PHILIPS PBSS5160T

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D088
PBSS5160T
60 V, 1 A
PNP low VCEsat (BISS) transistor
Product specification
Supersedes data of 2003 Jun 23
2004 May 27
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
FEATURES
QUICK REFERENCE DATA
• Low collector-emitter saturation voltage VCEsat
SYMBOL
• High collector current capability: IC and ICM
PARAMETER
MAX.
UNIT
VCEO
collector-emitter voltage
−60
V
• High efficiency, reduces heat generation
IC
collector current (DC)
−1
A
• Reduces printed-circuit board area required
ICM
peak collector current
−2
A
• Cost effective replacement for medium power
transistors BCP52 and BCX52.
RCEsat
equivalent on-resistance
330
mΩ
PINNING
APPLICATIONS
PIN
• Major application segments:
– Automotive
– Telecom infrastructure
– Industrial.
DESCRIPTION
1
base
2
emitter
3
collector
• Power management:
– DC-to-DC conversion
handbook, halfpage
3
– Supply line switching.
3
• Peripheral driver:
– Driver in low supply voltage applications (e.g. lamps
and LEDs)
1
2
– Inductive load driver (e.g. relays,
buzzers and motors).
1
Top view
2
MAM256
DESCRIPTION
Fig.1 Simplified outline (SOT23) and symbol.
PNP low VCEsat transistor in a SOT23 plastic package.
NPN complement: PBSS4160T.
MARKING
MARKING CODE(1)
TYPE NUMBER
PBSS5160T
U6*
Note
1. * = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China.
ORDERING INFORMATION
TYPE NUMBER
PBSS5160T
2004 May 27
PACKAGE
NAME
−
DESCRIPTION
plastic surface mounted package; 3 leads
2
VERSION
SOT23
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−80
V
VCEO
collector-emitter voltage
open base
−
−60
V
VEBO
emitter-base voltage
open collector
−
−5
V
IC
collector current (DC)
note 1
−
−0.9
A
note 2
−
−1
A
t = 1 ms or limited by Tj(max)
−
−2
A
−
−300
mA
−
−1
A
note 1
−
270
mW
note 2
−
400
mW
notes 1 and 3
−
1.25
W
ICM
peak collector current
IB
base current (DC)
IBM
peak base current
tp ≤ 300 µs; δ ≤ 0.02
Ptot
total power dissipation
Tamb ≤ 25 °C;
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
150
°C
Tamb
operating ambient temperature
−65
+150
°C
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
3. Operated under pulsed conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
MLE128
500
handbook, halfpage
Ptot
(mW)
400
(1)
300
(2)
200
100
0
0
40
80
120
160
Tamb (°C)
(1) Device mounted with 1 cm2 collector tab.
(2) Device mounted on standard footprint.
Fig.2 Power derating curves.
2004 May 27
3
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
THERMAL CHARACTERISTICS
SYMBOL
Rth(j-a)
PARAMETER
CONDITIONS
thermal resistance from junction to
ambient
VALUE
UNIT
in free air; note 1
465
K/W
in free air; note 2
312
K/W
in free air; notes 1 and 3
100
K/W
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated and 1 cm2 collector mounting pad.
3. Operated under pulsed conditions: duty cycle δ ≤ 20 %, pulse width tp ≤ 10 ms.
MLE127
103
handbook, full pagewidth
δ=1
Zth
(K/W)
0.75
0.5
102
0.33
0.2
0.1
0.05
10
0.02
0.01
0
1
10−5
10−4
10−3
10−2
10−1
1
10
102
Mounted on printed-circuit board; standard footprint.
Fig.3 Transient thermal impedance as a function of pulse time; typical values.
2004 May 27
4
tp (s)
103
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
CHARACTERISTICS
Tamb = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
collector-base cut-off current
ICBO
MIN.
TYP.
MAX. UNIT
VCB = −60 V; IE = 0 A
−
−
−100
nA
VCB = −60 V; IE = 0 A; Tj = 150 °C
−
−
−50
µA
VCE = −60 V; VBE = 0 V
−
−
−100
nA
nA
ICES
collector-emitter cut-off current
IEBO
emitter-base cut-off current
VEB = −5 V; IC = 0 A
−
−
−100
hFE
DC current gain
VCE = −5 V; IC = −1 mA
200
350
−
VCE = −5 V; IC = −500 mA; note 1
150
250
−
VCEsat
collector-emitter saturation voltage
VCE = −5 V; IC = −1 A; note 1
100
160
−
IC = −100 mA; IB = −1 mA
−
−110
−160
mV
IC = −500 mA; IB = −50 mA
−
−120
−175
mV
−330
mV
IC = −1 A; IB = −100 mA; note 1
−
−220
VBEsat
base-emitter saturation voltage
IC = −1 A; IB = −50 mA
−
−0.95 −1.1
V
RCEsat
equivalent on-resistance
IC = −1 A; IB = −100 mA; note 1
−
220
mΩ
VBEon
base-emitter turn-on voltage
VCE = −5 V; IC = −1 A
−
−0.82 −0.9
fT
transition frequency
IC = −50 mA; VCE = −10 V;
f = 100 MHz
150
220
−
MHz
Cc
collector capacitance
VCB = −10 V; IE = Ie = 0 A; f = 1 MHz
−
9
15
pF
330
Note
1. Pulse test: tp ≤ 300 µs; δ ≤ 0.02.
MLE124
600
MLE122
−1.2
handbook, halfpage
handbook, halfpage
VBE
hFE
(V)
(1)
(1)
−0.8
400
(2)
(2)
(3)
200
−0.4
(3)
0
−10−1
−1
−10
−102
0
−10−1
−103
−104
IC (mA)
−1
VCE = −5 V.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
VCE = −5 V.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.4
Fig.5
DC current gain as a function of collector
current; typical values.
2004 May 27
5
−10
−102
−103
−104
IC (mA)
Base-emitter voltage as a function of
collector current; typical values.
V
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
MLE126
−10
MLE119
−1
handbook, halfpage
handbook, halfpage
VCEsat
VCEsat
(V)
(V)
−10−1
−1
(2)
−10−1
−10−2
(1)
(3)
(2) (1)
(3)
−10−2
−10−1
−1
−10
−102
−10−3
−10−1
−103
−104
IC (mA)
−1
IC/IB = 20.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
IC/IB = 10.
(1) Tamb = 100 °C.
(2) Tamb = 25 °C.
(3) Tamb = −55 °C.
Fig.6
Fig.7
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLE120
−10
−10
−102
−103
−104
IC (mA)
Collector-emitter saturation voltage as a
function of collector current; typical values.
MLE123
−1.2
handbook, halfpage
handbook, halfpage
VBEsat
VCEsat
(V)
−1
(V)
(1)
−1
(2)
−0.8
(3)
−0.6
−10−1
(1)
−0.4
(2)
−10−2
−10−1
−1
−10
−102
−0.2
−10−1
−103
−104
IC (mA)
−1
Tamb = 25 °C.
(1) IC/IB = 100.
(2) IC/IB = 50.
IC/IB = 20.
(1) Tamb = −55 °C.
(2) Tamb = 25 °C.
(3) Tamb = 100 °C.
Fig.8
Fig.9
Collector-emitter saturation voltage as a
function of collector current; typical values.
2004 May 27
6
−10
−102
−103
−104
IC (mA)
Base-emitter saturation voltage as a
function of collector current; typical values.
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
MLE125
−2
IC
(A)
handbook, halfpage
(6)
(5)
(4)
(3)
(2)
MLE121
103
handbook, halfpage
(1)
RCEsat
(Ω)
−1.6
102
(7)
−1.2
(8)
10
(9)
−0.8
(10)
1
(1)
−0.4
(2)
0
0
−1
−2
−3
(3)
10−1
−10−1
−4
−5
VCE (V)
−1
−10
−102
−103
−104
IC (mA)
Tamb = 25 °C.
(1) IB = −40 mA.
(2) IB = −36 mA.
(3) IB = −32 mA.
(4) IB = −28 mA.
(5) IB = −24 mA.
(6) IB = −20 mA.
(7) IB = −16 mA.
(8) IB = −12 mA.
(9) IB = −8 mA.
(10) IB = −4 mA.
IC/IB = 20.
(1) Tamb = 100 °C.
(3) Tamb = −55 °C.
Fig.11 Equivalent on-resistance as a function of
collector current; typical values.
Fig.10 Collector current as a function of
collector-emitter voltage; typical values.
2004 May 27
(2) Tamb = 25 °C.
7
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
PACKAGE OUTLINE
Plastic surface mounted package; 3 leads
SOT23
D
E
B
A
X
HE
v M A
3
Q
A
A1
1
2
e1
bp
c
w M B
Lp
e
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max.
bp
c
D
E
e
e1
HE
Lp
Q
v
w
mm
1.1
0.9
0.1
0.48
0.38
0.15
0.09
3.0
2.8
1.4
1.2
1.9
0.95
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
OUTLINE
VERSION
SOT23
2004 May 27
REFERENCES
IEC
JEDEC
EIAJ
EUROPEAN
PROJECTION
ISSUE DATE
97-02-28
99-09-13
TO-236AB
8
Philips Semiconductors
Product specification
60 V, 1 A
PNP low VCEsat (BISS) transistor
PBSS5160T
DATA SHEET STATUS
LEVEL
DATA SHEET
STATUS(1)
PRODUCT
STATUS(2)(3)
Development
DEFINITION
I
Objective data
II
Preliminary data Qualification
This data sheet contains data from the preliminary specification.
Supplementary data will be published at a later date. Philips
Semiconductors reserves the right to change the specification without
notice, in order to improve the design and supply the best possible
product.
III
Product data
This data sheet contains data from the product specification. Philips
Semiconductors reserves the right to make changes at any time in order
to improve the design, manufacturing and supply. Relevant changes will
be communicated via a Customer Product/Process Change Notification
(CPCN).
Production
This data sheet contains data from the objective specification for product
development. Philips Semiconductors reserves the right to change the
specification in any manner without notice.
Notes
1. Please consult the most recently issued data sheet before initiating or completing a design.
2. The product status of the device(s) described in this data sheet may have changed since this data sheet was
published. The latest information is available on the Internet at URL http://www.semiconductors.philips.com.
3. For data sheets describing multiple type numbers, the highest-level product status determines the data sheet status.
DEFINITIONS
DISCLAIMERS
Short-form specification  The data in a short-form
specification is extracted from a full data sheet with the
same type number and title. For detailed information see
the relevant data sheet or data handbook.
Life support applications  These products are not
designed for use in life support appliances, devices, or
systems where malfunction of these products can
reasonably be expected to result in personal injury. Philips
Semiconductors customers using or selling these products
for use in such applications do so at their own risk and
agree to fully indemnify Philips Semiconductors for any
damages resulting from such application.
Limiting values definition  Limiting values given are in
accordance with the Absolute Maximum Rating System
(IEC 60134). Stress above one or more of the limiting
values may cause permanent damage to the device.
These are stress ratings only and operation of the device
at these or at any other conditions above those given in the
Characteristics sections of the specification is not implied.
Exposure to limiting values for extended periods may
affect device reliability.
Right to make changes  Philips Semiconductors
reserves the right to make changes in the products including circuits, standard cells, and/or software described or contained herein in order to improve design
and/or performance. When the product is in full production
(status ‘Production’), relevant changes will be
communicated via a Customer Product/Process Change
Notification (CPCN). Philips Semiconductors assumes no
responsibility or liability for the use of any of these
products, conveys no license or title under any patent,
copyright, or mask work right to these products, and
makes no representations or warranties that these
products are free from patent, copyright, or mask work
right infringement, unless otherwise specified.
Application information  Applications that are
described herein for any of these products are for
illustrative purposes only. Philips Semiconductors make
no representation or warranty that such applications will be
suitable for the specified use without further testing or
modification.
2004 May 27
9
Philips Semiconductors – a worldwide company
Contact information
For additional information please visit http://www.semiconductors.philips.com.
Fax: +31 40 27 24825
For sales offices addresses send e-mail to: [email protected].
SCA76
© Koninklijke Philips Electronics N.V. 2004
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Printed in The Netherlands
R75/02/pp10
Date of release: 2004
May 27
Document order number:
9397 750 13284