PHILIPS BFG25AW

DATA SHEET
book, halfpage
M3D123
BFG25AW; BFG25AW/X
NPN 5 GHz wideband transistors
Product specification
Supersedes data of August 1995
1998 Sep 23
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
FEATURES
BFG25AW; BFG25AW/X
PINNING
• Low current consumption
(100 µA to 1 mA)
• Low noise figure
• Gold metallization ensures
excellent reliability.
APPLICATIONS
Wideband applications in UHF low
power amplifiers, such as pocket
telephones and paging systems.
DESCRIPTION
PIN
DESCRIPTION
fpage
4
3
1
2
BFG25AW
1
collector
2
base
3
emitter
4
emitter
Top view
BFG25AW/X
MBK523
Fig.1 SOT343N.
1
collector
2
emitter
3
base
4
emitter
MARKING
TYPE NUMBER
NPN silicon planar epitaxial transistor
in a 4-pin dual-emitter SOT343N
plastic package.
CODE
BFG25AW
N6
BFG25AW/X
V1
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX. UNIT
VCBO
collector-base voltage
open emitter
−
−
8
V
VCEO
collector-emitter voltage
open base
−
−
5
V
IC
collector current (DC)
−
−
6.5
mA
Ptot
total power dissipation
−
−
500
mW
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
Cre
feedback capacitance
IC = 0; VCE = 1 V; f = 1 MHz
−
0.2
0.3
pF
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 500 MHz; Tamb = 25 °C 3.5
5
−
GHz
GUM
maximum unilateral
power gain
IC = 0.5 mA; VCE = 1 V; f = 1 GHz; Tamb = 25 °C
−
16
−
dB
F
noise figure
Γs = Γopt; IC = 1 mA; VCE = 1 V; f = 1 GHz
−
2
−
dB
Ts ≤ 85 °C
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
open emitter
−
8
V
collector-emitter voltage
open base
−
5
V
emitter-base voltage
open collector
−
2
V
−
6.5
mA
VCBO
collector-base voltage
VCEO
VEBO
IC
collector current (DC)
Ptot
total power dissipation
−
500
mW
Tstg
storage temperature
Ts ≤ 85 °C; see Fig.2; note 1
−65
+150
°C
Tj
junction temperature
−
175
°C
Note
1. Ts is the temperature at the soldering point of the collector pin.
1998 Sep 23
2
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
THERMAL CHARACTERISTICS
SYMBOL
Rth j-s
PARAMETER
CONDITIONS
VALUE
UNIT
180
K/W
thermal resistance from junction to soldering point Ts ≤ 85 °C; note 1
Note
1. Ts is the temperature at the soldering point of the collector pin.
CHARACTERISTICS
Tj = 25 °C unless otherwise specified.
SYMBOL
PARAMETER
CONDITIONS
IC = 100 µA; IE = 0
V(BR)CBO
collector-base breakdown voltage
V(BR)CEO
collector-emitter breakdown voltage IC = 1 mA; IB = 0
MIN.
TYP.
MAX.
UNIT
−
−
8
V
−
−
5
V
V(BR)EBO
emitter-base breakdown voltage
IE = 100 µA; IC = 0
−
−
2
V
ICBO
collector leakage current
open emitter; VCB = 5 V; IE = 0
−
−
50
nA
hFE
DC current gain
IC = 0.5 mA; VCE = 1 V
50
80
200
Cre
feedback capacitance
IC = 0; VCE = 1 V; f = 1 MHz
−
0.2
0.3
pF
fT
transition frequency
IC = 1 mA; VCE = 1 V; f = 1 GHz;
Tamb = 25 °C
3.5
5
−
GHz
GUM
maximum unilateral power gain;
note 1
IC = 0.5 mA; VCE = 1 V;
f = 1 GHz; Tamb = 25 °C
−
16
−
dB
IC = 0.5 mA; VCE = 1 V;
f = 2 GHz; Tamb = 25 °C
−
8
−
dB
Γs = Γopt; IC = 0.5 mA; VCE = 1 V;
f = 1 GHz
−
1.9
−
dB
Γs = Γopt; IC = 1 mA; VCE = 1 V;
f = 1 GHz
−
2
F
noise figure
Note
dB
S 21 2
dB.
1. GUM is the maximum unilateral power gain, assuming S12 is zero. G UM = 10 log -------------------------------------------------------------( 1 – S 11 2 ) ( 1 – S 22 2 )
1998 Sep 23
3
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MBG248
600
MCD138
100
handbook, halfpage
handbook, halfpage
h FE
P tot
80
(mW)
400
60
40
200
20
0
0
50
100
150
o
0
10 3
200
T s ( C)
10 2
10 1
1
I C (mA)
10
VCE = 1 V.
Fig.3
DC current gain as a function of collector
current; typical values.
Fig.2 Power derating curve.
MLB971
0.3
MLB972
6
handbook, halfpage
handbook, halfpage
Cre
fT
(GHz)
(pF)
0.2
4
0.1
2
0
0
0
2
4
VCE (V)
6
0
1998 Sep 23
2
3 I (mA) 4
C
f = 500 MHz; VCE = 1 V; Tamb = 25 °C.
IC = 0; f = 1 MHz.
Fig.4
1
Feedback capacitance as a function of
collector-base voltage; typical values.
Fig.5
4
Transition frequency as a function of
collector current; typical values.
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MLB973
30
MLB974
30
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
G UM
20
20
MSG
G UM
MSG
10
10
0
0
0
1
2
0
3
1
2
3
I C (mA)
I C (mA)
f = 500 MHz; VCE = 1 V.
Fig.6
f = 1 GHz; VCE = 1 V.
Gain as a function of collector current;
typical values.
Fig.7
MLB975
50
Gain as a function of collector current;
typical values.
MLB976
50
handbook, halfpage
handbook, halfpage
gain
gain
(dB)
(dB)
40
40
G UM
30
G UM
30
MSG
MSG
20
20
10
10
0
0
10
10
2
10
3
f (MHz)
10
4
10
IC = 0.5 mA; VCE = 1 V.
Fig.8
1998 Sep 23
10
2
10
3
f (MHz)
10
IC = 1 mA; VCE = 1 V.
Gain as a function of frequency;
typical values.
Fig.9
5
Gain as a function of frequency;
typical values.
4
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
MCD145
4
MCD146
4
handbook, halfpage
handbook, halfpage
F
(dB)
F
(dB)
f = 2 GHz
3
IC = 2 mA
3
1 GHz
1 mA
500 MHz
2
2
1
1
0
10−1
1
IC (mA)
0.5 mA
0
102
10
VCE = 1 V.
103
104
VCE = 1 V.
Fig.10 Minimum noise figure as a function
of collector current; typical values.
Fig.11 Minimum noise figure as a function of
frequency; typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
F min = 1.9 dB
180 o
0.2
0
0.5
1
2
5
Γ opt
0o
0
F = 3 dB
F = 4 dB
F = 5 dB
0.2
0.5
5
2
135 o
45 o
1
MLB977
90 o
f = 500 MHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.12 Common emitter noise figure circles; typical values.
1998 Sep 23
f (MHz)
6
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
stability
circle
0.2
0.4
5
F min = 2.0 dB
180 o
0.2
0
0.5
1
2
5
0.6
0.2
Γ opt
0o
F = 3 dB
0
F = 4 dB
F = 5 dB
5
0.2
0.5
2
135 o
45 o
1
MLB978
1.0
90 o
f = 1 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.13 Common emitter noise figure circles; typical values.
90 o
handbook, full pagewidth
1
135 o
stability
circle
1.0
45 o
0.8
2
F = 5 dB
F = 4 dB
F = 3 dB
Γ opt
0.5
0.6
F min = 2.4 dB
0.2
0.4
5
unstable
region
180 o
0.2
0.2
0
0.5
1
2
5
0o
0
5
0.2
0.5
2
135 o
45 o
1
MLB979
90 o
f = 2 GHz; VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.14 Common emitter noise figure circles; typical values.
1998 Sep 23
7
1.0
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
3 GHz
0.2
5
0.5
2
135 o
45 o
1
MLB980
1.0
90 o
VCE = 1 V; IC = 1 mA; Zo = 50 Ω..
Fig.15 Common emitter input reflection coefficient (S11); typical values.
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
40 MHz
5
4
3
2
0o
1
135 o
45 o
90 o
MLB981
VCE = 1 V; IC = 1 mA.
Fig.16 Common emitter forward transmission coefficient (S21); typical values.
1998 Sep 23
8
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
90 o
handbook, full pagewidth
135 o
45 o
3 GHz
180 o
0.5
0.4
0.3
0.2
0.1
40 MHz
0o
135 o
45 o
90 o
MLB982
VCE = 1 V; IC = 1 mA.
Fig.17 Common emitter reverse transmission coefficient (S12); typical values.
90 o
1.0
handbook, full pagewidth
1
135 o
45 o
2
0.5
0.8
0.6
0.2
0.4
5
0.2
180 o
0.2
0
0.5
1
2
5
0o
0
40 MHz
5
0.2
3 GHz
0.5
2
135 o
45 o
1
MLB983
1.0
90 o
VCE = 1 V; IC = 1 mA; Zo = 50 Ω.
Fig.18 Common emitter output reflection coefficient (S22); typical values.
1998 Sep 23
9
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
SPICE parameters for the BFG25W crystal
SEQUENCE No.
PARAMETER
VALUE
SEQUENCE No.
UNIT
PARAMETER
VALUE
UNIT
1
IS
13.77
aA
36(1)
VJS
750.0
mV
2
BF
85.65
−
37(1)
MJS
0.000
−
3
NF
0.980
−
38
FC
0.988
−
4
VAF
50.80
V
Note
5
IKF
10.00
A
6
ISE
2.199
fA
1. These parameters have not been extracted, the
default values are shown.
7
NE
1.857
−
8
BR
16.97
−
9
NR
0.986
−
10
VAR
2.491
V
11
IKR
188.0
mA
12
ISC
205.1
aA
13
NC
1.107
−
14
RB
80.00
Ω
15
IRB
1.000
µA
16
RBM
80.00
Ω
17
RE
7.911
Ω
18
RC
5.300
Ω
19(1)
XTB
0.000
−
20(1)
EG
1.110
eV
21(1)
XTI
3.000
−
22
CJE
223.0
fF
23
VJE
669.7
mV
24
MJE
0.060
−
25
TF
5.112
ps
26
XTF
7.909
−
27
VTF
1.338
V
28
ITF
5.662
mA
Cbe
70
29
PTF
15.37
deg
Ccb
50
fF
115
fF
C cb
handbook, halfpage
L1
LB
B
L2
B'
C be
C'
E'
C
Cce
LE
MBC964
L3
E
QLB = 50; QLE = 50; QLB,E(f) = QLB,E√(f/fc);
fc = scaling frequency = 1 GHz.
Fig.19 Package equivalent circuit SOT343N.
List of components (see Fig.19)
DESIGNATION
VALUE
UNIT
fF
30
CJC
229.0
fF
Cce
31
VJC
394.7
mV
L1
0.34
nH
32
MJC
0.043
−
L2
0.10
nH
XCJC
0.050
−
L3
0.25
nH
TR
13.26
ns
LB
0.40
nH
CJS
0.000
F
LE
0.40
nH
33
34
35
(1)
1998 Sep 23
10
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
PACKAGE OUTLINES
Plastic surface mounted package; 4 leads
SOT343N
D
E
B
A
X
HE
y
v M A
e
4
3
Q
A
A1
c
1
2
b1
bp
w M B
Lp
e1
detail X
0
1
2 mm
scale
DIMENSIONS (mm are the original dimensions)
UNIT
A
A1
max
bp
b1
c
D
E
e
e1
HE
Lp
Q
v
w
y
mm
1.1
0.8
0.1
0.4
0.3
0.7
0.5
0.25
0.10
2.2
1.8
1.35
1.15
1.3
1.15
2.2
2.0
0.45
0.15
0.23
0.13
0.2
0.2
0.1
OUTLINE
VERSION
REFERENCES
IEC
JEDEC
EIAJ
ISSUE DATE
97-05-21
SOT343N
1998 Sep 23
EUROPEAN
PROJECTION
11
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
DEFINITIONS
Data Sheet Status
Objective specification
This data sheet contains target or goal specifications for product development.
Preliminary specification
This data sheet contains preliminary data; supplementary data may be published later.
Product specification
This data sheet contains final product specifications.
Limiting values
Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or
more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation
of the device at these or at any other conditions above those given in the Characteristics sections of the specification
is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices, or systems where malfunction of these
products can reasonably be expected to result in personal injury. Philips customers using or selling these products for
use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such
improper use or sale.
1998 Sep 23
12
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
NOTES
1998 Sep 23
13
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
NOTES
1998 Sep 23
14
Philips Semiconductors
Product specification
NPN 5 GHz wideband transistors
BFG25AW; BFG25AW/X
NOTES
1998 Sep 23
15
Philips Semiconductors – a worldwide company
Argentina: see South America
Australia: 34 Waterloo Road, NORTH RYDE, NSW 2113,
Tel. +61 2 9805 4455, Fax. +61 2 9805 4466
Austria: Computerstr. 6, A-1101 WIEN, P.O. Box 213, Tel. +43 160 1010,
Fax. +43 160 101 1210
Belarus: Hotel Minsk Business Center, Bld. 3, r. 1211, Volodarski Str. 6,
220050 MINSK, Tel. +375 172 200 733, Fax. +375 172 200 773
Belgium: see The Netherlands
Brazil: see South America
Bulgaria: Philips Bulgaria Ltd., Energoproject, 15th floor,
51 James Bourchier Blvd., 1407 SOFIA,
Tel. +359 2 689 211, Fax. +359 2 689 102
Canada: PHILIPS SEMICONDUCTORS/COMPONENTS,
Tel. +1 800 234 7381
China/Hong Kong: 501 Hong Kong Industrial Technology Centre,
72 Tat Chee Avenue, Kowloon Tong, HONG KONG,
Tel. +852 2319 7888, Fax. +852 2319 7700
Colombia: see South America
Czech Republic: see Austria
Denmark: Prags Boulevard 80, PB 1919, DK-2300 COPENHAGEN S,
Tel. +45 32 88 2636, Fax. +45 31 57 0044
Finland: Sinikalliontie 3, FIN-02630 ESPOO,
Tel. +358 9 615800, Fax. +358 9 61580920
France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,
Tel. +33 1 40 99 6161, Fax. +33 1 40 99 6427
Germany: Hammerbrookstraße 69, D-20097 HAMBURG,
Tel. +49 40 23 53 60, Fax. +49 40 23 536 300
Greece: No. 15, 25th March Street, GR 17778 TAVROS/ATHENS,
Tel. +30 1 4894 339/239, Fax. +30 1 4814 240
Hungary: see Austria
India: Philips INDIA Ltd, Band Box Building, 2nd floor,
254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,
Tel. +91 22 493 8541, Fax. +91 22 493 0966
Indonesia: PT Philips Development Corporation, Semiconductors Division,
Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,
Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080
Ireland: Newstead, Clonskeagh, DUBLIN 14,
Tel. +353 1 7640 000, Fax. +353 1 7640 200
Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,
TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007
Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,
20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557
Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,
TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077
Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,
Tel. +82 2 709 1412, Fax. +82 2 709 1415
Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,
Tel. +60 3 750 5214, Fax. +60 3 757 4880
Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,
Tel. +9-5 800 234 7381
Middle East: see Italy
Netherlands: Postbus 90050, 5600 PB EINDHOVEN, Bldg. VB,
Tel. +31 40 27 82785, Fax. +31 40 27 88399
New Zealand: 2 Wagener Place, C.P.O. Box 1041, AUCKLAND,
Tel. +64 9 849 4160, Fax. +64 9 849 7811
Norway: Box 1, Manglerud 0612, OSLO,
Tel. +47 22 74 8000, Fax. +47 22 74 8341
Pakistan: see Singapore
Philippines: Philips Semiconductors Philippines Inc.,
106 Valero St. Salcedo Village, P.O. Box 2108 MCC, MAKATI,
Metro MANILA, Tel. +63 2 816 6380, Fax. +63 2 817 3474
Poland: Ul. Lukiska 10, PL 04-123 WARSZAWA,
Tel. +48 22 612 2831, Fax. +48 22 612 2327
Portugal: see Spain
Romania: see Italy
Russia: Philips Russia, Ul. Usatcheva 35A, 119048 MOSCOW,
Tel. +7 095 755 6918, Fax. +7 095 755 6919
Singapore: Lorong 1, Toa Payoh, SINGAPORE 319762,
Tel. +65 350 2538, Fax. +65 251 6500
Slovakia: see Austria
Slovenia: see Italy
South Africa: S.A. PHILIPS Pty Ltd., 195-215 Main Road Martindale,
2092 JOHANNESBURG, P.O. Box 7430 Johannesburg 2000,
Tel. +27 11 470 5911, Fax. +27 11 470 5494
South America: Al. Vicente Pinzon, 173, 6th floor,
04547-130 SÃO PAULO, SP, Brazil,
Tel. +55 11 821 2333, Fax. +55 11 821 2382
Spain: Balmes 22, 08007 BARCELONA,
Tel. +34 93 301 6312, Fax. +34 93 301 4107
Sweden: Kottbygatan 7, Akalla, S-16485 STOCKHOLM,
Tel. +46 8 5985 2000, Fax. +46 8 5985 2745
Switzerland: Allmendstrasse 140, CH-8027 ZÜRICH,
Tel. +41 1 488 2741 Fax. +41 1 488 3263
Taiwan: Philips Semiconductors, 6F, No. 96, Chien Kuo N. Rd., Sec. 1,
TAIPEI, Taiwan Tel. +886 2 2134 2865, Fax. +886 2 2134 2874
Thailand: PHILIPS ELECTRONICS (THAILAND) Ltd.,
209/2 Sanpavuth-Bangna Road Prakanong, BANGKOK 10260,
Tel. +66 2 745 4090, Fax. +66 2 398 0793
Turkey: Talatpasa Cad. No. 5, 80640 GÜLTEPE/ISTANBUL,
Tel. +90 212 279 2770, Fax. +90 212 282 6707
Ukraine: PHILIPS UKRAINE, 4 Patrice Lumumba str., Building B, Floor 7,
252042 KIEV, Tel. +380 44 264 2776, Fax. +380 44 268 0461
United Kingdom: Philips Semiconductors Ltd., 276 Bath Road, Hayes,
MIDDLESEX UB3 5BX, Tel. +44 181 730 5000, Fax. +44 181 754 8421
United States: 811 East Arques Avenue, SUNNYVALE, CA 94088-3409,
Tel. +1 800 234 7381
Uruguay: see South America
Vietnam: see Singapore
Yugoslavia: PHILIPS, Trg N. Pasica 5/v, 11000 BEOGRAD,
Tel. +381 11 625 344, Fax.+381 11 635 777
For all other countries apply to: Philips Semiconductors,
International Marketing & Sales Communications, Building BE-p, P.O. Box 218,
5600 MD EINDHOVEN, The Netherlands, Fax. +31 40 27 24825
Internet: http://www.semiconductors.philips.com
© Philips Electronics N.V. 1998
SCA60
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.
The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed
without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license
under patent- or other industrial or intellectual property rights.
Printed in The Netherlands
125104/00/03/pp16
Date of release: 1998 Sep 23
Document order number:
9397 750 04352