DISCRETE SEMICONDUCTORS DATA SHEET BUX84; BUX85 Silicon diffused power transistors Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 1997 Aug 13 Philips Semiconductors Product specification Silicon diffused power transistors DESCRIPTION BUX84; BUX85 PINNING High-voltage, high-speed, glass-passivated NPN power transistor in a TO-220AB package. APPLICATIONS PIN DESCRIPTION 1 base 2 collector; connected to mounting base 3 emitter • Converters • Inverters • Switching regulators • Motor control systems 2 • Switching applications. 1 3 MBB008 MBK106 1 2 3 Fig.1 Simplified outline (TO-220AB) and symbol. QUICK REFERENCE DATA SYMBOL VCESM VCEO PARAMETER CONDITIONS collector-emitter peak voltage TYP. MAX. UNIT VBE = 0 BUX84 − 800 V BUX85 − 1000 V BUX84 − 400 V BUX85 − 450 V collector-emitter voltage open base VCEsat collector-emitter saturation voltage IC = 1 A; IB = 200 mA; see Fig.7 − 1 V IC collector current (DC) see Figs 4 and 5 − 2 A ICM collector current (peak value) see Figs 4 and 5 − 3 A Ptot total power dissipation Tmb ≤ 25 °C; see Fig.8 − 40 W tf fall time resistive load; see Fig.11 0.4 − µs THERMAL CHARACTERISTICS SYMBOL PARAMETER VALUE UNIT Rth j-mb thermal resistance from junction to mounting base 2.5 K/W Rth j-a thermal resistance from junction to ambient in free air 70 K/W 1997 Aug 13 2 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL PARAMETER VCESM collector-emitter peak voltage VCEO CONDITIONS MIN. MAX. UNIT VBE = 0 BUX84 − 800 V BUX85 − 1000 V BUX84 − 400 V BUX85 − 450 V − 2 A collector-emitter voltage open base IC collector current (DC) see Figs 4 and 5 ICM collector current (peak value) tp = 2 ms; see Figs 4 and 5 − 3 A IB base current (DC) − 0.75 A IBM base current (peak value) − 1 A IBM base current (reversed; peak value) turn-off current Ptot total power dissipation Tstg Tj − −1 A − 40 W storage temperature −65 +150 °C junction temperature − 150 °C Tmb ≤ 25 °C; see Fig.8 CHARACTERISTICS Tj = 25 °C unless otherwise specified. SYMBOL VCEOsust PARAMETER collector-emitter sustaining voltage BUX84 CONDITIONS IC = 100 mA; IBoff = 0; L = 25 mH; see Figs 2 and 3 collector-emitter saturation voltage TYP. MAX. UNIT 400 − − V 450 − − V − − 0.8 V IC = 1 A; IB = 200 mA; see Fig.7 − − 1 V BUX85 VCEsat MIN. IC = 0.3 A; IB = 30 mA; see Fig.7 VBEsat base-emitter saturation voltage IC = 1 A; IB = 200 mA; see Fig.9 − − 1.1 V ICES collector-emitter cut-off current VCEM = VCEMSmax; VBE = 0; note 1 − − 200 µA VCEM = VCEMSmax; VBE = 0; Tj = 125 °C; note 1 − − 1.5 mA VEB = 5 V; IC = 0 − − 1 mA IEBO emitter-base cut-off current hFE DC current gain fT transition frequency 1997 Aug 13 VCE = 5 V; IC = 5 A; see Fig.10 15 − − VCE = 5 V; IC = 100 mA; see Fig.10 20 50 100 VCE = 10 V; IC = 200 mA; f = 1 MHz − 20 − 3 MHz Philips Semiconductors Product specification Silicon diffused power transistors SYMBOL BUX84; BUX85 PARAMETER CONDITIONS MIN. TYP. MAX. UNIT Switching times in horizontal deflection circuit (see Fig.11) ton turn-on time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.2 0.5 µs tf fall time ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 0.4 − µs ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V; Tmb = 95 °C − − 1.4 µs ICon = 1 A; IBon = 200 mA; IBoff = −400 mA; VCC = 250 V − 2 3.5 µs ts storage time Note 1. Measured with a half-sinewave voltage (curve tracer). andbook, halfpage handbook,IC halfpage + 50 V MGE239 (mA) 100 to 200 Ω 250 L 200 horizontal oscilloscope 100 vertical 6V 30 to 60 Hz Fig.2 1997 Aug 13 300 Ω 1Ω 0 MGE252 Test circuit for collector-emitter sustaining voltage. Fig.3 4 VCE (V) min VCEOsust Oscilloscope display for collector-emitter sustaining voltage. Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUX84; BUX85 MGB940 10 ICM max IC (A) δ = 0.01 tp = 2 µs IC max 5 µs 10 µs (1) 20 µs 1 50 µs 100 µs 200 µs II I 500 µs 10−1 (2) 1 ms 2 ms 5 ms 10 ms DC 10−2 III IV 10−3 10 102 103 VCE (V) 104 BUX84. Tmb ≤ 50 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. Fig.4 Forward bias SOAR. 1997 Aug 13 5 Philips Semiconductors Product specification Silicon diffused power transistors handbook, full pagewidth BUX84; BUX85 MGB939 10 ICM max IC (A) δ = 0.01 tp = 2 µs IC max 5 µs (1) 10 µs 1 20 µs 50 µs 100 µs II I 200 µs 500 µs 10−1 1 ms (2) 2 ms 5 ms 10 ms DC 10−2 III IV 10−3 10 102 103 VCE (V) 104 BUX85. Tmb ≤ 50 °C. I - Region of permissible DC operation. II - Permissible extension for repetitive pulse operation. III - Area of permissible operation during turn-on in single transistor converters, provided RBE ≤ 100 Ω and tp ≤ 0.6 µs. IV - Repetitive pulse operation in this region is permissible provided VBE ≤ 0 and tp ≤ 2 ms. (1) Ptot max and Ptot peak max lines. (2) Second breakdown limits. Fig.5 Forward bias SOAR. 1997 Aug 13 6 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 MGB863 10 handbook, full pagewidth Zth j−mb δ=1 (K/W) 0.75 0.50 1 0.33 0.20 0.10 0.05 10−1 δ= P 0.02 0.01 0 tp T t tp T 10−2 10−3 10−2 10−1 1 10 102 103 tp (ms) Fig.6 Transient thermal impedance. (1) (2) (3) (4) MGB908 4 handbook, full pagewidth VCEsat (V) 3 2 1 0 0 (1) IC = 0.3 A. 0.05 (2) IC = 0.5 A. 0.1 (3) IC = 0.7 A. 0.15 (4) IC = 1 A. 0.2 0.25 IB (A) Tj = 25 °C; solid line: typical values; dotted line: maximum values. Fig.7 Collector-emitter saturation voltage as a function of base current; typical values. 1997 Aug 13 7 0.3 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 MGB904 MGD283 1.0 120 handbook, halfpage handbook, halfpage Ptot max VBEsat (V) (%) (1) (2) (3) 80 0.75 40 0.5 0 0 50 100 Tmb (oC) 150 0 100 200 300 IB (mA) Tj = 25 °C. (1) IC = 1 A. (2) IC = 0.5 A. (3) IC = 0.3 A. Fig.9 Fig.8 Power derating curve. MGB879 102 handbook, halfpage Base-emitter saturation voltage as a function of emitter current; typical values. handbook, halfpage MBB731 tr ≤30 ns IB on 90% IB hFE typ 10% t IB off 10 IC on 90% IC 1 10−2 10% 10−1 1 IC (A) 10 ton t Fig.11 Switching time waveforms with resistive load. Fig.10 DC current gain; typical values. 1997 Aug 13 tf ts 8 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 +25 V handbook, full pagewidth BD139 200 Ω 680 µF T 250 Ω 100 µF 100 Ω VIM D.U.T. tp Vi 100 Ω 30 Ω MGE253 50 Ω BD140 680 µF tp = 20 µs; T = 2 ms; VIM = 15 V. Fig.12 Test circuit resistive load. 1997 Aug 13 VCC 250V 9 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 PACKAGE OUTLINE Plastic single-ended package; heatsink mounted; 1 mounting hole; 3-lead TO-220AB E SOT78 A A1 P q D1 D L1 L2(1) Q b1 L 1 2 3 c b e e 0 5 10 mm scale DIMENSIONS (mm are the original dimensions) (1) UNIT A A1 b b1 c D D1 E e L L1 L2 max. P q Q mm 4.5 4.1 1.39 1.27 0.9 0.7 1.3 1.0 0.7 0.4 15.8 15.2 6.4 5.9 10.3 9.7 2.54 15.0 13.5 3.30 2.79 3.0 3.8 3.6 3.0 2.7 2.6 2.2 Note 1. Terminals in this zone are not tinned. OUTLINE VERSION SOT78 1997 Aug 13 REFERENCES IEC JEDEC EIAJ EUROPEAN PROJECTION ISSUE DATE 97-06-11 TO-220AB 10 Philips Semiconductors Product specification Silicon diffused power transistors BUX84; BUX85 DEFINITIONS Data sheet status Objective specification This data sheet contains target or goal specifications for product development. Preliminary specification This data sheet contains preliminary data; supplementary data may be published later. Product specification This data sheet contains final product specifications. Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. 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