mm 0.5 mm 0.5 mm 5 mm 5 mm 3.96 mm 3.96 mm 1.6 mm 1.6 mm MLE322 001aaa234 Fig.15 FR4, mounting pad for collector 1 cm2. Fig.14 FR4, standard footprint. 32 mm 30 mm 20 mm 40 mm 2.5 mm 1 mm 0.5 mm 5 mm 3.96 mm 1.6 mm 001aaa235 Fig.16 FR4, mounting pad for collector 6 cm2. 2004 Nov 04 10 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X PACKAGE OUTLINE Plastic surface mounted package; collector pad for good heat transfer; 3 leads SOT89 B D A bp3 E HE Lp 1 2 3 c bp2 w M bp1 e1 e 0 2 4 mm scale DIMENSIONS (mm are the original dimensions) UNIT A bp1 bp2 bp3 c D E e e1 HE Lp w mm 1.6 1.4 0.48 0.35 0.53 0.40 1.8 1.4 0.44 0.23 4.6 4.4 2.6 2.4 3.0 1.5 4.25 3.75 1.2 0.8 0.13 OUTLINE VERSION SOT89 2004 Nov 04 REFERENCES IEC JEDEC JEITA TO-243 SC-62 11 EUROPEAN PROJECTION ISSUE DATE 99-09-13 04-08-03 Philips Semiconductors Product specification 40 V, 5 A PNP low VCEsat (BISS) transistor PBSS5540X DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2004 Nov 04 12 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA76 © Koninklijke Philips Electronics N.V. 2004 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands R75/03/pp13 Date of release: 2004 Nov 04 Document order number: 9397 750 13893