DISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW PBSS2540M 40 V, 0.5 A NPN low VCEsat (BISS) transistor Product specification 2003 Jul 22 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M FEATURES QUICK REFERENCE DATA • Low collector-emitter saturation voltage VCEsat SYMBOL • High collector current capability IC and ICM VCEO collector-emitter voltage 40 V IC collector current (DC) 500 mA ICM peak collector current 1 A RCEsat equivalent on-resistance <500 mΩ • High efficiency leading to reduced heat generation • Reduced printed-circuit board requirements. PARAMETER MAX. UNIT APPLICATIONS PINNING • Power management: – DC-DC converter PIN DESCRIPTION – Supply line switching 1 base – Battery charger 2 emitter – LCD backlighting. 3 collector • Peripheral driver: – Driver in low supply voltage applications (e.g. lamps and LEDs). – Inductive load drivers (e.g. relays, buzzers and motors). 3 handbook, halfpage 2 DESCRIPTION 1 3 Low VCEsat NPN transistor in a SOT883 leadless ultra small plastic package. PNP complement: PBSS3540M. 1 2 Bottom view MAM475 MARKING TYPE NUMBER PBSS2540M 2003 Jul 22 MARKING CODE Fig.1 Simplified outline (SOT883) and symbol. DC 2 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT VCBO collector-base voltage open emitter − 40 V VCEO collector-emitter voltage open base − 40 V VEBO emitter-base voltage open collector − 6 V IC collector current (DC) notes 1 and 2 − 500 mA ICM peak collector current − 1 A IBM peak base current − 100 mA Ptot total power dissipation Tamb ≤ 25 °C; notes 1 and 2 − 250 mW Tamb ≤ 25 °C; note 1 and 3 − 430 mW Tstg storage temperature −65 +150 °C Tj junction temperature − 150 °C Tamb operating ambient temperature −65 +150 °C Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. THERMAL CHARACTERISTICS SYMBOL Rth j-a PARAMETER thermal resistance from junction to ambient CONDITIONS VALUE UNIT in free air; notes 1 and 2 500 K/W in free air; notes 1, 3 and 4 290 K/W Notes 1. Refer to SOT883 standard mounting conditions. 2. Device mounted on an FR4 printed-circuit board, single-sided copper, tinplated, standard footprint, with 60 µm copper strip line. 3. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm2. 4. Operated under pulsed conditions: duty cycle δ ≤ 20%, pulse width tp ≤ 30 ms. Soldering Reflow soldering is the only recommended soldering method. 2003 Jul 22 3 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M CHARACTERISTICS Tamb = 25 °C unless otherwise specified. SYMBOL ICBO PARAMETER collector-base cut-off current CONDITIONS MIN. TYP. MAX. VCB = 30 V; IE = 0 − − 100 nA VCB = 30 V; IE = 0; Tj = 150 °C − − 50 µA nA IEBO emitter-base cut-off current VEB = 5 V; IC = 0 − − 100 hFE DC current gain VCE = 2 V; IC = 10 mA 200 − − VCE = 2 V; IC = 100 mA; note 1 150 − − VCE = 2 V; IC = 500 mA; note 1 50 − − VCEsat UNIT collector-emitter saturation voltage IC = 10 mA; IB = 0.5 mA − − 50 mV IC = 100 mA; IB = 5 mA − − 100 mV IC = 200 mA; IB = 10 mA; note 1 − − 200 mV IC = 500 mA; IB = 50 mA; note 1 − − 250 mV RCEsat equivalent on-resistance IC = 500 mA; IB = 50 mA; note 1 − 380 <500 mΩ VBEsat base-emitter saturation voltage IC = 500 mA; IB = 50 mA; note 1 − − 1.2 V VBEon base-emitter turn-on voltage VCE = 2 V; IC = 100 mA; note 1 − − 1.1 V fT transition frequency IC = 100 mA; VCE = 5 V; f = 100 MHz 250 450 − MHz Cc collector capacitance VCB = 10 V; IE = Ie = 0; f = 1 MHz − − 6 pF Note 1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02. 2003 Jul 22 4 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M MHC082 1200 MHC085 1200 VBE (mV) handbook, halfpage handbook, halfpage hFE 1000 1000 (1) 800 (1) 800 600 (2) (2) 600 400 (3) 400 200 0 10−1 1 10 102 IC (mA) (3) 200 10−1 103 VCE = 2 V. VCE = 2 V. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = −55 °C. (2) Tamb = 25 °C. (3) Tamb = 150 °C. Fig.2 Fig.3 DC current gain as a function of collector current; typical values. MHC086 103 handbook, halfpage 1 10 102 IC (mA) 103 Base-emitter voltage as a function of collector current; typical values. MHC084 1200 handbook, halfpage VBEsat (mV) VCEsat (mV) 1000 (1) 800 102 (2) (1) 600 (2) (3) 10 10−1 1 10 102 (3) 400 IC (mA) 200 10−1 103 IC/IB = 20. IC/IB = 20. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. Fig.4 Fig.5 Collector-emitter saturation voltage as a function of collector current; typical values. 2003 Jul 22 5 1 10 102 IC (mA) 103 Base-emitter saturation voltage as a function of collector current; typical values. Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M MHC083 1200 IC (mA) 1000 RCEsat (Ω) (1) (2) (3) (5) 800 MHC087 103 handbook, halfpage handbook, halfpage 102 (4) (6) (7) (8) 10 (9) 600 (10) (1) (2) (3) 400 1 200 10−1 10−1 0 0 1 2 3 4 5 VCE (V) Tamb = 25 °C. (1) (2) (3) (4) IB = 25 mA. IB = 22.5 mA. IB = 20 mA. IB = 17.5 mA. IB = 15 mA. IB = 12.5 mA. IB = 10 mA. IB = 7.5 mA. 102 IC (mA) 103 (1) Tamb = 150 °C. (2) Tamb = 25 °C. (3) Tamb = −55 °C. (9) IB = 5 mA. (10) IB = 2.5 mA. Collector current as a function of collector-emitter voltage; typical values. 2003 Jul 22 10 IC/IB = 20. (5) (6) (7) (8) Fig.7 Fig.6 1 6 Collector-emitter equivalent on-resistance as a function of collector current; typical values. Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M PACKAGE OUTLINE Leadless ultra small plastic package; 3 solder lands; body 1.0 x 0.6 x 0.5 mm L SOT883 L1 2 b 3 e b1 1 e1 A A1 E D 0 0.5 1 mm scale DIMENSIONS (mm are the original dimensions) UNIT A (1) A1 max. b b1 D E e e1 L L1 mm 0.50 0.46 0.03 0.20 0.12 0.55 0.47 0.62 0.55 1.02 0.95 0.35 0.65 0.30 0.22 0.30 0.22 Note 1. Including plating thickness OUTLINE VERSION SOT883 2003 Jul 22 REFERENCES IEC JEDEC JEITA SC-101 7 EUROPEAN PROJECTION ISSUE DATE 03-02-05 03-04-03 Philips Semiconductors Product specification 40 V, 0.5 A NPN low VCEsat (BISS) transistor PBSS2540M DATA SHEET STATUS LEVEL DATA SHEET STATUS(1) PRODUCT STATUS(2)(3) Development DEFINITION I Objective data II Preliminary data Qualification This data sheet contains data from the preliminary specification. Supplementary data will be published at a later date. Philips Semiconductors reserves the right to change the specification without notice, in order to improve the design and supply the best possible product. III Product data This data sheet contains data from the product specification. Philips Semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. Relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Production This data sheet contains data from the objective specification for product development. Philips Semiconductors reserves the right to change the specification in any manner without notice. Notes 1. Please consult the most recently issued data sheet before initiating or completing a design. 2. The product status of the device(s) described in this data sheet may have changed since this data sheet was published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com. 3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. DEFINITIONS DISCLAIMERS Short-form specification The data in a short-form specification is extracted from a full data sheet with the same type number and title. For detailed information see the relevant data sheet or data handbook. Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips Semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips Semiconductors for any damages resulting from such application. Limiting values definition Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 60134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Right to make changes Philips Semiconductors reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design and/or performance. When the product is in full production (status ‘Production’), relevant changes will be communicated via a Customer Product/Process Change Notification (CPCN). Philips Semiconductors assumes no responsibility or liability for the use of any of these products, conveys no licence or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise specified. Application information Applications that are described herein for any of these products are for illustrative purposes only. Philips Semiconductors make no representation or warranty that such applications will be suitable for the specified use without further testing or modification. 2003 Jul 22 8 Philips Semiconductors – a worldwide company Contact information For additional information please visit http://www.semiconductors.philips.com. Fax: +31 40 27 24825 For sales offices addresses send e-mail to: [email protected]. SCA75 © Koninklijke Philips Electronics N.V. 2003 All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. Printed in The Netherlands 613514/01/pp9 Date of release: 2003 Jul 22 Document order number: 9397 750 11559