PHILIPS BFG590/X

DISCRETE SEMICONDUCTORS
DATA SHEET
book, halfpage
M3D071
BFG590; BFG590/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of 1995 Sep 19
1998 Oct 02
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
FEATURES
PINNING
• High power gain
DESCRIPTION
PIN
• Low noise figure
BFG590
• High transition frequency
• Gold metallization ensures excellent reliability.
APPLICATIONS
BFG590/X
1
collector
collector
2
base
emitter
3
emitter
base
4
emitter
emitter
• MATV/CATV amplifiers and RF communications
subscriber equipment in the GHz range
• Ideally suitable for use in class-A, (A)B and C amplifiers
with either pulsed or continuous drive.
handbook, 2 columns
4
3
DESCRIPTION
NPN silicon planar epitaxial transistor in a 4-pin
dual-emitter SOT143B plastic package.
1
2
Top view
MARKING
TYPE NUMBER
MSB014
CODE
BFG590
N38
BFG590/X
N44
Fig.1 Simplified outline SOT143B.
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
−
20
V
VCEO
collector-emitter voltage
open base
−
−
15
V
IC
collector current (DC)
−
−
200
mA
Ptot
total power dissipation
Ts ≤ 60 °C
−
−
400
mW
hFE
DC current gain
IC = 35 mA; VCE = 8 V
50
90
280
Cre
feedback capacitance
IC = 0; VCE = 8 V; f = 1 MHz
−
0.7
−
pF
fT
transition frequency
IC = 80 mA; VCE = 4 V; f = 1 GHz
−
5
−
GHz
GUM
maximum unilateral power gain
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
dB
|S21|2
insertion power gain
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
11
−
dB
1998 Oct 02
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage
open emitter
−
20
V
VCEO
collector-emitter voltage
open base
−
15
V
VEBO
emitter-base voltage
open collector
−
3
V
IC
collector current (DC)
−
200
mA
Ptot
total power dissipation
Ts ≤ 60 °C; see Fig.2; note 1
−
400
mW
Tstg
storage temperature
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
thermal resistance from junction to soldering point
Ts ≤ 60 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
MBG249
600
handbook, halfpage
Ptot
(mW)
400
200
0
0
50
100
150
200
Ts ( o C)
Fig.2 Power derating curve.
1998 Oct 02
3
VALUE
UNIT
290
K/W
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
V(BR)CBO
collector-base breakdown voltage
CONDITIONS
IC = 0.1 mA; IE = 0
MIN.
TYP.
MAX.
UNIT
20
−
−
V
V(BR)CEO
collector-emitter breakdown voltage IC = 10 mA; IB = 0
15
−
−
V
V(BR)EBO
emitter-base breakdown voltage
IE = 0.1 mA; IC = 0
3
−
−
V
ICBO
collector-base leakage current
VCB = 10 V; IE = 0
−
−
100
nA
hFE
DC current gain
IC = 70 mA; VCE = 8 V; see Fig.3
60
120
250
fT
transition frequency
IC = 80 mA; VCE = 4 V;
f = 1 GHz; see Fig.5
−
5
−
GHz
Cre
feedback capacitance
IC = 0; VCB = 8 V; f = 1 MHz;
see Fig.4
−
0.7
−
pF
GUM
maximum unilateral power gain;
note 1
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
13
−
dB
IC = 80 mA; VCE = 4 V; f = 2 GHz;
Tamb = 25 °C
−
7.5
−
dB
IC = 80 mA; VCE = 4 V;
f = 900 MHz; Tamb = 25 °C
−
11
−
dB
|S21|2
insertion power gain
Note
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero and G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Oct 02
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
MRA749
250
MLC057
1.2
handbook, halfpage
handbook, halfpage
hFE
C re
(pF)
200
0.8
150
100
0.4
50
0
10−2
10−1
1
10
IC (mA)
0
102
0
VCE = 8 V.
Fig.3
2
4
6
8
10
VCB (V)
IC = 0; f = 1 MHz.
DC current gain as a function of collector
current; typical values.
Fig.4
MLC058
8
handbook, halfpage
fT
(GHz)
6
4
2
0
10
I C (mA)
102
VCE = 4 V; f = 1 GHz.
Fig.5
1998 Oct 02
Transition frequency as a function of
collector current; typical values.
5
Feedback capacitance as a function of
collector-base voltage; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
MLC059
30
MLC060
12
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
20
G max
8
G UM
G max
G UM
10
4
0
0
0
20
40
100
80
I C (mA)
60
0
f = 900 MHz; VCE = 4 V.
Fig.6
Gain as a function of collector current;
typical values.
Fig.7
MLC061
50
100
80
I C (mA)
60
Gain as a function of collector current;
typical values.
MLC062
50
handbook, halfpage
gain
gain
(dB)
G UM
40
40
f = 2 GHz; VCE = 4 V.
handbook, halfpage
(dB)
20
40
G UM
MSG
MSG
30
30
20
20
10
10
G max
0
G max
0
102
10
103
f (MHz)
104
IC = 20 mA; VCE = 4 V.
Fig.8
1998 Oct 02
102
10
103
f (MHz)
104
IC = 80 mA; VCE = 4 V.
Gain as a function of frequency;
typical values.
Fig.9
6
Gain as a function of frequency;
typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
3 GHz
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
5
0.2
40 MHz
0.5
2
135 o
45 o
1
MGC882
1.0
90 o
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.10 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
40 MHz
180 o
3 GHz
50
40
30
20
0o
10
135 o
45 o
90 o
MGC805
IC = 80 mA; VCE = 4 V.
Fig.11 Common emitter forward transmission coefficient (S21); typical values.
1998 Oct 02
7
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
90 o
handbook, full pagewidth
3 GHz
135 o
45 o
40 MHz
180 o
0.25
0.20
0.15
0.10
0o
0.05
135 o
45 o
90 o
MGC803
IC = 80 mA; VCE = 4 V.
Fig.12 Common emitter reverse transmission coefficient (S12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
3 GHz
0.2
40 MHz
0.5
2
135 o
5
45 o
1
MGC804
1.0
90 o
IC = 80 mA; VCE = 4 V; Zo = 50 Ω.
Fig.13 Common emitter output reflection coefficient (S22); typical values.
1998 Oct 02
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
PACKAGE OUTLINE
Plastic surface mounted package; 4 leads
SOT143B
D
B
E
A
X
y
HE
v M A
e
bp
w M B
4
3
Q
A
A1
c
1
2
Lp
b1
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.9
0.1
0.48
0.38
0.88
0.78
0.15
0.09
3.0
2.8
1.4
1.2
1.9
1.7
2.5
2.1
0.45
0.15
0.55
0.45
0.2
0.1
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-02-28
SOT143B
1998 Oct 02
EUROPEAN
PROJECTION
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Oct 02
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG590; BFG590/X
NOTES
1998 Oct 02
11
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© Philips Electronics N.V. 1998
SCA60
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Printed in The Netherlands
125104/00/03/pp12
Date of release: 1998 Oct 02
Document order number:
9397 750 04346